Abstract: The aim of the present study was to develop a rapid method for electronic nose for online quality control of oat milk. Analysis by electronic nose and bacteriological measurements were performed to analyze spoilage kinetics of oat milk samples stored at room temperature and refrigerated conditions for up to 15 days. Principal component analysis (PCA), Discriminant Factorial Analysis (DFA) and Soft Independent Modelling by Class Analogy (SIMCA) classification techniques were used to differentiate the samples of oat milk at different days. The total plate count (bacteriological method) was selected as the reference method to consistently train the electronic nose system. The e-nose was able to differentiate between the oat milk samples of varying microbial load. The results obtained by the bacteria total viable countsshowed that the shelf-life of oat milk stored at room temperature and refrigerated conditions were 20hrs and 13 days, respectively. The models built classified oat milk samples based on the total microbial population into “unspoiled” and “spoiled”.
Abstract: The yield management system is very important to produce high-quality semiconductor chips in the semiconductor manufacturing process. In order to improve quality of semiconductors, various tests are conducted in the post fabrication (FAB) process. During the test process, large amount of data are collected and the data includes a lot of information about defect. In general, the defect on the wafer is the main causes of yield loss. Therefore, analyzing the defect data is necessary to improve performance of yield prediction. The wafer bin map (WBM) is one of the data collected in the test process and includes defect information such as the fail bit patterns. The fail bit has characteristics of spatial point patterns. Therefore, this paper proposes the feature extraction method using the spatial point pattern analysis. Actual data obtained from the semiconductor process is used for experiments and the experimental result shows that the proposed method is more accurately recognize the fail bit patterns.
Abstract: Depending on the big data analysis becomes important, yield prediction using data from the semiconductor process is essential. In general, yield prediction and analysis of the causes of the failure are closely related. The purpose of this study is to analyze pattern affects the final test results using a die map based clustering. Many researches have been conducted using die data from the semiconductor test process. However, analysis has limitation as the test data is less directly related to the final test results. Therefore, this study proposes a framework for analysis through clustering using more detailed data than existing die data. This study consists of three phases. In the first phase, die map is created through fail bit data in each sub-area of die. In the second phase, clustering using map data is performed. And the third stage is to find patterns that affect final test result. Finally, the proposed three steps are applied to actual industrial data and experimental results showed the potential field application.
Abstract: The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.
Abstract: A laser is essentially an optical oscillator consisting of a resonant cavity, an amplifying medium and a pumping source. In semiconductor diode lasers, the cavity is created by the boundary between the cleaved face of the semiconductor crystal and air, and has reflective properties as a result of the differing refractive indices of the two media. For a GaAs-air interface a reflectance of 0.3 is typical and therefore the length of the semiconductor junction forms the resonant cavity. To prevent light being emitted in unwanted directions from the junction, sides perpendicular to the required direction are roughened. The objective of this work is to simulate the optical resonator Fabry-Perot and explore its main characteristics, such as FSR, finesse, linewidth, transmission and so on, that describe the performance of resonator.
Abstract: In this paper the relationships between professional competences and school curriculain IC design industry are explored. The semi-structured questionnaire survey and focus group interview is the research method. Study participants are graduates of microelectronics engineering professional departments who are currently employed in the IC industry. The IC industries are defined as the electronic component manufacturing industry and optical-electronic component manufacturing industry in the semiconductor industry and optical-electronic material devices, respectively. Study participants selected from IC design industry include IC engineering and electronic & semiconductor engineering. The human training with IC design professional competence in microelectronics engineering professional departments is explored in this research. IC professional competences of human resources in the IC design industry include general intelligence and professional intelligence.
Abstract: Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390nm chopped light. Finally, the sensitivity and quantum efficiency were also studied.
Abstract: In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.
Abstract: This paper presents a new compact analytical model of
the gate leakage current in high-k based nano scale MOSFET by
assuming a two-step inelastic trap-assisted tunneling (ITAT) process
as the conduction mechanism. This model is based on an inelastic
trap-assisted tunneling (ITAT) mechanism combined with a semiempirical
gate leakage current formulation in the BSIM 4 model. The
gate tunneling currents have been calculated as a function of gate
voltage for different gate dielectrics structures such as HfO2, Al2O3
and Si3N4 with EOT (equivalent oxide thickness) of 1.0 nm. The
proposed model is compared and contrasted with santaurus
simulation results to verify the accuracy of the model and excellent
agreement is found between the analytical and simulated data. It is
observed that proposed analytical model is suitable for different highk
gate dielectrics simply by adjusting two fitting parameters. It was
also shown that gate leakages reduced with the introduction of high-k
gate dielectric in place of SiO2.
Abstract: The current-voltage characteristics of a PtSi/p-Si
Schottky barrier diode was measured at the temperature of 85 K and
from the forward bias region of the I-V curve, the electrical
parameters of the diode were measured by three methods. The results
obtained from the two methods which considered the series resistance
were in close agreement with each other and from them barrier height
(), ideality factor (n) and series resistance () were found to be
0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V
characteristics in the temperature range of 85-136 K the electrical
parameters were observed to have strong dependency on temperature.
The increase of barrier height and decrease of ideality factor with
increasing temperature is attributed to the existence of barrier height
inhomogeneities in the silicide-semiconductor structure.
Abstract: In this work, the influence of temperature on the
different parameters of solar cells based on organic semiconductors
are studied. The short circuit current Isc increases so monotonous
with temperature and then saturates to a maximum value before
decreasing at high temperatures. The open circuit voltage Vco
decreases linearly with temperature. The fill factor FF and efficiency,
which are directly related with Isc and Vco follow the variations of
the letters. The phenomena are explained by the behaviour of the
mobility which is a temperature activated process.
Abstract: We evaluate the average energy consumption per bit
in Optical Packet Switches equipped with BENES switching fabric
realized in Semiconductor Optical Amplifier (SOA) technology. We
also study the impact that the Amplifier Spontaneous Emission
(ASE) noise generated by a transmission system has on the power
consumption of the BENES switches due to the gain saturation of the
SOAs used to realize the switching fabric. As a matter of example for
32×32 switches supporting 64 wavelengths and offered traffic equal
to 0,8, the average energy consumption per bit is 2, 34 · 10-1 nJ/bit
and increases if ASE noise introduced by the transmission systems
is increased.
Abstract: This paper describes the design of new method of
propagation delay measurement in micro and nanostructures during
characterization of ASIC standard library cell. Providing more
accuracy timing information about library cell to the design team we
can improve a quality of timing analysis inside of ASIC design flow
process. Also, this information could be very useful for semiconductor
foundry team to make correction in technology process. By
comparison of the propagation delay in the CMOS element and result
of analog SPICE simulation. It was implemented as digital IP core for
semiconductor manufacturing process. Specialized method helps to
observe the propagation time delay in one element of the standard-cell
library with up-to picoseconds accuracy and less. Thus, the special
useful solutions for VLSI schematic to parameters extraction, basic
cell layout verification, design simulation and verification are
announced.
Abstract: The ionization energy in semiconductor
systems in nano scale was investigated by using effective mass
approximation. By introducing the Hamiltonian of the system, the
variational technique was employed to calculate the ground state and
the ionization energy of a donor at the center and in the case that the
impurities are randomly distributed inside a cubic quantum well. The
numerical results for GaAs/GaAlAs show that the ionization energy
strongly depends on the well width for both cases and it decreases as
the well width increases. The ionization energy of a quantum wire
was also calculated and compared with the results for the well.
Abstract: In this study we present the effect of elevated
temperatures from 300K to 400K on the electrical properties of
copper Phthalocyanine (CuPc) based organic field effect transistors
(OFET). Thin films of organic semiconductor CuPc (40nm) and
semitransparent Al (20nm) were deposited in sequence, by vacuum
evaporation on a glass substrate with previously deposited Ag source
and drain electrodes with a gap of 40 μm. Under resistive mode of
operation, where gate was suspended it was observed that drain
current of this organic field effect transistor (OFET) show an
increase with temperature. While in grounded gate condition metal
(aluminum) – semiconductor (Copper Phthalocyanine) Schottky
junction dominated the output characteristics and device showed
switching effect from low to high conduction states like Zener diode
at higher bias voltages. This threshold voltage for switching effect
has been found to be inversely proportional to temperature and shows
an abrupt decrease after knee temperature of 360K. Change in
dynamic resistance (Rd = dV/dI) with respect to temperature was
observed to be -1%/K.
Abstract: In this paper we have numerically analyzed terahertzrange
wavelength conversion using nondegenerate four wave mixing
(NDFWM) in a SOA integrated DFB laser (experiments reported
both in MIT electronics and Fujitsu research laboratories). For
analyzing semiconductor optical amplifier (SOA), we use finitedifference
beam propagation method (FDBPM) based on modified
nonlinear SchrÖdinger equation and for distributed feedback (DFB)
laser we use coupled wave approach. We investigated wavelength
conversion up to 4THz probe-pump detuning with conversion
efficiency -5dB in 1THz probe-pump detuning for a SOA integrated
quantum-well
Abstract: The design of Class A and Class AB 2-stage X band
Power Amplifier is described in this report. This power amplifier is
part of a transceiver used in radar for monitoring iron characteristics
in a blast furnace. The circuit was designed using foundry WIN
Semiconductors. The specification requires 15dB gain in the linear
region, VSWR nearly 1 at input as well as at the output, an output
power of 10 dBm and good stable performance in the band 10.9-12.2
GHz. The design was implemented by using inter-stage
configuration, the Class A amplifier was chosen for driver stage i.e.
the first amplifier focusing on the gain and the output amplifier
conducted at Class AB with more emphasis on output power.
Abstract: Photo-BJMOSFET (Bipolar Junction Metal-Oxide-
Semiconductor Field Effect Transistor) fabricated on SOI film was proposed. ITO film is adopted in the device as gate electrode to reduce
light absorption. Depletion region but not inversion region is formed
in film by applying gate voltage (but low reverse voltage) to achieve
high photo-to-dark-current ratio. Comparisons of photoelectriccharacteristics
executed among VGK=0V, 0.3V, 0.6V, 0.9V and 1.0V
(reverse voltage VAK is equal to 1.0V for total area of 10×10μm2). The
results indicate that the greatest improvement in photo-to-dark-current
ratio is achieved up to 2.38 at VGK=0.6V. In addition,
photo-BJMOSFET is compatible with CMOS integration due to big
input resistance
Abstract: A compact tunable 10 W picosecond source based on
Yb-doped fiber amplification of gain switch laser diode has been
demonstrated. A gain switch semiconductor laser diode was used as
the seed source, and a multi-stage single mode Yb-doped fiber
preamplifier was combined with two large mode area double-clad
Yb-doped fiber main amplifiers to construct the amplification system.
The tunable pulses with high stability and excellent beam quality
(M2
Abstract: to simulate the phenomenon of electronic transport in semiconductors, we try to adapt a numerical method, often and most frequently it’s that of Monte Carlo. In our work, we applied this method in the case of a ternary alloy semiconductor GaInP in its cubic form; The Calculations are made using a non-parabolic effective-mass energy band model. We consider a band of conduction to three valleys (ΓLX), major of the scattering mechanisms are taken into account in this modeling, as the interactions with the acoustic phonons (elastic collisions) and optics (inelastic collisions). The polar optical phonons cause anisotropic collisions, intra-valleys, very probable in the III-V semiconductors. Other optical phonons, no polar, allow transitions inter-valleys. Initially, we present the full results obtained by the simulation of Monte Carlo in GaInP in stationary regime. We consider thereafter the effects related to the application of an electric field varying according to time, we thus study the transient phenomenon which make their appearance in ternary material