Abstract: Analytical formula for the optical gain based on a
simple parabolic-band by introducing theoretical expressions for the
quantized energy is presented. The model used in this treatment take
into account the effects of intraband relaxation. It is shown, as a
result, that the gain for the TE mode is larger than that for TM mode
and the presence of acceptor impurity increase the peak gain.
Abstract: We have studied a method to widen the spectrum
of optical pulses that pass through an InGaAsP waveguide for
application to broadband optical communication. In particular, we
have investigated the competitive effect between spectral broadening
arising from nonlinear refraction (optical Kerr effect) and shrinking
due to two photon absorption in the InGaAsP waveguide with
χ(3) nonlinearity. The shrunk spectrum recovers broadening by
the enhancement effect of the nonlinear refractive index near the
bandgap of InGaAsP with a bandgap wavelength of 1490 nm. The
broadened spectral width at around 1525 nm (196.7 THz) becomes
10.7 times wider than that at around 1560 nm (192.3 THz) without
the enhancement effect, where amplified optical pulses with a pulse
width of ∼ 2 ps and a peak power of 10 W propagate through a
1-cm-long InGaAsP waveguide with a cross-section of 4 (μm)2.
Abstract: In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.
Abstract: InGaAsN and GaAsN epitaxial layers with similar
nitrogen compositions in a sample were successfully grown on a
GaAs (001) substrate by solid source molecular beam epitaxy. An
electron cyclotron resonance nitrogen plasma source has been used to
generate atomic nitrogen during the growth of the nitride layers. The
indium composition changed from sample to sample to give
compressive and tensile strained InGaAsN layers. Layer
characteristics have been assessed by high-resolution x-ray
diffraction to determine the relationship between the lattice constant
of the GaAs1-yNy layer and the fraction x of In. The objective was to
determine the In fraction x in an InxGa1-xAs1-yNy epitaxial layer which
exactly cancels the strain present in a GaAs1-yNy epitaxial layer with
the same nitrogen content when grown on a GaAs substrate.
Abstract: A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.
Abstract: In the present work we model a Multiquantum Well
structure Separate Absorption and Charge Multiplication Avalanche
Photodiode (MQW-SACM-APD), while the Absorption region
coincide with the MQW. We consider the nonuniformity of electric
field using split-step method in active region. This model is based on
the carrier rate equations in the different regions of the device. Using
the model we obtain the photocurrent, and dark current. As an
example, InGaAs/InP SACM-APD and MQW-SACM-APD are
simulated. There is a good agreement between the simulation and
experimental results.
Abstract: This paper reports on the theoretical performance
analysis of the 1.3 μm In0.42Ga0.58As /In0.26Ga0.74As multiple quantum
well (MQW) vertical cavity surface emitting laser (VCSEL) on the
ternary In0.31Ga0.69As substrate. The output power of 2.2 mW has
been obtained at room temperature for 7.5 mA injection current. The
material gain has been estimated to be ~3156 cm-1 at room
temperature with the injection carrier concentration of 2×1017 cm-3.
The modulation bandwidth of this laser is measured to be 9.34 GHz
at room temperature for the biasing current of 2 mA above the
threshold value. The outcomes reveal that the proposed InGaAsbased
MQW laser is the promising one for optical communication
system.