Abstract: Around the globe, there is demand for the development of bio-based lubricant which will be biodegradable, non -toxic and environmental friendly. This paper outlines the friction and wear characteristics of Pongamia oil (PO) contaminated bio-lubricant by using pin-on-disc tribometer. To formulate the bio-lubricants, PO was blended in the ratios 15, 30 and 50% by volume with the base lubricant SAE 20 W 40. Tribological characteristics of these blends were carried out at 3.8 m/s sliding velocity and loads applied were 50, 100, 150 N. Experimental results showed that the lubrication regime that occurred during the test was boundary lubrication while the main wear mechanisms were abrasive and the adhesive wear. During testing, the lowest wear was found with the addition of 15% PO, and above this contamination, the wear rate was increased considerably. With increase in load, viscosity of all the bio-lubricants increases and meets the ISO VG 100 requirement at 40 oC except PB 50. The addition of PO in the base lubricant acted as a very good lubricant additive which reduced the friction and wear scar diameter during the test. It has been concluded that the PB 15 can act as an alternative lubricant to increase the mechanical efficiency at 3.8 m/s sliding velocity and contribute in reduction of dependence on the petroleum based products.
Abstract: In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.
Abstract: A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.