Parameters Extraction for Pseudomorphic HEMTs Using Genetic Algorithms
A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.
[1] G. Dambrine, A. Cappy, F. Heliodore and E. Playez, "A New Method
for Determining the FET Small-Signal Equivalent Circuit", IEEE Trans.
Microwave Theory Tech., vol. 36, pp. 1151-1159, July 1988.
[2] Dambrine ,Cappy , and Danneville", A New Extrinsic Circuit of
HEMT's Including Noise for Millimeter-Wave Circuit Design", IEEE
Trans. Microwave Theory Tech., vol. 46, No 9, September 1998.
[3] Chigaeva,Breitschaedel,Ambacher and Hilsenbeck ," Determination of
Small- Signal Parameters of GaN-based HEMTs", Proceedings 2000
IEEE, Cornell Conference of High performance Devices.
[4] El-Gendy Amr, "Modifications Of AlGaN/GaN HEMT Performance
Parameters and Equivalent Circuit", PhD Thesis, Faculty of
Engineering, Alexandria University ,2006.
[5] Chipperfield ,Fleming , Pohlheim and Fonseca" Genetic Algorithm
Toolbox For Use with MATLAB User Guide", version 1.2 , University
of Sheffield.
[6] D. E. Goldberg, Genetic algorithms in search, optimization & machine
learning, New York, Addison- Wesley Publishing Company, 1989.
[7] Fitronic Solid State," Applications Notes Discrete FET / PHEMT
Devices", Revision A - August 1996.
[8] GaAs MESFET Characteristics Using Least Squares Approximation by
Rational Functions." IEEE Transactions on Microwave Theory and
Techniques, vol. 41, no. 2, February 1993.
[9] J. W. Bandler and Q. J. Zhang, "An Automatic Decomposition
Approach to Optimization of Large Microwave Systems", IEEE Trans.
Microwave Theory Tech., vol. 35, pp. 1231- 1239, Dec.1987.
[10] Shirakawa, H. Oikawa, T. Shimura, Y. Kawasaki, Y. Ohashi, T. Saito
and Y. Daido, "An Approach to Determining An Equivalent Circuit
for HEMT's," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 499-
503, Mar. 1995.
[11] A. S. Patterson, V. F. Fusco, J. J. McKeown and J. A. C. Stewart, "A
Systematic Optimization Strategy for Microwave Device Modeling",
IEEE Trans. Microwave Tech., vol. 41, pp. 395- 405,Mar. 1993.
[12] M. Tim Jones, Artificial Intelligence a Systems Approach, Infinity
Science Press Hingham, Massachusetts, New Delhi, 2008.
[1] G. Dambrine, A. Cappy, F. Heliodore and E. Playez, "A New Method
for Determining the FET Small-Signal Equivalent Circuit", IEEE Trans.
Microwave Theory Tech., vol. 36, pp. 1151-1159, July 1988.
[2] Dambrine ,Cappy , and Danneville", A New Extrinsic Circuit of
HEMT's Including Noise for Millimeter-Wave Circuit Design", IEEE
Trans. Microwave Theory Tech., vol. 46, No 9, September 1998.
[3] Chigaeva,Breitschaedel,Ambacher and Hilsenbeck ," Determination of
Small- Signal Parameters of GaN-based HEMTs", Proceedings 2000
IEEE, Cornell Conference of High performance Devices.
[4] El-Gendy Amr, "Modifications Of AlGaN/GaN HEMT Performance
Parameters and Equivalent Circuit", PhD Thesis, Faculty of
Engineering, Alexandria University ,2006.
[5] Chipperfield ,Fleming , Pohlheim and Fonseca" Genetic Algorithm
Toolbox For Use with MATLAB User Guide", version 1.2 , University
of Sheffield.
[6] D. E. Goldberg, Genetic algorithms in search, optimization & machine
learning, New York, Addison- Wesley Publishing Company, 1989.
[7] Fitronic Solid State," Applications Notes Discrete FET / PHEMT
Devices", Revision A - August 1996.
[8] GaAs MESFET Characteristics Using Least Squares Approximation by
Rational Functions." IEEE Transactions on Microwave Theory and
Techniques, vol. 41, no. 2, February 1993.
[9] J. W. Bandler and Q. J. Zhang, "An Automatic Decomposition
Approach to Optimization of Large Microwave Systems", IEEE Trans.
Microwave Theory Tech., vol. 35, pp. 1231- 1239, Dec.1987.
[10] Shirakawa, H. Oikawa, T. Shimura, Y. Kawasaki, Y. Ohashi, T. Saito
and Y. Daido, "An Approach to Determining An Equivalent Circuit
for HEMT's," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 499-
503, Mar. 1995.
[11] A. S. Patterson, V. F. Fusco, J. J. McKeown and J. A. C. Stewart, "A
Systematic Optimization Strategy for Microwave Device Modeling",
IEEE Trans. Microwave Tech., vol. 41, pp. 395- 405,Mar. 1993.
[12] M. Tim Jones, Artificial Intelligence a Systems Approach, Infinity
Science Press Hingham, Massachusetts, New Delhi, 2008.
@article{"International Journal of Electrical, Electronic and Communication Sciences:62306", author = "Mazhar B. Tayel and Amr H. Yassin", title = "Parameters Extraction for Pseudomorphic HEMTs Using Genetic Algorithms", abstract = "A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.
", keywords = "PHEMT, Genetic Algorithms, small signal modeling, optimization.", volume = "3", number = "2", pages = "360-4", }
