Hall Coefficient in the Presence of Strong Electromagnetic Waves Caused by Confined Electrons and Phonons in a Rectangular Quantum Wire

The analytic expression for the Hall Coefficient (HC) caused by the confined electrons in the presence of a strong electromagnetic wave (EMW) including the effect of phonon confinement in rectangular quantum wires (RQWs) is calculated by using the quantum kinetic equation for electrons in the case of electron - optical phonon scattering. It is because the expression of the HC for the confined phonon case contains indexes m, m’ which are specific to the phonon confinement. The expression in a RQW is different from that for the case of unconfined phonons in a RQW or in 2D. The results are numerically calculated and discussed for a GaAs/GaAsAl RQW. The numerical results show that HC in a RQW can have both negative and positive values. This is different from the case of the absence of EMW and the case presence of EMW including the effect of phonon unconfinement in a RQW. These results are also compared with those in the case of unconfined phonons in a RQW and confined phonons in a quantum well. The conductivity in the case of confined phonon has more resonance peaks compared with that in case of unconfined phonons in a RQW. This new property is the same in quantum well. All results are compared with the case of unconfined phonons to see differences.

Influence of an External Magnetic Field on the Acoustomagnetoelectric Field in a Rectangular Quantum Wire with an Infinite Potential by Using a Quantum Kinetic Equation

The acoustomagnetoelectric (AME) field in a rectangular quantum wire with an infinite potential (RQWIP) is calculated in the presence of an external magnetic field (EMF) by using the quantum kinetic equation for the distribution function of electrons system interacting with external phonons and electrons scattering with internal acoustic phonon in a RQWIP. We obtained ananalytic expression for the AME field in the RQWIP in the presence of the EMF. The dependence of AME field on the frequency of external acoustic wave, the temperature T of system, the cyclotron frequency of the EMF and the intensity of the EMF is obtained. Theoretical results for the AME field are numerically evaluated, plotted and discussed for a specific RQWIP GaAs/GaAsAl. This result has shown that the dependence of the AME field on intensity of the EMF is nonlinearly and it is many distinct maxima in the quantized magnetic region. We also compared received fields with those for normal bulk semiconductors, quantum well and quantum wire to show the difference. The influence of an EMF on AME field in a RQWIP is newly developed.

Characterization of InGaAsP/InP Quantum Well Lasers

Analytical formula for the optical gain based on a simple parabolic-band by introducing theoretical expressions for the quantized energy is presented. The model used in this treatment take into account the effects of intraband relaxation. It is shown, as a result, that the gain for the TE mode is larger than that for TM mode and the presence of acceptor impurity increase the peak gain.

1/f Noise in Quantum-Size Heteronanostructures Based On GaAs and Alloys

The 1/f noise investigation in nanoscale light-emitting diodes and lasers, based on GaAs and alloys, is presented here. Leakage and additional (to recombination through quantum wells and/or dots) nonlinear currents were detected and it was shown that these currents are the main source of the 1/f noise in devices studied.

Numerical Calculation of the Ionization Energy of Donors in a Cubic Quantum well and Wire

The ionization energy in semiconductor systems in nano scale was investigated by using effective mass approximation. By introducing the Hamiltonian of the system, the variational technique was employed to calculate the ground state and the ionization energy of a donor at the center and in the case that the impurities are randomly distributed inside a cubic quantum well. The numerical results for GaAs/GaAlAs show that the ionization energy strongly depends on the well width for both cases and it decreases as the well width increases. The ionization energy of a quantum wire was also calculated and compared with the results for the well.

InAlGaN Quaternary Multi-Quantum Wells UVLaser Diode Performance and Characterization

The InAlGaN alloy has only recently began receiving serious attention into its growth and application. High quality InGaN films have led to the development of light emitting diodes (LEDs) and blue laser diodes (LDs). The quaternary InAlGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report an ultraviolet (UV) quaternary InAlGaN multi-quantum wells (MQWs) LD study by using the simulation program of Integrated System Engineering (ISE TCAD). Advanced physical models of semiconductor properties were used in order to obtain an optimized structure. The device performance which is affected by piezoelectric and thermal effects was studied via drift-diffusion model for carrier transport, optical gain and loss. The optical performance of the UV LD with different numbers of quantum wells was numerically investigated. The main peak of the emission wavelength for double quantum wells (DQWs) was shifted from 358 to 355.8 nm when the forward current was increased. Preliminary simulated results indicated that better output performance and lower threshold current could be obtained when the quantum number is four, with output power of 130 mW and threshold current of 140 mA.

Effects of Double Delta Doping on Millimeter and Sub-millimeter Wave Response of Two-Dimensional Hot Electrons in GaAs Nanostructures

Carrier mobility has become the most important characteristic of high speed low dimensional devices. Due to development of very fast switching semiconductor devices, speed of computer and communication equipment has been increasing day by day and will continue to do so in future. As the response of any device depends on the carrier motion within the devices, extensive studies of carrier mobility in the devices has been established essential for the growth in the field of low dimensional devices. Small-signal ac transport of degenerate two-dimensional hot electrons in GaAs quantum wells is studied here incorporating deformation potential acoustic, polar optic and ionized impurity scattering in the framework of heated drifted Fermi-Dirac carrier distribution. Delta doping is considered in the calculations to investigate the effects of double delta doping on millimeter and submillimeter wave response of two dimensional hot electrons in GaAs nanostructures. The inclusion of delta doping is found to enhance considerably the two dimensional electron density which in turn improves the carrier mobility (both ac and dc) values in the GaAs quantum wells thereby providing scope of getting higher speed devices in future.

A New Physical Modeling for Multiquantum Well Structure APD Considering Nonuniformity of Electric Field in Active Regin

In the present work we model a Multiquantum Well structure Separate Absorption and Charge Multiplication Avalanche Photodiode (MQW-SACM-APD), while the Absorption region coincide with the MQW. We consider the nonuniformity of electric field using split-step method in active region. This model is based on the carrier rate equations in the different regions of the device. Using the model we obtain the photocurrent, and dark current. As an example, InGaAs/InP SACM-APD and MQW-SACM-APD are simulated. There is a good agreement between the simulation and experimental results.

XPM Response of Multiple Quantum Well chirped DFB-SOA All Optical Flip-Flop Switching

In this paper, based on the coupled-mode and carrier rate equations, derivation of a dynamic model and numerically analysis of a MQW chirped DFB-SOA all-optical flip-flop is done precisely. We have analyzed the effects of strains of QW and MQW and cross phase modulation (XPM) on the dynamic response, and rise and fall times of the DFB-SOA all optical flip flop. We have shown that strained MQW active region in under an optimized condition into a DFB-SOA with chirped grating can improve the switching ON speed limitation in such a of the device, significantly while the fall time is increased. The values of the rise times for such an all optical flip-flop, are obtained in an optimized condition, areas tr=255ps.

The Emission Spectra Due to Exciton-Exciton Collisions in GaAs/AlGaAs Quantum Well System

Optical emission based on excitonic scattering processes becomes important in dense exciton systems in which the average distance between excitons is of the order of a few Bohr radii but still below the exciton screening threshold. The phenomena due to interactions among excited states play significant role in the emission near band edge of the material. The theory of two-exciton collisions for GaAs/AlGaAs quantum well systems is a mild attempt to understand the physics associated with the optical spectra due to excitonic scattering processes in these novel systems. The four typical processes considered give different spectral shape, peak position and temperature dependence of the emission spectra. We have used the theory of scattering together with the second order perturbation theory to derive the radiative power spontaneously emitted at an energy ħω by these processes. The results arrived at are purely qualitative in nature. The intensity of emitted light in quantum well systems varies inversely to the square of temperature, whereas in case of bulk materials it simply decreases with the  temperature.

High Performance In0.42Ga0.58As/In0.26Ga0.74As Vertical Cavity Surface Emitting Quantum Well Laser on In0.31Ga0.69As Ternary Substrate

This paper reports on the theoretical performance analysis of the 1.3 μm In0.42Ga0.58As /In0.26Ga0.74As multiple quantum well (MQW) vertical cavity surface emitting laser (VCSEL) on the ternary In0.31Ga0.69As substrate. The output power of 2.2 mW has been obtained at room temperature for 7.5 mA injection current. The material gain has been estimated to be ~3156 cm-1 at room temperature with the injection carrier concentration of 2×1017 cm-3. The modulation bandwidth of this laser is measured to be 9.34 GHz at room temperature for the biasing current of 2 mA above the threshold value. The outcomes reveal that the proposed InGaAsbased MQW laser is the promising one for optical communication system.