Abstract: The analytic expression for the Hall Coefficient (HC) caused by the confined electrons in the presence of a strong electromagnetic wave (EMW) including the effect of phonon confinement in rectangular quantum wires (RQWs) is calculated by using the quantum kinetic equation for electrons in the case of electron - optical phonon scattering. It is because the expression of the HC for the confined phonon case contains indexes m, m’ which are specific to the phonon confinement. The expression in a RQW is different from that for the case of unconfined phonons in a RQW or in 2D. The results are numerically calculated and discussed for a GaAs/GaAsAl RQW. The numerical results show that HC in a RQW can have both negative and positive values. This is different from the case of the absence of EMW and the case presence of EMW including the effect of phonon unconfinement in a RQW. These results are also compared with those in the case of unconfined phonons in a RQW and confined phonons in a quantum well. The conductivity in the case of confined phonon has more resonance peaks compared with that in case of unconfined phonons in a RQW. This new property is the same in quantum well. All results are compared with the case of unconfined phonons to see differences.
Abstract: The acoustomagnetoelectric (AME) field in a rectangular quantum wire with an infinite potential (RQWIP) is calculated in the presence of an external magnetic field (EMF) by using the quantum kinetic equation for the distribution function of electrons system interacting with external phonons and electrons scattering with internal acoustic phonon in a RQWIP. We obtained ananalytic expression for the AME field in the RQWIP in the presence of the EMF. The dependence of AME field on the frequency of external acoustic wave, the temperature T of system, the cyclotron frequency of the EMF and the intensity of the EMF is obtained. Theoretical results for the AME field are numerically evaluated, plotted and discussed for a specific RQWIP GaAs/GaAsAl. This result has shown that the dependence of the AME field on intensity of the EMF is nonlinearly and it is many distinct maxima in the quantized magnetic region. We also compared received fields with those for normal bulk semiconductors, quantum well and quantum wire to show the difference. The influence of an EMF on AME field in a RQWIP is newly developed.
Abstract: Analytical formula for the optical gain based on a
simple parabolic-band by introducing theoretical expressions for the
quantized energy is presented. The model used in this treatment take
into account the effects of intraband relaxation. It is shown, as a
result, that the gain for the TE mode is larger than that for TM mode
and the presence of acceptor impurity increase the peak gain.
Abstract: The 1/f noise investigation in nanoscale light-emitting
diodes and lasers, based on GaAs and alloys, is presented here.
Leakage and additional (to recombination through quantum wells
and/or dots) nonlinear currents were detected and it was shown that
these currents are the main source of the 1/f noise in devices studied.
Abstract: The ionization energy in semiconductor
systems in nano scale was investigated by using effective mass
approximation. By introducing the Hamiltonian of the system, the
variational technique was employed to calculate the ground state and
the ionization energy of a donor at the center and in the case that the
impurities are randomly distributed inside a cubic quantum well. The
numerical results for GaAs/GaAlAs show that the ionization energy
strongly depends on the well width for both cases and it decreases as
the well width increases. The ionization energy of a quantum wire
was also calculated and compared with the results for the well.
Abstract: The InAlGaN alloy has only recently began receiving
serious attention into its growth and application. High quality InGaN
films have led to the development of light emitting diodes (LEDs) and
blue laser diodes (LDs). The quaternary InAlGaN however, represents
a more versatile material since the bandgap and lattice constant can be
independently varied. We report an ultraviolet (UV) quaternary
InAlGaN multi-quantum wells (MQWs) LD study by using the
simulation program of Integrated System Engineering (ISE TCAD).
Advanced physical models of semiconductor properties were used in
order to obtain an optimized structure. The device performance which
is affected by piezoelectric and thermal effects was studied via
drift-diffusion model for carrier transport, optical gain and loss. The
optical performance of the UV LD with different numbers of quantum
wells was numerically investigated. The main peak of the emission
wavelength for double quantum wells (DQWs) was shifted from 358
to 355.8 nm when the forward current was increased. Preliminary
simulated results indicated that better output performance and lower
threshold current could be obtained when the quantum number is four,
with output power of 130 mW and threshold current of 140 mA.
Abstract: Carrier mobility has become the most important
characteristic of high speed low dimensional devices. Due to
development of very fast switching semiconductor devices, speed of
computer and communication equipment has been increasing day by
day and will continue to do so in future. As the response of any
device depends on the carrier motion within the devices, extensive
studies of carrier mobility in the devices has been established
essential for the growth in the field of low dimensional devices.
Small-signal ac transport of degenerate two-dimensional hot
electrons in GaAs quantum wells is studied here incorporating
deformation potential acoustic, polar optic and ionized impurity
scattering in the framework of heated drifted Fermi-Dirac carrier
distribution. Delta doping is considered in the calculations to
investigate the effects of double delta doping on millimeter and submillimeter
wave response of two dimensional hot electrons in GaAs
nanostructures. The inclusion of delta doping is found to enhance
considerably the two dimensional electron density which in turn
improves the carrier mobility (both ac and dc) values in the GaAs
quantum wells thereby providing scope of getting higher speed
devices in future.
Abstract: In the present work we model a Multiquantum Well
structure Separate Absorption and Charge Multiplication Avalanche
Photodiode (MQW-SACM-APD), while the Absorption region
coincide with the MQW. We consider the nonuniformity of electric
field using split-step method in active region. This model is based on
the carrier rate equations in the different regions of the device. Using
the model we obtain the photocurrent, and dark current. As an
example, InGaAs/InP SACM-APD and MQW-SACM-APD are
simulated. There is a good agreement between the simulation and
experimental results.
Abstract: In this paper, based on the coupled-mode and carrier rate equations, derivation of a dynamic model and numerically analysis of a MQW chirped DFB-SOA all-optical flip-flop is done precisely. We have analyzed the effects of strains of QW and MQW and cross phase modulation (XPM) on the dynamic response, and rise and fall times of the DFB-SOA all optical flip flop. We have shown that strained MQW active region in under an optimized condition into a DFB-SOA with chirped grating can improve the switching ON speed limitation in such a of the device, significantly while the fall time is increased. The values of the rise times for such an all optical flip-flop, are obtained in an optimized condition, areas tr=255ps.
Abstract: Optical emission based on excitonic scattering processes becomes important in dense exciton systems in which the average distance between excitons is of the order of a few Bohr radii but still below the exciton screening threshold. The phenomena due to interactions among excited states play significant role in the emission near band edge of the material. The theory of two-exciton collisions for GaAs/AlGaAs quantum well systems is a mild attempt to understand the physics associated with the optical spectra due to excitonic scattering processes in these novel systems. The four typical processes considered give different spectral shape, peak position and temperature dependence of the emission spectra. We have used the theory of scattering together with the second order perturbation theory to derive the radiative power spontaneously emitted at an energy ħω by these processes. The results arrived at are purely qualitative in nature. The intensity of emitted light in quantum well systems varies inversely to the square of temperature, whereas in case of bulk materials it simply decreases with the temperature.
Abstract: This paper reports on the theoretical performance
analysis of the 1.3 μm In0.42Ga0.58As /In0.26Ga0.74As multiple quantum
well (MQW) vertical cavity surface emitting laser (VCSEL) on the
ternary In0.31Ga0.69As substrate. The output power of 2.2 mW has
been obtained at room temperature for 7.5 mA injection current. The
material gain has been estimated to be ~3156 cm-1 at room
temperature with the injection carrier concentration of 2×1017 cm-3.
The modulation bandwidth of this laser is measured to be 9.34 GHz
at room temperature for the biasing current of 2 mA above the
threshold value. The outcomes reveal that the proposed InGaAsbased
MQW laser is the promising one for optical communication
system.