Measurement of I-V Characteristics of a PtSi/p-Si Schottky Barrier Diode at low Temperatures
The current-voltage characteristics of a PtSi/p-Si
Schottky barrier diode was measured at the temperature of 85 K and
from the forward bias region of the I-V curve, the electrical
parameters of the diode were measured by three methods. The results
obtained from the two methods which considered the series resistance
were in close agreement with each other and from them barrier height
(), ideality factor (n) and series resistance () were found to be
0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V
characteristics in the temperature range of 85-136 K the electrical
parameters were observed to have strong dependency on temperature.
The increase of barrier height and decrease of ideality factor with
increasing temperature is attributed to the existence of barrier height
inhomogeneities in the silicide-semiconductor structure.
[1] M.C. Li, L.C. Zhao, X.H. Zhen, X.K. Chen, "Effects of annealing
processing on morphological, compositional and Schottky
characterization of PtSi/Si diodes," Materials Letters., vol. 57,
2003, pp. 3735- 3740.
[2] H. Norde, "A modified forward I-V plot for Schottky diodes with
high series resistance," J. Appl. Phys., vol. 50, no. 7, 1979, pp.
5052-5053.
[3] S.K. Cheung, N.W. Cheung, "Extraction of Schottky Diode Parameters
from Forward Current- Voltage Characteristics," Appl. Phys. Lett., vol.
49, 1986, pp. 85-87.
[4] E.H. Rhoderick, Metal- Semiconductor Contacts, Clarendon, Oxford,
1988.
[5] S. Karatas, S. Altındal, A.Türüt, A. Özmen, "Temperature dependence
of characteristics parameters of the terminated Sn/p-Si(1 0 0) Schottky
contacts," Appl. Surf. Sci., vol. 217, 2003, pp. 250-260.
[6] D. Donoval, M. Barus and M. Zdimal, "Analysis of I-V measurements
on PtSi-Si Schottky structures in a wide temperature range," Solid-State
Electron., vol. 34, 1991, pp. 1365-1373.
[1] M.C. Li, L.C. Zhao, X.H. Zhen, X.K. Chen, "Effects of annealing
processing on morphological, compositional and Schottky
characterization of PtSi/Si diodes," Materials Letters., vol. 57,
2003, pp. 3735- 3740.
[2] H. Norde, "A modified forward I-V plot for Schottky diodes with
high series resistance," J. Appl. Phys., vol. 50, no. 7, 1979, pp.
5052-5053.
[3] S.K. Cheung, N.W. Cheung, "Extraction of Schottky Diode Parameters
from Forward Current- Voltage Characteristics," Appl. Phys. Lett., vol.
49, 1986, pp. 85-87.
[4] E.H. Rhoderick, Metal- Semiconductor Contacts, Clarendon, Oxford,
1988.
[5] S. Karatas, S. Altındal, A.Türüt, A. Özmen, "Temperature dependence
of characteristics parameters of the terminated Sn/p-Si(1 0 0) Schottky
contacts," Appl. Surf. Sci., vol. 217, 2003, pp. 250-260.
[6] D. Donoval, M. Barus and M. Zdimal, "Analysis of I-V measurements
on PtSi-Si Schottky structures in a wide temperature range," Solid-State
Electron., vol. 34, 1991, pp. 1365-1373.
@article{"International Journal of Electrical, Electronic and Communication Sciences:64875", author = "Somayeh Gholami and Meysam Khakbaz", title = "Measurement of I-V Characteristics of a PtSi/p-Si Schottky Barrier Diode at low Temperatures", abstract = "The current-voltage characteristics of a PtSi/p-Si
Schottky barrier diode was measured at the temperature of 85 K and
from the forward bias region of the I-V curve, the electrical
parameters of the diode were measured by three methods. The results
obtained from the two methods which considered the series resistance
were in close agreement with each other and from them barrier height
(), ideality factor (n) and series resistance () were found to be
0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V
characteristics in the temperature range of 85-136 K the electrical
parameters were observed to have strong dependency on temperature.
The increase of barrier height and decrease of ideality factor with
increasing temperature is attributed to the existence of barrier height
inhomogeneities in the silicide-semiconductor structure.", keywords = "Schottky diode, barrier height, series resistance, I-V, barrier height inhomogeneities.", volume = "5", number = "9", pages = "1289-4", }