Abstract: Fluctuations of Schottky diode parameters in a
structure of the mixer are investigated. These fluctuations are
manifested in two ways. At the first, they lead to fluctuations in the
transfer factor that is lead to the amplitude fluctuations in the signal
of intermediate frequency. On the basis of the measurement data of
1/f noise of the diode at forward current, the estimation of a spectrum
of relative fluctuations in transfer factor of the mixer is executed.
Current dependence of the spectrum of relative fluctuations in
transfer factor of the mixer and dependence of the spectrum of
relative fluctuations in transfer factor of the mixer on the amplitude
of the heterodyne signal are investigated. At the second, fluctuations
in parameters of the diode lead to occurrence of 1/f noise in the
output signal of the mixer. This noise limits the sensitivity of the
mixer to the value of received signal.
Abstract: The current-voltage (I-V) characteristics of Pd/n-GaN Schottky barrier were studied at temperatures over room temperature (300-470K). The values of ideality factor (n), zero-bias barrier height (φB0), flat barrier height (φBF) and series resistance (Rs) obtained from I-V-T measurements were found to be strongly temperature dependent while (φBo) increase, (n), (φBF) and (Rs) decrease with increasing temperature. The apparent Richardson constant was found to be 2.1x10-9 Acm-2K-2 and mean barrier height of 0.19 eV. After barrier height inhomogeneities correction, by assuming a Gaussian distribution (GD) of the barrier heights, the Richardson constant and the mean barrier height were obtained as 23 Acm-2K-2 and 1.78eV, respectively. The corrected Richardson constant was very closer to theoretical value of 26 Acm-2K-2.
Abstract: In this paper a new design of a broadband microwave
power limiter is presented and validated into simulation by using
ADS software (Advanced Design System) from Agilent technologies.
The final circuit is built on microstrip lines by using identical Zero
Bias Schottky diodes. The power limiter is designed by Associating 3
stages Schottky diodes. The obtained simulation results permit to
validate this circuit with a threshold input power level of 0 dBm until
a maximum input power of 30 dBm.
Abstract: The current-voltage characteristics of a PtSi/p-Si
Schottky barrier diode was measured at the temperature of 85 K and
from the forward bias region of the I-V curve, the electrical
parameters of the diode were measured by three methods. The results
obtained from the two methods which considered the series resistance
were in close agreement with each other and from them barrier height
(), ideality factor (n) and series resistance () were found to be
0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V
characteristics in the temperature range of 85-136 K the electrical
parameters were observed to have strong dependency on temperature.
The increase of barrier height and decrease of ideality factor with
increasing temperature is attributed to the existence of barrier height
inhomogeneities in the silicide-semiconductor structure.
Abstract: In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by using the Cheung functions. From semi-log current-voltage characteristics the values of n and b were found 1.93 and 0.254 eV, respectively, while by using Cheung functions their values were calculated 1.89 and 0.26 eV, respectively. The effect of series resistance was also analyzed by Cheung functions. The series resistance RS values were determined from dV/d(lnI)–I and H(I)–I graphs and were found to be 1.1 k and 1.3 k, respectively.