Abstract: In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by using the Cheung functions. From semi-log current-voltage characteristics the values of n and b were found 1.93 and 0.254 eV, respectively, while by using Cheung functions their values were calculated 1.89 and 0.26 eV, respectively. The effect of series resistance was also analyzed by Cheung functions. The series resistance RS values were determined from dV/d(lnI)–I and H(I)–I graphs and were found to be 1.1 k and 1.3 k, respectively.
Abstract: In this work, an organic compound 5,10,15,20-
Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu)
is studied as an active material for thin film electronic devices. To
investigate the electrical properties of TDTBPPCu, junction of
TDTBPPCu with heavily doped n-Si and Al is fabricated.
TDTBPPCu film was sandwiched between Al and n-Si electrodes.
Various electrical parameters of TDTBPPCu are determined. The
current-voltage characteristics of the junction are nonlinear,
asymmetric and show rectification behavior, which gives the clue of
formation of depletion region. This behavior indicates the potential
of TDTBPPCu for electronics applications. The current-voltage and
capacitance-voltage techniques are used to find the different
electronic parameters.