Fluctuations of Transfer Factor of the Mixer Based on Schottky Diode
Fluctuations of Schottky diode parameters in a
structure of the mixer are investigated. These fluctuations are
manifested in two ways. At the first, they lead to fluctuations in the
transfer factor that is lead to the amplitude fluctuations in the signal
of intermediate frequency. On the basis of the measurement data of
1/f noise of the diode at forward current, the estimation of a spectrum
of relative fluctuations in transfer factor of the mixer is executed.
Current dependence of the spectrum of relative fluctuations in
transfer factor of the mixer and dependence of the spectrum of
relative fluctuations in transfer factor of the mixer on the amplitude
of the heterodyne signal are investigated. At the second, fluctuations
in parameters of the diode lead to occurrence of 1/f noise in the
output signal of the mixer. This noise limits the sensitivity of the
mixer to the value of received signal.
[1] Al. V. Klyuev, M.I. Ryzhkin, An. V. Klyuev, Proceedings of the
International Scientific and Technical Conference «INTERMATIC –
2013», December 2–6, 2013, Moscow Edited by A. Sigov, Part 3, p.
105. (in Russian).
[2] S. A. Maas. Microwave Mixers, 2nd edition, Artech House, 1993. 335 p.
ISBN 0-89006-605-1.
[3] J. Hesler, W. Hall, T. Crowe at al. “Fixed-Tuned Submillimeter
Wavelength Waveguide Mixers Using Planar Schottky Barrier Diodes”,
IEEE Trans. Microw. Theory Tech. 1997. V. 45, № 5. P. 653.
[4] A. Maestrini, B. Thomas, Wang. at al. “Schottky diode-based terahertz
frequency multipliers and mixers”, Comptes Rendus de l’Academie des
Sciences, Physique. 2010. V. 11, № 7–8. P. 480.
[5] B. Thomas, S. Rea, B. Moyna at al. “A 320–360 GHz Subharmonically
Pumped Image Rejection Mixer Using Planar Schottky Diodes”, IEEE
Microwave and Wireless Components Letters. 2009. V. 19, № 2. P. 101.
[6] B. Thomas, A. Maestrini and G. Beudin, “A low-noise fixed-tuned 300-
360-GHz sub-harmonic mixer using planar Schottky diodes”,
Microwave and Wireless Components Letters, IEEE. 2005. V. 15, № 12.
P. 865.
[7] D. Pardo, J. Grajal, B. Mencía, S. Pérez, J. Mateos and T. González,
“Harmonic Generation and Noise in GaAs and GaN Schottky Diodes”,
21-st International Symposium on Space Terahertz Technology, Oxford,
23–25 March, 2010, pp. 400–403.
[8] N. Su, Z. Zhang, J. N. Schulman and P. Fay, “Temperature dependence
of high frequency and noise performance of Sb-heterostructure
millimeter-wave detectors”, IEEE Electron Device Lett. 28(5) (2007)
336–339.
[9] Jeffrey L. Hesler and Thomas W. Crowe, “Responsivity and Noise
Measurements of Zero-Bias Schottky Diode Detectors”, 18-th Intl.
Symp. Space Terahertz Techn., Pasadena, March 2007, pp.1–4.
[10] W. Chandra, L. K. Ang and X. Zhou, “Shot noise reduction of space
charge limited electron injection through a Schottky contact for a GaN
diode”, Phys. Rev. B 81(12) (2010) 125321.
[11] P. Shiktorov, E. Starikov, V. Gruzinskis at al., “Analytical model of
high-frequency noise spectrum in Schottky-barrier diodes”, IEEE
Electron Device Letters 26(1) (2005) 2–4.
[12] S. Pérez, T. González , P. Shiktorov at al., “Noise in Schottky-barrier
diodes: from static to large-signal operation”, Proc. of the SPIE 5470
(2004) 322–336.
[13] A. H. Mahi, F. Z. Mahi, and L. Varani, “Terahertz Current and Voltage
Noise in Nanometric Schottky-barrier Diodes”, PIERS Proceedings,
Marrakesh, Morocco, March 20-23, 2011. pp. 710–713.
[14] F. Z. Mahi, A. Helmaoui, L. Varani, P. Shiktorov, E. Starikov and V.
Gruzhinskis, “Calculation of the intrinsic spectral density of current
fluctuations in nanometric Schottky-barrier diodes at terahertz
frequencies”, Physica B 403 (2008) 3766–3768.
[15] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, Proceedings of the X
International Scientific and Technical Conference «INTERMATIC –
2011», November 14–17, 2011, Moscow Edited by A. Sigov, Part 1, p.
199. (in Russian).
[16] A.V. Klyuev, Vestnik of UNN, no 4, p. 53, 2009. (in Russian)
[17] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, “Modification of Van der
Ziel relation for spectrum of noise in p–n junction”, Fluctuation and
Noise Letters. 2012. V. 11, № 2. 1250015. DOI:
10.1142/S0219477512500150.
[18] A. V. Klyuev, Low-Frequency Noise in Nanoscale Semiconductor
Structures: Sources, Measurement, Methods of Analysis (Lambert
Academic Publishing, Saarbrücken, 2011) (in Russian).
[19] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, Vestnik of UNN, no 5, p.
81, 2009. (in Russian).
[20] A. V. Klyuev, “Noninertial Feedback Detection of a Random Process
Using a Schottky Diode with δ-Doping”, Moscow University Physics
Bulletin. 66 (3), 226 (2011).
[21] A. V. Klyuev, “Inertial detecting of noise by Schottky Diode with δ-
Doping”, Moscow University Physics Bulletin. 67 (3), 251 (2012).
[22] A. V. Klyuev, “Detection of a random process with the use of a δ-doped
Schottky diode”, J. Commun. Technol. Electron. 58(2) (2013) 178–184,
http://dx.doi.org/10.1134/S1064226913010063.
[23] A. V. Klyuev, “Cumulant analysis of Detection of random process
Using a Schottky Diode with δ-Doping”, International Journal of
Modern Physics B. 2013. V. 27, № 13. 1350049. DOI:
10.1142/S0217979213500495.
[24] A.V. Klyuev, Vestnik of UNN, no 5(3), p. 197, 2011. (in Russian)
[25] O. V. Bolhovskaya, A. V. Klyuev, Proceedings of the Russian
Universities: Radioelectronics. Saint Petersburg. 2013, V. 1. P. 48. ISSN
1993-8985.
[26] A. V. Yakimov, A. V. Klyuev, E. I. Shmelev at al. “1/F Noise In Si
Delta-Doped Schottky Diodes”, AIP Conf. Proc. Proc. 20th Int. Conf.
“Noise and Fluctuations, ICNF 2009”. Pisa, Italy, 14–19 June 2009. Ed.
by Macucci M., Basso G. 2009. V. 1129. Noise and Fluctuations, ICNF
2009. P. 225. DOI:10.1063/1.3140436.
[27] E. I. Shmelev, A. V. Klyuev, A. V. Yakimov, “Complexes of Spatially
Multistable Defects as the Source of 1/f Noise in GaAs Devices”,
Fluctuation and Noise Letters 12 (1) (2013) 1350008-1–1350008-13.
(DOI: 10.1142/S0219477513500089).
[28] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, Vestnik of UNN, no 5(1),
p. 57, 2010. (in Russian).
[29] A. V. Klyuev, A. V. Yakimov, Vestnik of UNN, no 6, p. 52, 2007. (in
Russian).
[30] A. V. Klyuev, A. V. Yakimov, E. I. Shmelev, “Modification of A. Van
der Ziel relation for natural noise in diodes with non-ideality factor of I–
V characteristic η>1”, AIP Conf. Proc. Proc. 20th Int. Conf. “Noise and
Fluctuations, ICNF 2009”. Pisa, Italy, 14-19 June 2009. Ed. by Macucci
M., Basso G. 2009. V. 1129. Noise and Fluctuations, ICNF 2009. P.
361. DOI:10.1063/1.3140474.
[31] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, “1/F noise in
TiAu/SiO2/GaAs Schottky diodes”, 22nd International Conference on
Noise and Fluctuations (ICNF), Montpellier, France, June 24–28, 2013.
Page(s): 1–4 Print ISBN: 978-1-4799-0668-0. INSPEC Accession
Number: 13710883. DOI:10.1109/ICNF.2013.6578990.
[32] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, “Sources of 1/f noise in Si
delta-doped Schottky diodes”, ICNF 2011 – IEEE Proceedings of 21st
International Conference on Noise and Fluctuations, Eds. M.J. Deen and
C.H. Chen, Toronto, Canada. (12–16 June 2011). 2011. P. 106.
[33] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, “Defects Influenced by the
Jahn-Teller Effect as the Sources of Flicker Noise in GaAs Based
Devices”, ICNF 2011 – IEEE Proceedings of 21st International
Conference on Noise and Fluctuations, Eds. M.J. Deen and C.H. Chen,
Toronto, Canada. (12–16 June 2011). 2011. P. 180.
[34] A. N. Malakhov, Fluctuations in self-oscillating systems. M.: Nauka,
1968. 660 p. (in Russian).
[35] L. S. Gutkin, Transformation of super high frequency and detection. M.;
L. Gosenergoizdat, 1953. 415 p. (in Russian).
[36] A. N. Malakhov, Radiophysics and Quantum Electronics 3(6) (1960)
1001. (in Russian).
[37] E. H. Rhoderich, Metal-Semiconductor Contacts. Clarendon Press,
Oxford, 1978.
[38] Al. V. Klyuev, M. R. Kiselev, An. V. Klyuev, Vestnik of UNN, no 1(2),
p. 158, 2014. (in Russian).
[39] A. V. Belyakov, A. V. Klyuev and A. V. Yakimov, “Manifestation of 1/f
leakage noise in nanoscale light-emitting structures”, Radiophysics and
Quantum Electronics 51(2) (2008) 134–144.
[40] A. V. Klyuev, A. V. Yakimov, “1/f noise in GaAs nanoscale lightemitting
structures”, Physica B. 2014. V. 440. P. 145.
http://dx.doi.org/10.1016/j.physb.2014.01.021.
[1] Al. V. Klyuev, M.I. Ryzhkin, An. V. Klyuev, Proceedings of the
International Scientific and Technical Conference «INTERMATIC –
2013», December 2–6, 2013, Moscow Edited by A. Sigov, Part 3, p.
105. (in Russian).
[2] S. A. Maas. Microwave Mixers, 2nd edition, Artech House, 1993. 335 p.
ISBN 0-89006-605-1.
[3] J. Hesler, W. Hall, T. Crowe at al. “Fixed-Tuned Submillimeter
Wavelength Waveguide Mixers Using Planar Schottky Barrier Diodes”,
IEEE Trans. Microw. Theory Tech. 1997. V. 45, № 5. P. 653.
[4] A. Maestrini, B. Thomas, Wang. at al. “Schottky diode-based terahertz
frequency multipliers and mixers”, Comptes Rendus de l’Academie des
Sciences, Physique. 2010. V. 11, № 7–8. P. 480.
[5] B. Thomas, S. Rea, B. Moyna at al. “A 320–360 GHz Subharmonically
Pumped Image Rejection Mixer Using Planar Schottky Diodes”, IEEE
Microwave and Wireless Components Letters. 2009. V. 19, № 2. P. 101.
[6] B. Thomas, A. Maestrini and G. Beudin, “A low-noise fixed-tuned 300-
360-GHz sub-harmonic mixer using planar Schottky diodes”,
Microwave and Wireless Components Letters, IEEE. 2005. V. 15, № 12.
P. 865.
[7] D. Pardo, J. Grajal, B. Mencía, S. Pérez, J. Mateos and T. González,
“Harmonic Generation and Noise in GaAs and GaN Schottky Diodes”,
21-st International Symposium on Space Terahertz Technology, Oxford,
23–25 March, 2010, pp. 400–403.
[8] N. Su, Z. Zhang, J. N. Schulman and P. Fay, “Temperature dependence
of high frequency and noise performance of Sb-heterostructure
millimeter-wave detectors”, IEEE Electron Device Lett. 28(5) (2007)
336–339.
[9] Jeffrey L. Hesler and Thomas W. Crowe, “Responsivity and Noise
Measurements of Zero-Bias Schottky Diode Detectors”, 18-th Intl.
Symp. Space Terahertz Techn., Pasadena, March 2007, pp.1–4.
[10] W. Chandra, L. K. Ang and X. Zhou, “Shot noise reduction of space
charge limited electron injection through a Schottky contact for a GaN
diode”, Phys. Rev. B 81(12) (2010) 125321.
[11] P. Shiktorov, E. Starikov, V. Gruzinskis at al., “Analytical model of
high-frequency noise spectrum in Schottky-barrier diodes”, IEEE
Electron Device Letters 26(1) (2005) 2–4.
[12] S. Pérez, T. González , P. Shiktorov at al., “Noise in Schottky-barrier
diodes: from static to large-signal operation”, Proc. of the SPIE 5470
(2004) 322–336.
[13] A. H. Mahi, F. Z. Mahi, and L. Varani, “Terahertz Current and Voltage
Noise in Nanometric Schottky-barrier Diodes”, PIERS Proceedings,
Marrakesh, Morocco, March 20-23, 2011. pp. 710–713.
[14] F. Z. Mahi, A. Helmaoui, L. Varani, P. Shiktorov, E. Starikov and V.
Gruzhinskis, “Calculation of the intrinsic spectral density of current
fluctuations in nanometric Schottky-barrier diodes at terahertz
frequencies”, Physica B 403 (2008) 3766–3768.
[15] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, Proceedings of the X
International Scientific and Technical Conference «INTERMATIC –
2011», November 14–17, 2011, Moscow Edited by A. Sigov, Part 1, p.
199. (in Russian).
[16] A.V. Klyuev, Vestnik of UNN, no 4, p. 53, 2009. (in Russian)
[17] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, “Modification of Van der
Ziel relation for spectrum of noise in p–n junction”, Fluctuation and
Noise Letters. 2012. V. 11, № 2. 1250015. DOI:
10.1142/S0219477512500150.
[18] A. V. Klyuev, Low-Frequency Noise in Nanoscale Semiconductor
Structures: Sources, Measurement, Methods of Analysis (Lambert
Academic Publishing, Saarbrücken, 2011) (in Russian).
[19] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, Vestnik of UNN, no 5, p.
81, 2009. (in Russian).
[20] A. V. Klyuev, “Noninertial Feedback Detection of a Random Process
Using a Schottky Diode with δ-Doping”, Moscow University Physics
Bulletin. 66 (3), 226 (2011).
[21] A. V. Klyuev, “Inertial detecting of noise by Schottky Diode with δ-
Doping”, Moscow University Physics Bulletin. 67 (3), 251 (2012).
[22] A. V. Klyuev, “Detection of a random process with the use of a δ-doped
Schottky diode”, J. Commun. Technol. Electron. 58(2) (2013) 178–184,
http://dx.doi.org/10.1134/S1064226913010063.
[23] A. V. Klyuev, “Cumulant analysis of Detection of random process
Using a Schottky Diode with δ-Doping”, International Journal of
Modern Physics B. 2013. V. 27, № 13. 1350049. DOI:
10.1142/S0217979213500495.
[24] A.V. Klyuev, Vestnik of UNN, no 5(3), p. 197, 2011. (in Russian)
[25] O. V. Bolhovskaya, A. V. Klyuev, Proceedings of the Russian
Universities: Radioelectronics. Saint Petersburg. 2013, V. 1. P. 48. ISSN
1993-8985.
[26] A. V. Yakimov, A. V. Klyuev, E. I. Shmelev at al. “1/F Noise In Si
Delta-Doped Schottky Diodes”, AIP Conf. Proc. Proc. 20th Int. Conf.
“Noise and Fluctuations, ICNF 2009”. Pisa, Italy, 14–19 June 2009. Ed.
by Macucci M., Basso G. 2009. V. 1129. Noise and Fluctuations, ICNF
2009. P. 225. DOI:10.1063/1.3140436.
[27] E. I. Shmelev, A. V. Klyuev, A. V. Yakimov, “Complexes of Spatially
Multistable Defects as the Source of 1/f Noise in GaAs Devices”,
Fluctuation and Noise Letters 12 (1) (2013) 1350008-1–1350008-13.
(DOI: 10.1142/S0219477513500089).
[28] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, Vestnik of UNN, no 5(1),
p. 57, 2010. (in Russian).
[29] A. V. Klyuev, A. V. Yakimov, Vestnik of UNN, no 6, p. 52, 2007. (in
Russian).
[30] A. V. Klyuev, A. V. Yakimov, E. I. Shmelev, “Modification of A. Van
der Ziel relation for natural noise in diodes with non-ideality factor of I–
V characteristic η>1”, AIP Conf. Proc. Proc. 20th Int. Conf. “Noise and
Fluctuations, ICNF 2009”. Pisa, Italy, 14-19 June 2009. Ed. by Macucci
M., Basso G. 2009. V. 1129. Noise and Fluctuations, ICNF 2009. P.
361. DOI:10.1063/1.3140474.
[31] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, “1/F noise in
TiAu/SiO2/GaAs Schottky diodes”, 22nd International Conference on
Noise and Fluctuations (ICNF), Montpellier, France, June 24–28, 2013.
Page(s): 1–4 Print ISBN: 978-1-4799-0668-0. INSPEC Accession
Number: 13710883. DOI:10.1109/ICNF.2013.6578990.
[32] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, “Sources of 1/f noise in Si
delta-doped Schottky diodes”, ICNF 2011 – IEEE Proceedings of 21st
International Conference on Noise and Fluctuations, Eds. M.J. Deen and
C.H. Chen, Toronto, Canada. (12–16 June 2011). 2011. P. 106.
[33] A. V. Klyuev, E. I. Shmelev, A. V. Yakimov, “Defects Influenced by the
Jahn-Teller Effect as the Sources of Flicker Noise in GaAs Based
Devices”, ICNF 2011 – IEEE Proceedings of 21st International
Conference on Noise and Fluctuations, Eds. M.J. Deen and C.H. Chen,
Toronto, Canada. (12–16 June 2011). 2011. P. 180.
[34] A. N. Malakhov, Fluctuations in self-oscillating systems. M.: Nauka,
1968. 660 p. (in Russian).
[35] L. S. Gutkin, Transformation of super high frequency and detection. M.;
L. Gosenergoizdat, 1953. 415 p. (in Russian).
[36] A. N. Malakhov, Radiophysics and Quantum Electronics 3(6) (1960)
1001. (in Russian).
[37] E. H. Rhoderich, Metal-Semiconductor Contacts. Clarendon Press,
Oxford, 1978.
[38] Al. V. Klyuev, M. R. Kiselev, An. V. Klyuev, Vestnik of UNN, no 1(2),
p. 158, 2014. (in Russian).
[39] A. V. Belyakov, A. V. Klyuev and A. V. Yakimov, “Manifestation of 1/f
leakage noise in nanoscale light-emitting structures”, Radiophysics and
Quantum Electronics 51(2) (2008) 134–144.
[40] A. V. Klyuev, A. V. Yakimov, “1/f noise in GaAs nanoscale lightemitting
structures”, Physica B. 2014. V. 440. P. 145.
http://dx.doi.org/10.1016/j.physb.2014.01.021.
@article{"International Journal of Electrical, Electronic and Communication Sciences:71692", author = "Alexey V. Klyuev and Arkady V. Yakimov and Mikhail I. Ryzhkin and Andrey V. Klyuev", title = "Fluctuations of Transfer Factor of the Mixer Based on Schottky Diode", abstract = "Fluctuations of Schottky diode parameters in a
structure of the mixer are investigated. These fluctuations are
manifested in two ways. At the first, they lead to fluctuations in the
transfer factor that is lead to the amplitude fluctuations in the signal
of intermediate frequency. On the basis of the measurement data of
1/f noise of the diode at forward current, the estimation of a spectrum
of relative fluctuations in transfer factor of the mixer is executed.
Current dependence of the spectrum of relative fluctuations in
transfer factor of the mixer and dependence of the spectrum of
relative fluctuations in transfer factor of the mixer on the amplitude
of the heterodyne signal are investigated. At the second, fluctuations
in parameters of the diode lead to occurrence of 1/f noise in the
output signal of the mixer. This noise limits the sensitivity of the
mixer to the value of received signal.", keywords = "Current-voltage characteristic, fluctuations, mixer,
Schottky diode, 1/f noise.", volume = "9", number = "12", pages = "1441-4", }
