Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology

The design of Class A and Class AB 2-stage X band Power Amplifier is described in this report. This power amplifier is part of a transceiver used in radar for monitoring iron characteristics in a blast furnace. The circuit was designed using foundry WIN Semiconductors. The specification requires 15dB gain in the linear region, VSWR nearly 1 at input as well as at the output, an output power of 10 dBm and good stable performance in the band 10.9-12.2 GHz. The design was implemented by using inter-stage configuration, the Class A amplifier was chosen for driver stage i.e. the first amplifier focusing on the gain and the output amplifier conducted at Class AB with more emphasis on output power.




References:
[1] G. S. Cripps, "RF Power Amplifiers for Wireless Communications,"
Artech House, 1999, chapters 3, 5, 8.
[2] Harald, Par Rundqvist, "Active Microwave Circuit", Chalmers
University.