Abstract: The yield management system is very important to produce high-quality semiconductor chips in the semiconductor manufacturing process. In order to improve quality of semiconductors, various tests are conducted in the post fabrication (FAB) process. During the test process, large amount of data are collected and the data includes a lot of information about defect. In general, the defect on the wafer is the main causes of yield loss. Therefore, analyzing the defect data is necessary to improve performance of yield prediction. The wafer bin map (WBM) is one of the data collected in the test process and includes defect information such as the fail bit patterns. The fail bit has characteristics of spatial point patterns. Therefore, this paper proposes the feature extraction method using the spatial point pattern analysis. Actual data obtained from the semiconductor process is used for experiments and the experimental result shows that the proposed method is more accurately recognize the fail bit patterns.
Abstract: Depending on the big data analysis becomes important, yield prediction using data from the semiconductor process is essential. In general, yield prediction and analysis of the causes of the failure are closely related. The purpose of this study is to analyze pattern affects the final test results using a die map based clustering. Many researches have been conducted using die data from the semiconductor test process. However, analysis has limitation as the test data is less directly related to the final test results. Therefore, this study proposes a framework for analysis through clustering using more detailed data than existing die data. This study consists of three phases. In the first phase, die map is created through fail bit data in each sub-area of die. In the second phase, clustering using map data is performed. And the third stage is to find patterns that affect final test result. Finally, the proposed three steps are applied to actual industrial data and experimental results showed the potential field application.
Abstract: This paper describes the design of new method of
propagation delay measurement in micro and nanostructures during
characterization of ASIC standard library cell. Providing more
accuracy timing information about library cell to the design team we
can improve a quality of timing analysis inside of ASIC design flow
process. Also, this information could be very useful for semiconductor
foundry team to make correction in technology process. By
comparison of the propagation delay in the CMOS element and result
of analog SPICE simulation. It was implemented as digital IP core for
semiconductor manufacturing process. Specialized method helps to
observe the propagation time delay in one element of the standard-cell
library with up-to picoseconds accuracy and less. Thus, the special
useful solutions for VLSI schematic to parameters extraction, basic
cell layout verification, design simulation and verification are
announced.