Numerical Calculation of the Ionization Energy of Donors in a Cubic Quantum well and Wire
The ionization energy in semiconductor
systems in nano scale was investigated by using effective mass
approximation. By introducing the Hamiltonian of the system, the
variational technique was employed to calculate the ground state and
the ionization energy of a donor at the center and in the case that the
impurities are randomly distributed inside a cubic quantum well. The
numerical results for GaAs/GaAlAs show that the ionization energy
strongly depends on the well width for both cases and it decreases as
the well width increases. The ionization energy of a quantum wire
was also calculated and compared with the results for the well.
[1] John. Peter. A., Navaveethankrishnan. K., (2001), Solid State Commun.,
120.393-396.
[2] John. Peter. A., Navaveethankrishnan. K.,(2002), Physica E, 15,153-158.
[3] P. W. Anderson, Phys. Rev. 109 (1958) 1492.
[4] John. Peter. A., Navaveethankrishnan. K., (2002), Solid State
Commun.,122, 655-659.
[5] E.A. Abrahams, P.W. Anderson, D.C. Licciardello, T.V.
[6] Ramakrishnan, Phys. Rev. Lett. 42 (1979) 673.
[7] John. Peter. A., Navaveethankrishnan. K., (2000), phys. State. sol. (b),
220,897.
[8] Bastard. G., Brum. J.A., Ferreira. R., Solid State Phys. (1991), 44, 229.
[9] John. Peter. A., Navaneethakrishnan. K., Solid State Commun., 120,
(2001), 393.
[10] Hook, John, R., Hall, Henry, Edgar., Solid State Physics,2nd Edition.
[11] Yang, Edwards., (1978),"Fundamental of Semiconductor Devices,"
McGraw-Hill
[1] John. Peter. A., Navaveethankrishnan. K., (2001), Solid State Commun.,
120.393-396.
[2] John. Peter. A., Navaveethankrishnan. K.,(2002), Physica E, 15,153-158.
[3] P. W. Anderson, Phys. Rev. 109 (1958) 1492.
[4] John. Peter. A., Navaveethankrishnan. K., (2002), Solid State
Commun.,122, 655-659.
[5] E.A. Abrahams, P.W. Anderson, D.C. Licciardello, T.V.
[6] Ramakrishnan, Phys. Rev. Lett. 42 (1979) 673.
[7] John. Peter. A., Navaveethankrishnan. K., (2000), phys. State. sol. (b),
220,897.
[8] Bastard. G., Brum. J.A., Ferreira. R., Solid State Phys. (1991), 44, 229.
[9] John. Peter. A., Navaneethakrishnan. K., Solid State Commun., 120,
(2001), 393.
[10] Hook, John, R., Hall, Henry, Edgar., Solid State Physics,2nd Edition.
[11] Yang, Edwards., (1978),"Fundamental of Semiconductor Devices,"
McGraw-Hill
@article{"International Journal of Engineering, Mathematical and Physical Sciences:64765", author = "Sara Sedaghat and Mahmood Barati and Iraj Kazeminezhad", title = "Numerical Calculation of the Ionization Energy of Donors in a Cubic Quantum well and Wire", abstract = "The ionization energy in semiconductor
systems in nano scale was investigated by using effective mass
approximation. By introducing the Hamiltonian of the system, the
variational technique was employed to calculate the ground state and
the ionization energy of a donor at the center and in the case that the
impurities are randomly distributed inside a cubic quantum well. The
numerical results for GaAs/GaAlAs show that the ionization energy
strongly depends on the well width for both cases and it decreases as
the well width increases. The ionization energy of a quantum wire
was also calculated and compared with the results for the well.", keywords = "quantum well, quantum wire, quantum dot, impuritystate", volume = "5", number = "2", pages = "203-3", }