Abstract: Harmonic pollution and low power factor in power
systems caused by power converters have been of great concern. To
overcome these problems several converter topologies using
advanced semiconductor devices and control schemes have been
proposed. This investigation is to identify a low cost, small size,
efficient and reliable ac to dc converter to meet the input performance
index of UPS. The performance of single phase and three phase ac to
dc converter along with various control techniques are studied and
compared. The half bridge converter topology with linear current
control is identified as most suitable. It is simple, energy efficient
because of single switch power loss and transformer-less operation of
UPS. The results are validated practically using a prototype built
using IGBT and analog controller. The performance for both single
and three-phase system is verified. Digital implementation of closed
loop control achieves higher reliability. Its cost largely depends on
chosen bit precision. The minimal bit precision for optimum
converter performance is identified as 16-bit with fixed-point
operation. From the investigation and practical implementation it is
concluded that half bridge ac – dc converter along with digital linear
controller meets the performance index of UPS for single and three
phase systems.
Abstract: In this study three commercial semiconductor devices
were characterized in the laboratory for computed tomography
dosimetry: one photodiode and two phototransistors. It was evaluated
four responses to the irradiation: dose linearity, energy dependence,
angular dependence and loss of sensitivity after X ray exposure. The
results showed that the three devices have proportional response with
the air kerma; the energy dependence displayed for each device
suggests that some calibration factors would be applied for each one;
the angular dependence showed a similar pattern among the three
electronic components. In respect to the fourth parameter analyzed,
one phototransistor has the highest sensitivity however it also showed
the greatest loss of sensitivity with the accumulated dose. The
photodiode was the device with the smaller sensitivity to radiation,
on the other hand, the loss of sensitivity after irradiation is negligible.
Since high accuracy is a desired feature for a dosimeter, the
photodiode can be the most suitable of the three devices for
dosimetry in tomography. The phototransistors can also be used for
CT dosimetry, however it would be necessary a correction factor due
to loss of sensitivity with accumulated dose.
Abstract: Noble metal participation in nanostructured
semiconductor catalysts has drawn much interest because of their
improved properties. Recently, it has been discussed by many
researchers that Ag participation in TiO2, CuO, ZnO semiconductors
showed improved photocatalytic and optical properties. In this
research, Ag/ZnO nanocomposite particles were prepared by
Ultrasonic Spray Pyrolysis(USP) Method. 0.1M silver and zinc
nitrate aqueous solutions were used as precursor solutions. The
Ag:Zn atomic ratio of the solution was selected 1:1. Experiments
were taken place under constant air flow of 400 mL/min at 800°C
furnace temperature. Particles were characterized by X-Ray
Diffraction (XRD), Scanning Electron Microscope (SEM) and
Energy Dispersive Spectroscopy (EDS). The crystallite sizes of Ag
and ZnO in composite particles are 24.6 nm, 19.7 nm respectively.
Although, spherical nanocomposite particles are in a range of 300-
800 nm, these particles are formed by the aggregation of primary
particles which are in a range of 20-60 nm.
Abstract: A novel and efficient approach to realize
fractional-order capacitors is investigated in this paper. Meanwhile, a
new approach which is more efficient for semiconductor
implementation of fractional-order capacitors is proposed. The
feasibility of the approach has been verified with the preliminary
measured results.
Abstract: The InAlGaN alloy has only recently began receiving
serious attention into its growth and application. High quality InGaN
films have led to the development of light emitting diodes (LEDs) and
blue laser diodes (LDs). The quaternary InAlGaN however, represents
a more versatile material since the bandgap and lattice constant can be
independently varied. We report an ultraviolet (UV) quaternary
InAlGaN multi-quantum wells (MQWs) LD study by using the
simulation program of Integrated System Engineering (ISE TCAD).
Advanced physical models of semiconductor properties were used in
order to obtain an optimized structure. The device performance which
is affected by piezoelectric and thermal effects was studied via
drift-diffusion model for carrier transport, optical gain and loss. The
optical performance of the UV LD with different numbers of quantum
wells was numerically investigated. The main peak of the emission
wavelength for double quantum wells (DQWs) was shifted from 358
to 355.8 nm when the forward current was increased. Preliminary
simulated results indicated that better output performance and lower
threshold current could be obtained when the quantum number is four,
with output power of 130 mW and threshold current of 140 mA.
Abstract: We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.
Abstract: Ultrasonic machining (USM) is a non-traditional
machining process being widely used for commercial machining of
brittle and fragile materials such as glass, ceramics and
semiconductor materials. However, USM could be a viable
alternative for machining a tough material such as titanium; and this
aspect needs to be explored through experimental research. This
investigation is focused on exploring the use of ultrasonic machining
for commercial machining of pure titanium (ASTM Grade-I) and
evaluation of tool wear rate (TWR) under controlled experimental
conditions. The optimal settings of parameters are determined
through experiments planned, conducted and analyzed using Taguchi
method. In all, the paper focuses on parametric optimization of
ultrasonic machining of pure titanium metal with TWR as response,
and validation of the optimized value of TWR by conducting
confirmatory experiments.
Abstract: Semiconductor nanomaterials like TiO2 nanoparticles
(TiO2-NPs) approximately less than 100 nm in diameter have become
a new generation of advanced materials due to their novel and
interesting optical, dielectric, and photo-catalytic properties. With the
increasing use of NPs in commerce, to date few studies have
investigated the toxicological and environmental effects of NPs.
Motivated by the importance of TiO2-NPs that may contribute to the
cancer research field especially from the treatment prospective
together with the fractal analysis technique, we have investigated the
effect of TiO2-NPs on colony morphology in the dark condition
using fractal dimension as a key morphological characterization
parameter. The aim of this work is mainly to investigate the cytotoxic
effects of TiO2-NPs in the dark on the growth of human cervical
carcinoma (HeLa) cell colonies from morphological aspect. The in
vitro studies were carried out together with the image processing
technique and fractal analysis. It was found that, these colonies were
abnormal in shape and size. Moreover, the size of the control
colonies appeared to be larger than those of the treated group. The
mean Df +/- SEM of the colonies in untreated cultures was
1.085±0.019, N= 25, while that of the cultures treated with TiO2-NPs
was 1.287±0.045. It was found that the circularity of the control
group (0.401±0.071) is higher than that of the treated group
(0.103±0.042). The same tendency was found in the diameter
parameters which are 1161.30±219.56 μm and 852.28±206.50 μm
for the control and treated group respectively. Possible explanation of
the results was discussed, though more works need to be done in
terms of the for mechanism aspects. Finally, our results indicate that
fractal dimension can serve as a useful feature, by itself or in
conjunction with other shape features, in the classification of cancer
colonies.
Abstract: We fabricated the inverted-staggered etch stopper
structure oxide-based TFT and investigated the characteristics of oxide
TFT under the 400 nm wavelength light illumination. When 400 nm
light was illuminated, the threshold voltage (Vth) decreased and
subthreshold slope (SS) increased at forward sweep, while Vth and SS
were not altered when larger wavelength lights, such as 650 nm, 550
nm and 450 nm, were illuminated. At reverse sweep, the transfer curve
barely changed even under 400 nm light. Our experimental results
support that photo-induced hole carriers are captured by donor-like
interface trap and it caused the decrease of Vth and increase of SS. We
investigated the interface trap density increases proportionally to the
photo-induced hole concentration at active layer.
Abstract: In the micro and nano-technology industry, the
«clean-rooms» dedicated to manufacturing chip, are equipped with
the most sophisticated equipment-tools. There use a large number of
resources in according to strict specifications for an optimum
working and result. The distribution of «utilities» to the production is
assured by teams who use a supervision tool.
The studies show the interest to control the various parameters of
production or/and distribution, in real time, through a reliable and
effective supervision tool. This document looks at a large part of the
functions that the supervisor must assure, with complementary
functionalities to help the diagnosis and simulation that prove very
useful in our case where the supervised installations are complexed
and in constant evolution.
Abstract: We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structure utilizing as a new
building block in different semiconductor devices. The potential distribution through the p-n-junction is calculated and the analytical expressions are derived to compute the depletion region widths. We
show that the widths of space charge layers, surrounding the core, are
the functions of core radius, which is the manifestation of so called classical size effect. The relationship between the depletion layer width and the built-in potential in the asymptotes of infinitely large
core radius transforms to square-root dependence specific for conventional planar p-n-junctions. The explicit equation is derived to
compute the capacitance of radial p-n-junction. The current-voltage behavior is also carefully determined taking into account the “short
base" effects.
Abstract: Three-phase induction machines are today a standard
for industrial electrical drives. Cost, reliability, robustness and maintenance free operation are among the reasons these machines are
replacing dc drive systems. The development of power electronics
and signal processing systems has eliminated one of the greatest
disadvantages of such ac systems, which is the issue of control. With
modern techniques of field oriented vector control, the task of
variable speed control of induction machines is no longer a
disadvantage. The need to increase system performance, particularly
when facing limits on the power ratings of power supplies and
semiconductors, motivates the use of phase number other than three,
In this paper a novel scheme of connecting two, three phase
induction motors in parallel fed by two inverters; viz. VSI and CSI
and their vector control is presented.
Abstract: End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers,DZ-dihexylquarterthiophene (DH-4T) and DZ-dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtained a stable characteristic curve. The field effect mobility, Pwas calculated to be 3.2910-4 cm2/Vs for DH-6T based OTFT; while the DH-4T based OTFT had 1.8810-5 cm2/Vs.KeywordsOrganic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.
Abstract: We present an Electronic Nose (ENose), which is
aimed at identifying the presence of one out of two gases, possibly
detecting the presence of a mixture of the two. Estimation of the
concentrations of the components is also performed for a volatile
organic compound (VOC) constituted by methanol and acetone, for
the ranges 40-400 and 22-220 ppm (parts-per-million), respectively.
Our system contains 8 sensors, 5 of them being gas sensors (of the
class TGS from FIGARO USA, INC., whose sensing element is a tin
dioxide (SnO2) semiconductor), the remaining being a temperature
sensor (LM35 from National Semiconductor Corporation), a
humidity sensor (HIH–3610 from Honeywell), and a pressure sensor
(XFAM from Fujikura Ltd.).
Our integrated hardware–software system uses some machine
learning principles and least square regression principle to identify at
first a new gas sample, or a mixture, and then to estimate the
concentrations. In particular we adopt a training model using the
Support Vector Machine (SVM) approach with linear kernel to teach
the system how discriminate among different gases. Then we apply
another training model using the least square regression, to predict
the concentrations.
The experimental results demonstrate that the proposed
multiclassification and regression scheme is effective in the
identification of the tested VOCs of methanol and acetone with
96.61% correctness. The concentration prediction is obtained with
0.979 and 0.964 correlation coefficient for the predicted versus real
concentrations of methanol and acetone, respectively.
Abstract: The most suitable Semiconductor detector, Cadmium
Zinc Teloraid , has unique properties because of high Atomic number
and wide Brand Gap . It has been tried in this project with different
processes such as Lead , Diffusion , Produce and Recombination ,
effect of Trapping and injection carrier of CdZnTe , to get hole and
then present a complete answer of it . Then we should investigate the
movement of carrier ( Electron – Hole ) by using above answer.
Abstract: In this paper, half bridge DC-DC converters with
transformer isolation presented in the literature are analyzed for highcurrent
and low-voltage applications under the same operation
conditions, and compared in terms of losses and efficiency. The
conventional and improved half-bridge DC-DC converters are
simulated, and current and voltage waveforms are obtained for input
voltage Vdc=500V, output current IO=450A, output voltage VO=38V
and switching frequency fS=20kHz. IGBTs are used as power
semiconductor switches. The power losses of the semiconductor
devices are calculated from current and voltage waveforms. From
simulation results, it is seen that the capacitor switched half bridge
converter has the best efficiency value, and can be preferred at high
power and high frequency applications.
Abstract: Quaternary InxAlyGa1-x-yN semiconductors have
attracted much research interest because the use of this quaternary
offer the great flexibility in tailoring their band gap profile while
maintaining their lattice-matching and structural integrity. The
structural and optical properties of InxAlyGa1-x-yN alloys grown by
molecular beam epitaxy (MBE) is presented. The structural quality of
InxAlyGa1-x-yN layers was characterized using high-resolution X-ray
diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN
films had wurtzite structure and without phase separation. As the In
composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN
peak gradually decreases, indicating the increase in the lattice constant
c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with
increasing In composition from 0 to 0.04, that could indicate the
decrease of quality of the samples due to point defects leading to
non-uniformity of the epilayers. UV-VIS spectroscopy have been used
to study the energy band gap of InxAlyGa1-x-yN. As the indium (In)
compositions increases, the energy band gap decreases. However, for
InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a
sudden increase in energy. This is probably due to local alloy
compositional fluctuations in the epilayer. The bowing parameter
which appears also to be very sensitive on In content is investigated
and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From
photoluminescence (PL) measurement, green luminescence (GL)
appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm
and it become more pronounced as the In composition (x) increased,
which is believed cause by gallium vacancies and related to isolated
native defects.
Abstract: The process of wafer fabrication is arguably the most
technologically complex and capital intensive stage in semiconductor
manufacturing. This large-scale discrete-event process is highly reentrant,
and involves hundreds of machines, restrictions, and
processing steps. Therefore, production control of wafer fabrication
facilities (fab), specifically scheduling, is one of the most challenging
problems that this industry faces. Dispatching rules have been
extensively applied to the scheduling problems in semiconductor
manufacturing. Moreover, lot release policies are commonly used in
this manufacturing setting to further improve the performance of such
systems and reduce its inherent variability. In this work, simulation is
used in the scheduling of re-entrant flow shop manufacturing systems
with an application in semiconductor wafer fabrication; where, a
simulation model has been developed for the Intel Five-Machine Six
Step Mini-Fab using the ExtendTM simulation environment. The
Mini-Fab has been selected as it captures the challenges involved in
scheduling the highly re-entrant semiconductor manufacturing lines.
A number of scenarios have been developed and have been used to
evaluate the effect of different dispatching rules and lot release
policies on the selected performance measures. Results of simulation
showed that the performance of the Mini-Fab can be drastically
improved using a combination of dispatching rules and lot release
policy.
Abstract: Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (VTH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.
Abstract: This research presents the development of simulation
modeling for WIP management in semiconductor fabrication.
Manufacturing simulation modeling is needed for productivity
optimization analysis due to the complex process flows involved
more than 35 percent re-entrance processing steps more than 15 times
at same equipment. Furthermore, semiconductor fabrication required
to produce high product mixed with total processing steps varies from
300 to 800 steps and cycle time between 30 to 70 days. Besides the
complexity, expansive wafer cost that potentially impact the
company profits margin once miss due date is another motivation to
explore options to experiment any analysis using simulation
modeling. In this paper, the simulation model is developed using
existing commercial software platform AutoSched AP, with
customized integration with Manufacturing Execution Systems
(MES) and Advanced Productivity Family (APF) for data collections
used to configure the model parameters and data source. Model
parameters such as processing steps cycle time, equipment
performance, handling time, efficiency of operator are collected
through this customization. Once the parameters are validated, few
customizations are made to ensure the prior model is executed. The
accuracy for the simulation model is validated with the actual output
per day for all equipments. The comparison analysis from result of
the simulation model compared to actual for achieved 95 percent
accuracy for 30 days. This model later was used to perform various
what if analysis to understand impacts on cycle time and overall
output. By using this simulation model, complex manufacturing
environment like semiconductor fabrication (fab) now have
alternative source of validation for any new requirements impact
analysis.