Evaluation of Power Factor Corrected AC - DC Converters and Controllers to meet UPS Performance Index

Harmonic pollution and low power factor in power systems caused by power converters have been of great concern. To overcome these problems several converter topologies using advanced semiconductor devices and control schemes have been proposed. This investigation is to identify a low cost, small size, efficient and reliable ac to dc converter to meet the input performance index of UPS. The performance of single phase and three phase ac to dc converter along with various control techniques are studied and compared. The half bridge converter topology with linear current control is identified as most suitable. It is simple, energy efficient because of single switch power loss and transformer-less operation of UPS. The results are validated practically using a prototype built using IGBT and analog controller. The performance for both single and three-phase system is verified. Digital implementation of closed loop control achieves higher reliability. Its cost largely depends on chosen bit precision. The minimal bit precision for optimum converter performance is identified as 16-bit with fixed-point operation. From the investigation and practical implementation it is concluded that half bridge ac – dc converter along with digital linear controller meets the performance index of UPS for single and three phase systems.

Loss Analysis of Half Bridge DC-DC Converters in High-Current and Low-Voltage Applications

In this paper, half bridge DC-DC converters with transformer isolation presented in the literature are analyzed for highcurrent and low-voltage applications under the same operation conditions, and compared in terms of losses and efficiency. The conventional and improved half-bridge DC-DC converters are simulated, and current and voltage waveforms are obtained for input voltage Vdc=500V, output current IO=450A, output voltage VO=38V and switching frequency fS=20kHz. IGBTs are used as power semiconductor switches. The power losses of the semiconductor devices are calculated from current and voltage waveforms. From simulation results, it is seen that the capacitor switched half bridge converter has the best efficiency value, and can be preferred at high power and high frequency applications.

Energy Recovery Soft Switching Improved Efficiency Half Bridge Inverter for Electronic Ballast Applications

An improved topology of a voltage-fed quasi-resonant soft switching LCrCdc series-parallel half bridge inverter with a constant-frequency for electronic ballast applications is proposed in this paper. This new topology introduces a low-cost solution to reduce switching losses and circuit rating to achieve high-efficiency ballast. Switching losses effect on ballast efficiency is discussed through experimental point of view. In this discussion, an improved topology in which accomplishes soft switching operation over a wide power regulation range is proposed. The proposed structure uses reverse recovery diode to provide better operation for the ballast system. A symmetrical pulse wide modulation (PWM) control scheme is implemented to regulate a wide range of out-put power. Simulation results are kindly verified with the experimental measurements obtained by ballast-lamp laboratory prototype. Different load conditions are provided in order to clarify the performance of the proposed converter.

Implementation and Simulation of Half-Bridge Series Resonant Inverter in Zero Voltage Switching

In switch mode power inverters, small sized inverters can be obtained by increasing the switching frequency. Switching frequency increment causes high driver losses. Also, high dt di and dt dv produced by the switching action creates high Electromagnetic Interference (EMI) and Radio Frequency Interference (RFI). In this paper, a series half bridge series resonant inverter circuit is simulated and evaluated practically to demonstrate the turn-on and turn-off conditions during zero or close to zero voltage switching. Also, the reverse recovery current effects of the body diode of the MOSFETs were investigated by operating above and below resonant frequency.