Implementation and Simulation of Half-Bridge Series Resonant Inverter in Zero Voltage Switching
In switch mode power inverters, small sized inverters
can be obtained by increasing the switching frequency. Switching
frequency increment causes high driver losses. Also, high dt
di
and
dt
dv
produced by the switching action creates high Electromagnetic
Interference (EMI) and Radio Frequency Interference (RFI). In this
paper, a series half bridge series resonant inverter circuit is simulated
and evaluated practically to demonstrate the turn-on and turn-off
conditions during zero or close to zero voltage switching. Also, the
reverse recovery current effects of the body diode of the MOSFETs
were investigated by operating above and below resonant frequency.
[1] N. Mohan, T. M. Undeland, W.P. Robbins, "Power Electronics:
Converters, Application, and Design", John Willey & Sons, 1989,
pp.154-157.
[2] R. S. Zhang, "High-Frequency Resonant Gate Driver Circuit for
MOSGated Power Switches," U.S. Patent 6441673B1, Aug. 27, 2002.
[3] R. L. Steigerwald, "Lossless Gate Driver Circuit for a High Frequency
Converter," U.S. Patent 5010261, Apr. 23, 1991.
[4] A. Fiel and T. Wu, "MOSFET Failure Modes in the Zero-Voltage-
Switched Full-Bridge Switching Mode Power Supply Applications", In
proceedings of Applied Power Electronics Conference and Exposition,
APEC 2001. Sixteenth Annual IEEE, vol.2, Anaheim, CA, USA,
pp.1247 - 1252, 2001
[5] L. Saro, R. Redl, K. Dierberger, "High-Voltage MOSFET Behavior in
Soft-Switching Converter: Analysis and Reliability Improvements," In
proceedings of International Tel-communication Conference, San
Francisco, 1998, pp 30-40
[6] D. C. Hamill., "Class DE Inverters and Rectifiers for DC-DC
Conversion", In proceedings of Power Electronics Specialists Conf.,
Baveno, Italy, June 1996
[7] M. Milan Jovanovic, A. T. Wojciech,C. L. Fred , "Zero-Voltage-
Switching Technique in High-Frequency Off-Line Converters", IEEE
Proceedings of Applied Power Electronics Conference, pp. 23-32, 1988.
[8] L. Josef, H. Schlangenotto,U. Scheuermann, R. D. Doncker
,"Semiconductor Power Devices, Physics, Characteristics, Reliability",
Springer-Verlag Berlin Heidelberg ,2011.
[9] I.D. Jitaru, "A new high frequency, zero-voltage switched, PWM
converter", In proceedings of Applied Power Electronics Conference
and Exposition, 1992. APEC '92. Conference Proceedings 1992, Seventh
Annual, Page(s): 657 - 664, 1992.
[10] P. Singh, Power MOSFET Failure Mechanisms, In proceeding of 26th
Annual International Telecommunications Energy Conference, 2004.
INTELEC 2004, Chicago, Illinois USA, pp. 499 - 502.
[11] L. Rossetto, G. Spiazzio, Series Resonant Converter with wide load
range, In proceeding of IEEE Industry Applications Conference, 1998,
St. Louis, MO , USA, 12-15 Oct 1998, vol.:2, pp. 1326 - 1331 .
[12] M. K. Kazimierczuk, "Pulse-width Modulated DC-DC Power
Converters", John Wiley and Sons, Ltd, 2008, ch. 16.
[13] B. J. Baliga, "Fundamentals of Power Semiconductor Devices",
Springer Science+Business Media, LLC, 2008, ch. 6.
[14] www.fairchildsemi.com, Application note AN-6076 Design and
Application Guide of Bootstrap Circuit for High-Voltage Gate Drive IC,
2008
[15] Tektronics, P6022 Current Probe Instruction Manual, Tektronix, Inc.,
2004
[16] X. Wei, H. Sekiya,S. Kuroiwa, T. Suetsugu, M. K. Kazimierczuk,
"Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and
Nonlinear Drain-to-Source Capacitances", IEEE Transactions on
Circuits and Systems I: Regular Papers, Vol. 58 , pp. 2556 - 2565,
2011.
[17] M. Orabi, A. Abou-Alfotouh, A. Lotfi, "Coss Capacitance Contribution
to Synchronous Buck Converter Losses" In proceedings of Power
Electronics Specialists Conference, PESC 2008, Rhodes, Greece, pp.
666 - 672, 2008.
[18] Z. Zhang , W. Eberle, Z. Yang, Y. Liu, P. C. Sen, "Optimal Design of
Resonant Gate Driver for Buck Converter Based on a New Analytical
Loss Model" , IEEE Transactions on Power Electronics, vol.23, no.2,
pp.653-666 ,2008.
[19] M. P. Theodoridis, S. V. Mollov, "Robust MOSFET Driver for RF ,
class-D Inverters" , IEEE Transactions on Industrial Electronics,
vol.55,no.2, pp.731-740 ,2008 .
[20] S. Xu X. Liu W. Sun, "Modelling of power metal-oxide semiconductor
field-effect transistor for the analysis of switching characteristics in halfbridge
converters", IET Circuits, Devices & Systems, vol.4, pp. 327 -
336, 2010.
[1] N. Mohan, T. M. Undeland, W.P. Robbins, "Power Electronics:
Converters, Application, and Design", John Willey & Sons, 1989,
pp.154-157.
[2] R. S. Zhang, "High-Frequency Resonant Gate Driver Circuit for
MOSGated Power Switches," U.S. Patent 6441673B1, Aug. 27, 2002.
[3] R. L. Steigerwald, "Lossless Gate Driver Circuit for a High Frequency
Converter," U.S. Patent 5010261, Apr. 23, 1991.
[4] A. Fiel and T. Wu, "MOSFET Failure Modes in the Zero-Voltage-
Switched Full-Bridge Switching Mode Power Supply Applications", In
proceedings of Applied Power Electronics Conference and Exposition,
APEC 2001. Sixteenth Annual IEEE, vol.2, Anaheim, CA, USA,
pp.1247 - 1252, 2001
[5] L. Saro, R. Redl, K. Dierberger, "High-Voltage MOSFET Behavior in
Soft-Switching Converter: Analysis and Reliability Improvements," In
proceedings of International Tel-communication Conference, San
Francisco, 1998, pp 30-40
[6] D. C. Hamill., "Class DE Inverters and Rectifiers for DC-DC
Conversion", In proceedings of Power Electronics Specialists Conf.,
Baveno, Italy, June 1996
[7] M. Milan Jovanovic, A. T. Wojciech,C. L. Fred , "Zero-Voltage-
Switching Technique in High-Frequency Off-Line Converters", IEEE
Proceedings of Applied Power Electronics Conference, pp. 23-32, 1988.
[8] L. Josef, H. Schlangenotto,U. Scheuermann, R. D. Doncker
,"Semiconductor Power Devices, Physics, Characteristics, Reliability",
Springer-Verlag Berlin Heidelberg ,2011.
[9] I.D. Jitaru, "A new high frequency, zero-voltage switched, PWM
converter", In proceedings of Applied Power Electronics Conference
and Exposition, 1992. APEC '92. Conference Proceedings 1992, Seventh
Annual, Page(s): 657 - 664, 1992.
[10] P. Singh, Power MOSFET Failure Mechanisms, In proceeding of 26th
Annual International Telecommunications Energy Conference, 2004.
INTELEC 2004, Chicago, Illinois USA, pp. 499 - 502.
[11] L. Rossetto, G. Spiazzio, Series Resonant Converter with wide load
range, In proceeding of IEEE Industry Applications Conference, 1998,
St. Louis, MO , USA, 12-15 Oct 1998, vol.:2, pp. 1326 - 1331 .
[12] M. K. Kazimierczuk, "Pulse-width Modulated DC-DC Power
Converters", John Wiley and Sons, Ltd, 2008, ch. 16.
[13] B. J. Baliga, "Fundamentals of Power Semiconductor Devices",
Springer Science+Business Media, LLC, 2008, ch. 6.
[14] www.fairchildsemi.com, Application note AN-6076 Design and
Application Guide of Bootstrap Circuit for High-Voltage Gate Drive IC,
2008
[15] Tektronics, P6022 Current Probe Instruction Manual, Tektronix, Inc.,
2004
[16] X. Wei, H. Sekiya,S. Kuroiwa, T. Suetsugu, M. K. Kazimierczuk,
"Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and
Nonlinear Drain-to-Source Capacitances", IEEE Transactions on
Circuits and Systems I: Regular Papers, Vol. 58 , pp. 2556 - 2565,
2011.
[17] M. Orabi, A. Abou-Alfotouh, A. Lotfi, "Coss Capacitance Contribution
to Synchronous Buck Converter Losses" In proceedings of Power
Electronics Specialists Conference, PESC 2008, Rhodes, Greece, pp.
666 - 672, 2008.
[18] Z. Zhang , W. Eberle, Z. Yang, Y. Liu, P. C. Sen, "Optimal Design of
Resonant Gate Driver for Buck Converter Based on a New Analytical
Loss Model" , IEEE Transactions on Power Electronics, vol.23, no.2,
pp.653-666 ,2008.
[19] M. P. Theodoridis, S. V. Mollov, "Robust MOSFET Driver for RF ,
class-D Inverters" , IEEE Transactions on Industrial Electronics,
vol.55,no.2, pp.731-740 ,2008 .
[20] S. Xu X. Liu W. Sun, "Modelling of power metal-oxide semiconductor
field-effect transistor for the analysis of switching characteristics in halfbridge
converters", IET Circuits, Devices & Systems, vol.4, pp. 327 -
336, 2010.
@article{"International Journal of Electrical, Electronic and Communication Sciences:51342", author = "Buket Turan Azizoğlu", title = "Implementation and Simulation of Half-Bridge Series Resonant Inverter in Zero Voltage Switching", abstract = "In switch mode power inverters, small sized inverters
can be obtained by increasing the switching frequency. Switching
frequency increment causes high driver losses. Also, high dt
di
and
dt
dv
produced by the switching action creates high Electromagnetic
Interference (EMI) and Radio Frequency Interference (RFI). In this
paper, a series half bridge series resonant inverter circuit is simulated
and evaluated practically to demonstrate the turn-on and turn-off
conditions during zero or close to zero voltage switching. Also, the
reverse recovery current effects of the body diode of the MOSFETs
were investigated by operating above and below resonant frequency.", keywords = "Driver losses, Half Bridge series resonant inverter,Zero Voltage Switching", volume = "5", number = "11", pages = "1417-5", }
