Abstract: We fabricated the inverted-staggered etch stopper
structure oxide-based TFT and investigated the characteristics of oxide
TFT under the 400 nm wavelength light illumination. When 400 nm
light was illuminated, the threshold voltage (Vth) decreased and
subthreshold slope (SS) increased at forward sweep, while Vth and SS
were not altered when larger wavelength lights, such as 650 nm, 550
nm and 450 nm, were illuminated. At reverse sweep, the transfer curve
barely changed even under 400 nm light. Our experimental results
support that photo-induced hole carriers are captured by donor-like
interface trap and it caused the decrease of Vth and increase of SS. We
investigated the interface trap density increases proportionally to the
photo-induced hole concentration at active layer.
Abstract: We have fabricated a-IGZO TFT and investigated the
stability under positive DC and AC bias stress. The threshold voltage
of a-IGZO TFT shifts positively under those biases, and that reduces
on-current. For this reason, conventional shift-register circuit
employing TFTs which stressed by positive bias will be unstable, may
do not work properly. We have designed a new 6-transistor
shift-register, which has less transistors than prior circuits. The TFTs
of the proposed shift-register are not suffering from positive DC or AC
stress, mainly kept unbiased. Despite the compact design, the stable
output signal was verified through the SPICE simulation even under
RC delay of clock signal.