The Light Response Characteristics of Oxide-Based Thin Film Transistors
We fabricated the inverted-staggered etch stopper
structure oxide-based TFT and investigated the characteristics of oxide
TFT under the 400 nm wavelength light illumination. When 400 nm
light was illuminated, the threshold voltage (Vth) decreased and
subthreshold slope (SS) increased at forward sweep, while Vth and SS
were not altered when larger wavelength lights, such as 650 nm, 550
nm and 450 nm, were illuminated. At reverse sweep, the transfer curve
barely changed even under 400 nm light. Our experimental results
support that photo-induced hole carriers are captured by donor-like
interface trap and it caused the decrease of Vth and increase of SS. We
investigated the interface trap density increases proportionally to the
photo-induced hole concentration at active layer.
[1] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono,
"Thin film transistor fabricated in single-crystalline transparent oxide
semiconductor", Science, vol. 300, no. 5623, pp. 1269-1272, May 2003.
[2] K. Nomura et al.,"Room-temperature fabrication of transparent flexible
thin-film transistors using amorphous oxide semiconductors", Nature, vol.
432, no. 7016, pp. 488-492, Nov. 2004.
[3] E. Fortunato et al., "Fully transparent ZnO thin-film transistor produced at
room temperature", Adv. Mater., vol. 17, no. 5, pp. 590-594, Mar. 2005.
[4] H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T.
Kamiya, and H. Hosono, "High-mobility thin-film transistor with
amorphous InGaZnO4 channel fabricated by room temperature
RF-magnetron sputtering", Appl. Phys. Lett., vol. 89, no. 11, pp. 112
123-1-112123-3, Sep. 2006.
[5] A. Suresh et al., "Transparent, high mobility InGaZnO thin films
deposited by PLD", Thin Solid Films, vol. 516, no. 7, pp. 1326-1329,
2008.
[6] P. Barquinha, L. Pereira, G. Goncalves, R. Martins, and E. Fortunato,
"Toward high-performance amorphous GIZO TFTs," J. Electrochem.
Soc., vol. 156, no. 3, pp. H161-H168, 2009.
[7] J. Y. Kwon et al., "Bottom-Gate Gallium Indium Zinc Oxide Thin-Film
Transistor Array for High-Resolution AMOLED Display", vol. 29, no. 12,
pp. 1309-1311, Dec. 2008.
[8] J. S. Park et al., "Influence of Illumination on the Negative-Bias Stability
of Transparent Hafnium-Indium-Zinc Oxide Thin-Film Transistors",
IEEE Electron Device Letters, vol. 31, no. 5, May 2010.
[9] K. Takechi et al., "Comparison of Ultraviolet Photo-
Field Effects between Hydrogenated Amorphous Silicon and Amorphous
InGa ZnO4 Thin-Film Transistors", Jpn. J. Appl. Phys., vol. 48, pp.
010203-1-010203-3, Jan. 2009.
[10] M. Kimura et al., "Mechanism analysis of photoleakage current in ZnO
thin-film transistors using device simulation", Appl. Phys. Lett., vol.97,
no. 16, pp. 163503-1-163503-3, Oct. 2010.
[11] T.-C. Fung et al., "Photofield-Effect in Amorphous In-Ga-Zn-O
(a-IGZO) Thin-Film Transistors", Journal of Information Display, vol.9,
no.4, pp. 21-29, 2008.
[12] J. K. Jeong et al., "High performance thin film transistors with
cosputtered amorphous indium gallium zinc oxide channel", Appl. Phys.
Lett., vol. 91, no. 91, pp. 113505-1-113505-3, Sep. 2007.
[1] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono,
"Thin film transistor fabricated in single-crystalline transparent oxide
semiconductor", Science, vol. 300, no. 5623, pp. 1269-1272, May 2003.
[2] K. Nomura et al.,"Room-temperature fabrication of transparent flexible
thin-film transistors using amorphous oxide semiconductors", Nature, vol.
432, no. 7016, pp. 488-492, Nov. 2004.
[3] E. Fortunato et al., "Fully transparent ZnO thin-film transistor produced at
room temperature", Adv. Mater., vol. 17, no. 5, pp. 590-594, Mar. 2005.
[4] H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T.
Kamiya, and H. Hosono, "High-mobility thin-film transistor with
amorphous InGaZnO4 channel fabricated by room temperature
RF-magnetron sputtering", Appl. Phys. Lett., vol. 89, no. 11, pp. 112
123-1-112123-3, Sep. 2006.
[5] A. Suresh et al., "Transparent, high mobility InGaZnO thin films
deposited by PLD", Thin Solid Films, vol. 516, no. 7, pp. 1326-1329,
2008.
[6] P. Barquinha, L. Pereira, G. Goncalves, R. Martins, and E. Fortunato,
"Toward high-performance amorphous GIZO TFTs," J. Electrochem.
Soc., vol. 156, no. 3, pp. H161-H168, 2009.
[7] J. Y. Kwon et al., "Bottom-Gate Gallium Indium Zinc Oxide Thin-Film
Transistor Array for High-Resolution AMOLED Display", vol. 29, no. 12,
pp. 1309-1311, Dec. 2008.
[8] J. S. Park et al., "Influence of Illumination on the Negative-Bias Stability
of Transparent Hafnium-Indium-Zinc Oxide Thin-Film Transistors",
IEEE Electron Device Letters, vol. 31, no. 5, May 2010.
[9] K. Takechi et al., "Comparison of Ultraviolet Photo-
Field Effects between Hydrogenated Amorphous Silicon and Amorphous
InGa ZnO4 Thin-Film Transistors", Jpn. J. Appl. Phys., vol. 48, pp.
010203-1-010203-3, Jan. 2009.
[10] M. Kimura et al., "Mechanism analysis of photoleakage current in ZnO
thin-film transistors using device simulation", Appl. Phys. Lett., vol.97,
no. 16, pp. 163503-1-163503-3, Oct. 2010.
[11] T.-C. Fung et al., "Photofield-Effect in Amorphous In-Ga-Zn-O
(a-IGZO) Thin-Film Transistors", Journal of Information Display, vol.9,
no.4, pp. 21-29, 2008.
[12] J. K. Jeong et al., "High performance thin film transistors with
cosputtered amorphous indium gallium zinc oxide channel", Appl. Phys.
Lett., vol. 91, no. 91, pp. 113505-1-113505-3, Sep. 2007.
@article{"International Journal of Electrical, Electronic and Communication Sciences:60599", author = "Soo-Yeon Lee and Seung-Min Song and Moon-Kyu Song and Woo-Geun Lee and Kap-Soo Yoon and Jang-Yeon Kwon and Min-Koo Han", title = "The Light Response Characteristics of Oxide-Based Thin Film Transistors", abstract = "We fabricated the inverted-staggered etch stopper
structure oxide-based TFT and investigated the characteristics of oxide
TFT under the 400 nm wavelength light illumination. When 400 nm
light was illuminated, the threshold voltage (Vth) decreased and
subthreshold slope (SS) increased at forward sweep, while Vth and SS
were not altered when larger wavelength lights, such as 650 nm, 550
nm and 450 nm, were illuminated. At reverse sweep, the transfer curve
barely changed even under 400 nm light. Our experimental results
support that photo-induced hole carriers are captured by donor-like
interface trap and it caused the decrease of Vth and increase of SS. We
investigated the interface trap density increases proportionally to the
photo-induced hole concentration at active layer.", keywords = "thin film transistor, oxide-based semiconductor, lightresponse", volume = "5", number = "4", pages = "547-3", }