Abstract: Herein, the organic semiconductor methyl orange
(MO), is investigated for the first time for its electronic applications.
For this purpose, Al/MO/n-Si heterojunction is fabricated through
economical cheap and simple “drop casting” technique. The currentvoltage
(I-V) measurements of the device are made at room
temperature under dark conditions. The I-V characteristics of
Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior
that confirms the formation of diode. The diode parameters such as
rectification ratio (RR), turn on voltage (Vturn on), reverse saturation
current (I0), ideality factor (n), barrier height ( b
f ), series resistance
(Rs) and shunt resistance (Rsh) are determined from I-V curves using
Schottky equations. These values of these parameters are also
extracted and verified by applying Cheung’s functions. The
conduction mechanisms are explained from the forward bias I-V
characteristics using the power law.
Abstract: The effect of the number of quantum dot (QD) layers
on the saturated gain of doped QD semiconductor optical amplifiers
(SOAs) has been studied using multi-population coupled rate
equations. The developed model takes into account the effect of
carrier coupling between adjacent layers. It has been found that
increasing the number of QD layers (K) increases the unsaturated
optical gain for K
Abstract: Rotating stages in semiconductor, display industry and many other fields require challenging accuracy to perform their functions properly. Especially, Axis of rotation error on rotary system is significant; such as the spindle error motion of the aligner, wire bonder and inspector machine which result in the poor state of manufactured goods. To evaluate and improve the performance of such precision rotary stage, unessential movements on the other 5 degrees of freedom of the rotary stage must be measured and analyzed. In this paper, we have measured the three translations and two tilt motions of a rotating stage with high precision capacitive sensors. To obtain the radial error motion from T.I.R (Total Indicated Reading) of radial direction, we have used Donaldson's reversal technique. And the axial components of the spindle tilt error motion can be obtained accurately from the axial direction outputs of sensors by Estler face motion reversal technique. Further more we have defined and measured the sensitivity of positioning error to the five error motions.
Abstract: The present work deals with the calculation of
transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in
degenerate case. Due to their energy-band structure, this material
becomes degenerate at moderate doping densities, which are around
1015 cm-3, so that the usual Maxwell-Boltzmann approximation is
inaccurate in the determination of transport parameters. This problem
is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic
behavior of the bands may be approximated by the Kane model. The
Monte Carlo (MC) simulation is used here to determinate transport
parameters: drift velocity, mean energy and drift mobility versus
electric field and the doped densities. The obtained results are in
good agreement with those extracted from literature.
Abstract: We report here structural, mechanical and I-V
characteristics of Zn1-xMxO ceramic samples with various x and M.
It is found that the considered dopants does not influence the wellknown
peaks related to wurtzite structure of ZnO ceramics, while the
shape and size of grains are clearly affected. Average crystalline
diameters, deduced from XRD are between 42 nm and 54 nm, which
are 70 times lower than those obtained from SEM micrographs.
Interestingly, the potential barrier could be formed by adding Cu up
to 0.20, and it is completely deformed by 0.025 Ni additions. The
breakdown field could be enhanced up to 4138 V/cm by 0.025 Cu
additions, followed by a decrease with further increase of Cu . On
the other hand a gradual decrease in VHN is reported for both
dopants and their values are higher in Ni samples as compared to Cu
samples. The electrical conductivity is generally improved by Ni,
while addition of Cu improved it only in the over doped region (≥
0.10). These results are discussed in terms of the difference of
valency and ferromagnetic ordering for both dopants as compared to
undoped sample.
Abstract: In recent times there has been a growing interest in the
development of quasi-two-dimensional niobium pentoxide (Nb2O5)
as a semiconductor for the potential electronic applications such as
capacitors, filtration, dye-sensitised solar cells and gas sensing
platforms. Therefore once the purpose is established, Nb2O5 can be
prepared in a number of nano- and sub-micron-structural
morphologies that include rods, wires, belts and tubes. In this study
films of Nb2O5 were prepared on gold plated silicon substrate using
spin-coating technique and subsequently by mechanical exfoliation.
The reason this method was employed was to achieve layers of less
than 15nm in thickness. The sintering temperature of the specimen
was 800oC. The morphology and structural characteristics of the
films were analyzed by Atomic Force Microscopy (AFM), Raman
Spectroscopy, X-ray Photoelectron Spectroscopy (XPS).
Abstract: Developing a supply chain management (SCM) system is costly, but important. However, because of its complicated nature, not many of such projects are considered successful. Few research publications directly relate to key success factors (KSFs) for implementing a SCM system. Motivated by the above, this research proposes a hierarchy of KSFs for SCM system implementation in the semiconductor industry by using a two-step approach. First, the literature review indicates the initial hierarchy. The second step includes a focus group approach to finalize the proposed KSF hierarchy by extracting valuable experiences from executives and managers that actively participated in a project, which successfully establish a seamless SCM integration between the world's largest semiconductor foundry manufacturing company and the world's largest assembly and testing company. Future project executives may refer the resulting KSF hierarchy as a checklist for SCM system implementation in semiconductor or related industries.
Abstract: III-nitride quaternary InxAlyGa1-x-yN alloys have experienced considerable interest as potential materials for optoelectronic applications. Despite these interesting applications and the extensive efforts to understand their fundamental properties, research on its fundamental surface property, i.e., surface phonon polariton (SPP) has not yet been reported. In fact, the SPP properties have been shown to provide application for some photonic devices. Hence, there is an absolute need for thorough studies on the SPP properties of this material. In this work, theoretical study on the SPP modes in InAlGaN quaternary alloys are reported. Attention is focus on the wurtzite (α-) structure InxAlyGa1-x-yN semi-crystal with different In composition, x ranging from 0 to 0.10 and constant Al composition, y = 0.06. The SPP modes are obtained through the theoretical simulation by means of anisotropy model. The characteristics of SP dispersion curves are discussed. Accessible results in terms of the experimental point of view are also given. Finally, the results revealed that the SPP mode of α-InxAlyGa1-x-yN semiconductors exhibits two-mode behavior.
Abstract: By analyzing the sources of energy and power
loss in PWM (Pulse Width Modulation) controlled drivers of
water electrolysis cells, it is possible to reduce the power
dissipation and enhance the efficiency of such hydrogen
production units. A PWM controlled power driver is based on
a semiconductor switching element where its power
dissipation might be a remarkable fraction of the total power
demand of an electrolysis system. Power dissipation in a
semiconductor switching element is related to many different
parameters which could be fitted into two main categories:
switching losses and conduction losses. Conduction losses are
directly related to the built, structure and capabilities of a
switching device itself and indeed the conditions in which the
element is handling the switching application such as voltage,
current, temperature and of course the fabrication technology.
On the other hand, switching losses have some other
influencing variables other than the mentioned such as control
system, switching method and power electronics circuitry of
the PWM power driver. By analyzings the characteristics of
recently developed power switching transistors from different
families of Bipolar Junction Transistors (BJT), Metal Oxide
Semiconductor Field Effect Transistors (MOSFET) and
Insulated Gate Bipolar Transistors (IGBT), some
recommendations are made in this paper which are able to
lead to achieve higher hydrogen production efficiency by
utilizing PWM controlled water electrolysis cells.
Abstract: In the semiconductor manufacturing process, large
amounts of data are collected from various sensors of multiple
facilities. The collected data from sensors have several different characteristics
due to variables such as types of products, former processes
and recipes. In general, Statistical Quality Control (SQC) methods
assume the normality of the data to detect out-of-control states of
processes. Although the collected data have different characteristics,
using the data as inputs of SQC will increase variations of data,
require wide control limits, and decrease performance to detect outof-
control. Therefore, it is necessary to separate similar data groups
from mixed data for more accurate process control. In the paper,
we propose a regression tree using split algorithm based on Pearson
distribution to handle non-normal distribution in parametric method.
The regression tree finds similar properties of data from different
variables. The experiments using real semiconductor manufacturing
process data show improved performance in fault detecting ability.
Abstract: Semiconductor materials with coatings have a wide range of applications in MEMS and NEMS. This work uses transfermatrix method for calculating the radiative properties. Dopped silicon is used and the coherent formulation is applied. The Drude model for the optical constants of doped silicon is employed. Results showed that for the visible wavelengths, more emittance occurs in greater concentrations and the reflectance decreases as the concentration increases. In these wavelengths, transmittance is negligible. Donars and acceptors act similar in visible wavelengths. The effect of wave interference can be understood by plotting the spectral properties such as reflectance or transmittance of a thin dielectric film versus the film thickness and analyzing the oscillations of properties due to constructive and destructive interferences. But this effect has not been shown at visible wavelengths. At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon, and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds1018cm-3 .
Abstract: Average current analysis checking the impact of
current flow is very important to guarantee the reliability of
semiconductor systems. As semiconductor process technologies
improve, the coupling capacitance often become bigger than self
capacitances. In this paper, we propose an analytic technique for
analyzing average current on interconnects in multi-conductor
structures. The proposed technique has shown to yield the acceptable
errors compared to HSPICE results while providing computational
efficiency.
Abstract: C-control chart assumes that process nonconformities follow a Poisson distribution. In actuality, however, this Poisson distribution does not always occur. A process control for semiconductor based on a Poisson distribution always underestimates the true average amount of nonconformities and the process variance. Quality is described more accurately if a compound Poisson process is used for process control at this time. A cumulative sum (CUSUM) control chart is much better than a C control chart when a small shift will be detected. This study calculates one-sided CUSUM ARLs using a Markov chain approach to construct a CUSUM control chart with an underlying Poisson-Gamma compound distribution for the failure mechanism. Moreover, an actual data set from a wafer plant is used to demonstrate the operation of the proposed model. The results show that a CUSUM control chart realizes significantly better performance than EWMA.
Abstract: This paper presents Cost per Equivalent Wafer Out, which we find useful in wafer fab operational cost monitoring and controlling. It removes the loading and product mix effect in the cost variance analysis. The operation heads, therefore, could immediately focus on identifying areas for cost improvement. Without this, they would have to measure the impact of the loading variance and product mix variance between actual and budgeted prior to make any decision on cost improvement. Cost per Equivalent Wafer Out, thereby, increases efficiency in wafer fab operational cost monitoring and controlling.