Abstract: The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.
Abstract: In this paper, half bridge DC-DC converters with
transformer isolation presented in the literature are analyzed for highcurrent
and low-voltage applications under the same operation
conditions, and compared in terms of losses and efficiency. The
conventional and improved half-bridge DC-DC converters are
simulated, and current and voltage waveforms are obtained for input
voltage Vdc=500V, output current IO=450A, output voltage VO=38V
and switching frequency fS=20kHz. IGBTs are used as power
semiconductor switches. The power losses of the semiconductor
devices are calculated from current and voltage waveforms. From
simulation results, it is seen that the capacitor switched half bridge
converter has the best efficiency value, and can be preferred at high
power and high frequency applications.
Abstract: Multi-level voltage source inverters offer several
advantages such as; derivation of a refined output voltage with
reduced total harmonic distortion (THD), reduction of voltage ratings
of the power semiconductor switching devices and also the reduced
electro-magnetic-interference problems etc. In this paper, new
carrier-overlapped phase-disposition or sub-harmonic sinusoidal
pulse width modulation (CO-PD-SPWM) and also the carrieroverlapped
phase-disposition space vector modulation (CO-PDSVPWM)
schemes for a six-level diode-clamped inverter topology
are proposed. The principle of the proposed PWM schemes is similar
to the conventional PD-PWM with a little deviation from it in the
sense that the triangular carriers are all overlapped. The overlapping
of the triangular carriers on one hand results in an increased number
of switchings, on the other hand this facilitates an improved spectral
performance of the output voltage. It is demonstrated through
simulation studies that the six-level diode-clamped inverter with the
use of CO-PD-SPWM and CO-PD-SVPWM proposed in this paper is
capable of generating multiple levels in its output voltage. The
advantages of the proposed PWM schemes can be derived to benefit,
especially at lower modulation indices of the inverter and hence this
aspect of the proposed PWM schemes can be well exploited in high
power applications requiring low speeds of operation of the drive.
Abstract: A device analysis of the photoconductive
semiconductor switch is carried out to investigate distribution of
electric field and carrier concentrations as well as the current density
distribution. The operation of this device was then investigated as a
switch operating in X band. It is shown that despite the presence of
symmetry geometry, switch current density of the on-state steady
state mode is distributed asymmetrically throughout the device.
Abstract: By analyzing the sources of energy and power
loss in PWM (Pulse Width Modulation) controlled drivers of
water electrolysis cells, it is possible to reduce the power
dissipation and enhance the efficiency of such hydrogen
production units. A PWM controlled power driver is based on
a semiconductor switching element where its power
dissipation might be a remarkable fraction of the total power
demand of an electrolysis system. Power dissipation in a
semiconductor switching element is related to many different
parameters which could be fitted into two main categories:
switching losses and conduction losses. Conduction losses are
directly related to the built, structure and capabilities of a
switching device itself and indeed the conditions in which the
element is handling the switching application such as voltage,
current, temperature and of course the fabrication technology.
On the other hand, switching losses have some other
influencing variables other than the mentioned such as control
system, switching method and power electronics circuitry of
the PWM power driver. By analyzings the characteristics of
recently developed power switching transistors from different
families of Bipolar Junction Transistors (BJT), Metal Oxide
Semiconductor Field Effect Transistors (MOSFET) and
Insulated Gate Bipolar Transistors (IGBT), some
recommendations are made in this paper which are able to
lead to achieve higher hydrogen production efficiency by
utilizing PWM controlled water electrolysis cells.