Structural and Optical Properties ofInxAlyGa1-x-yN Quaternary Alloys
Quaternary InxAlyGa1-x-yN semiconductors have
attracted much research interest because the use of this quaternary
offer the great flexibility in tailoring their band gap profile while
maintaining their lattice-matching and structural integrity. The
structural and optical properties of InxAlyGa1-x-yN alloys grown by
molecular beam epitaxy (MBE) is presented. The structural quality of
InxAlyGa1-x-yN layers was characterized using high-resolution X-ray
diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN
films had wurtzite structure and without phase separation. As the In
composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN
peak gradually decreases, indicating the increase in the lattice constant
c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with
increasing In composition from 0 to 0.04, that could indicate the
decrease of quality of the samples due to point defects leading to
non-uniformity of the epilayers. UV-VIS spectroscopy have been used
to study the energy band gap of InxAlyGa1-x-yN. As the indium (In)
compositions increases, the energy band gap decreases. However, for
InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a
sudden increase in energy. This is probably due to local alloy
compositional fluctuations in the epilayer. The bowing parameter
which appears also to be very sensitive on In content is investigated
and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From
photoluminescence (PL) measurement, green luminescence (GL)
appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm
and it become more pronounced as the In composition (x) increased,
which is believed cause by gallium vacancies and related to isolated
native defects.
[1] Sung-Nam Lee, H.S. Paek, H. Kim, K.K. Kim, Y.H. Cho, T. Jang, Y-Park,
"Growth and characterization of the AlInGaN quaternary protective layer
to suppress the thermal damage of InGaN multiple quantum wells,"
Journal of Crystal Growth, vol. 310, pp. 3881-3883, 2008.
[2] D.B. Li, X. Dong, J. Huang, X. Liu, Z. Xu, and Z. Wang, "Growth and
photoluminescence of InAlGaN films," Phys. Stat. Solidi C, vol. 0, No.7,
pp. 2001-2005, 2003.
[3] D.B. Li, X. Dong, J. Huang, X. Liu, Z. Xu, Z. Zhang, Z. Wang, "Alloy
compositional fluctuation in InAlGaN epitaxial films," Appl. Phys. A, vol
80, pp. 649-652, 2005.
[4] B.Z. Wang, X. L. Wang, X.Y. Wang, X.H. Wang, L.C. Guo, H.L. Xiao,
J.X. Wang, H.X. Liu, Y.P. Zeng, J.M. Li, Z.G. Wang, "Growth and
structural properties of InAlGaN quaternary alloys on sapphire substrates
by RF-MBE,- IEEE, 2006.
[5] J. Li, K.B. Nam, K.H. Kim, J.Y. Lin, and H.X. Jiang, "Growth and optical
properties of InxAlyGa1-x-yN quaternary alloys," Appl. Phys. Lett, vol. 78,
No.1, pp. 61-63, 2001.
[6] E. Dimakis, A. Georgakilas, G. Kittler, M. Androulidaki, K. Tsagaraki,
E.B. Amalric D. Jalabert, and N.T. Pelekanos, "High quality quaternary
alloys grown by plasma-assisted molecular beam epitaxy," IEEE, 2002.
[7] M. Androulidaki, N.T. Pelekanos, K. Tsagaraki, E.Dimakis, E. Ilipoulus,
A. Adikimenakis, E.B. Amalric, D. Jalabert, and A. Georgakilas, "Energy
gaps and bowing parameters of InAlGaN ternary and quaternary alloys,"
Phys. Stat. Sol. C, vol. 3, No. 6, pp. 1866-1869, 2006.
[8] J. Han, J.J.F, G.A. Petersen, S.M. Meyers, M.H. Crawford, and M.A.
Banas, "Metal-organic vapor-phase epitaxial growth and characterization
of quaternary AlGaInN," Jpn. J. Appl. Phys., vol. 39, pp. 2372-2375,
2000.
[9] E. Monroy, N.G, F. Enjalbert, F. Fossard, D. Jalabert, and E.B-Amalric,
"Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds," J. Appl.Phys., vol. 94, No. 5, pp. 3121-3127,
2003.
[10] S.W. Feng, Y.C. Cheng, Y.Y. Chung,C.C. Yang, K.J. Ma, C.C. Yan, C.
Hsu, J.Y. Lin and H.X. Jiang, "Strong green luminescence in quaternary
InAlGaN thin films," Appl. Phys. Lett, vol. 82, No. 9, pp. 1377-1379,
2003.
[1] Sung-Nam Lee, H.S. Paek, H. Kim, K.K. Kim, Y.H. Cho, T. Jang, Y-Park,
"Growth and characterization of the AlInGaN quaternary protective layer
to suppress the thermal damage of InGaN multiple quantum wells,"
Journal of Crystal Growth, vol. 310, pp. 3881-3883, 2008.
[2] D.B. Li, X. Dong, J. Huang, X. Liu, Z. Xu, and Z. Wang, "Growth and
photoluminescence of InAlGaN films," Phys. Stat. Solidi C, vol. 0, No.7,
pp. 2001-2005, 2003.
[3] D.B. Li, X. Dong, J. Huang, X. Liu, Z. Xu, Z. Zhang, Z. Wang, "Alloy
compositional fluctuation in InAlGaN epitaxial films," Appl. Phys. A, vol
80, pp. 649-652, 2005.
[4] B.Z. Wang, X. L. Wang, X.Y. Wang, X.H. Wang, L.C. Guo, H.L. Xiao,
J.X. Wang, H.X. Liu, Y.P. Zeng, J.M. Li, Z.G. Wang, "Growth and
structural properties of InAlGaN quaternary alloys on sapphire substrates
by RF-MBE,- IEEE, 2006.
[5] J. Li, K.B. Nam, K.H. Kim, J.Y. Lin, and H.X. Jiang, "Growth and optical
properties of InxAlyGa1-x-yN quaternary alloys," Appl. Phys. Lett, vol. 78,
No.1, pp. 61-63, 2001.
[6] E. Dimakis, A. Georgakilas, G. Kittler, M. Androulidaki, K. Tsagaraki,
E.B. Amalric D. Jalabert, and N.T. Pelekanos, "High quality quaternary
alloys grown by plasma-assisted molecular beam epitaxy," IEEE, 2002.
[7] M. Androulidaki, N.T. Pelekanos, K. Tsagaraki, E.Dimakis, E. Ilipoulus,
A. Adikimenakis, E.B. Amalric, D. Jalabert, and A. Georgakilas, "Energy
gaps and bowing parameters of InAlGaN ternary and quaternary alloys,"
Phys. Stat. Sol. C, vol. 3, No. 6, pp. 1866-1869, 2006.
[8] J. Han, J.J.F, G.A. Petersen, S.M. Meyers, M.H. Crawford, and M.A.
Banas, "Metal-organic vapor-phase epitaxial growth and characterization
of quaternary AlGaInN," Jpn. J. Appl. Phys., vol. 39, pp. 2372-2375,
2000.
[9] E. Monroy, N.G, F. Enjalbert, F. Fossard, D. Jalabert, and E.B-Amalric,
"Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds," J. Appl.Phys., vol. 94, No. 5, pp. 3121-3127,
2003.
[10] S.W. Feng, Y.C. Cheng, Y.Y. Chung,C.C. Yang, K.J. Ma, C.C. Yan, C.
Hsu, J.Y. Lin and H.X. Jiang, "Strong green luminescence in quaternary
InAlGaN thin films," Appl. Phys. Lett, vol. 82, No. 9, pp. 1377-1379,
2003.
@article{"International Journal of Electrical, Electronic and Communication Sciences:59694", author = "N. H. Abd Raof and H. Abu Hassan and S.K. Mohd Bakhori and S. S. Ng and Z. Hassan", title = "Structural and Optical Properties ofInxAlyGa1-x-yN Quaternary Alloys", abstract = "Quaternary InxAlyGa1-x-yN semiconductors have
attracted much research interest because the use of this quaternary
offer the great flexibility in tailoring their band gap profile while
maintaining their lattice-matching and structural integrity. The
structural and optical properties of InxAlyGa1-x-yN alloys grown by
molecular beam epitaxy (MBE) is presented. The structural quality of
InxAlyGa1-x-yN layers was characterized using high-resolution X-ray
diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN
films had wurtzite structure and without phase separation. As the In
composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN
peak gradually decreases, indicating the increase in the lattice constant
c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with
increasing In composition from 0 to 0.04, that could indicate the
decrease of quality of the samples due to point defects leading to
non-uniformity of the epilayers. UV-VIS spectroscopy have been used
to study the energy band gap of InxAlyGa1-x-yN. As the indium (In)
compositions increases, the energy band gap decreases. However, for
InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a
sudden increase in energy. This is probably due to local alloy
compositional fluctuations in the epilayer. The bowing parameter
which appears also to be very sensitive on In content is investigated
and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From
photoluminescence (PL) measurement, green luminescence (GL)
appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm
and it become more pronounced as the In composition (x) increased,
which is believed cause by gallium vacancies and related to isolated
native defects.", keywords = "HRXRD, nitrides, PL, quaternary, UV-VIS.", volume = "3", number = "7", pages = "1468-4", }