Abstract: Photo-BJMOSFET (Bipolar Junction Metal-Oxide-
Semiconductor Field Effect Transistor) fabricated on SOI film was proposed. ITO film is adopted in the device as gate electrode to reduce
light absorption. Depletion region but not inversion region is formed
in film by applying gate voltage (but low reverse voltage) to achieve
high photo-to-dark-current ratio. Comparisons of photoelectriccharacteristics
executed among VGK=0V, 0.3V, 0.6V, 0.9V and 1.0V
(reverse voltage VAK is equal to 1.0V for total area of 10×10μm2). The
results indicate that the greatest improvement in photo-to-dark-current
ratio is achieved up to 2.38 at VGK=0.6V. In addition,
photo-BJMOSFET is compatible with CMOS integration due to big
input resistance