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Design and Analysis of a New Dual-Band Microstrip Fractal Antenna

Year: 2015 Volume: 9 Issue: 1 8 - 11 Pages

• Authors:
• I. Zahraoui
• J. Terhzaz
• A. Errkik
• El. H. Abdelmounim
• A. Tajmouati
• L. Abdellaoui
• N. Ababssi
• M. Latrach

Abstract: This paper presents a novel design of a microstrip fractal antenna based on the use of Sierpinski triangle shape, it’s designed and simulated by using FR4 substrate in the operating frequency bands (GPS, WiMAX), the design is a fractal antenna with a modified ground structure. The proposed antenna is simulated and validated by using CST Microwave Studio Software, the simulated results presents good performances in term of radiation pattern and matching input impedance.

• Keywords:
• Dual-band antenna
• Fractal antenna
• GPS band
• Modified ground structure
• Sierpinski triangle
• WiMAX band.

Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology

Year: 2008 Volume: 2 Issue: 3 525 - 530 Pages

• Authors:
• Renbin Dai
• Rana Arslan Ali Khan

Abstract: The design of Class A and Class AB 2-stage X band Power Amplifier is described in this report. This power amplifier is part of a transceiver used in radar for monitoring iron characteristics in a blast furnace. The circuit was designed using foundry WIN Semiconductors. The specification requires 15dB gain in the linear region, VSWR nearly 1 at input as well as at the output, an output power of 10 dBm and good stable performance in the band 10.9-12.2 GHz. The design was implemented by using inter-stage configuration, the Class A amplifier was chosen for driver stage i.e. the first amplifier focusing on the gain and the output amplifier conducted at Class AB with more emphasis on output power.

• Keywords:
• Power amplifier
• Class AB
• Class A
• MMIC
• 2-stage
• X band.

The Analysis of Photoconductive Semiconductor Switch Operation in the Frequency of 10 GHz

Year: 2010 Volume: 4 Issue: 9 1368 - 1372 Pages

• Authors:
• Morteza Fathipour
• Seyed Nasrolah Anousheh
• Kaveh Ghiafeh Davoudi
• Vala Fathipour

Abstract: A device analysis of the photoconductive semiconductor switch is carried out to investigate distribution of electric field and carrier concentrations as well as the current density distribution. The operation of this device was then investigated as a switch operating in X band. It is shown that despite the presence of symmetry geometry, switch current density of the on-state steady state mode is distributed asymmetrically throughout the device.

• Keywords:
• Band X
• Gallium-Arsenide
• Mixed mode
• PCSS
• Photoconductivity.