Abstract: This paper presents a new compact analytical model of
the gate leakage current in high-k based nano scale MOSFET by
assuming a two-step inelastic trap-assisted tunneling (ITAT) process
as the conduction mechanism. This model is based on an inelastic
trap-assisted tunneling (ITAT) mechanism combined with a semiempirical
gate leakage current formulation in the BSIM 4 model. The
gate tunneling currents have been calculated as a function of gate
voltage for different gate dielectrics structures such as HfO2, Al2O3
and Si3N4 with EOT (equivalent oxide thickness) of 1.0 nm. The
proposed model is compared and contrasted with santaurus
simulation results to verify the accuracy of the model and excellent
agreement is found between the analytical and simulated data. It is
observed that proposed analytical model is suitable for different highk
gate dielectrics simply by adjusting two fitting parameters. It was
also shown that gate leakages reduced with the introduction of high-k
gate dielectric in place of SiO2.
Abstract: The porous silicon (PS), formed from the anodization
of a p+ type substrate silicon, consists of a network organized in a
pseudo-column as structure of multiple side ramifications. Structural
micro-topology can be interpreted as the fraction of the interconnected
solid phase contributing to thermal transport. The
reduction of dimensions of silicon of each nanocristallite during the
oxidation induced a reduction in thermal conductivity. Integration of
thermal sensors in the Microsystems silicon requires an effective
insulation of the sensor element. Indeed, the low thermal conductivity
of PS consists in a very promising way in the fabrication of integrated
thermal Microsystems.In this work we are interesting in the
measurements of thermal conductivity (on the surface and in depth)
of PS by the micro-Raman spectroscopy. The thermal conductivity is
studied according to the parameters of anodization (initial doping and
current density. We also, determine porosity of samples by
spectroellipsometry.
Abstract: Email has become a fast and cheap means of online
communication. The main threat to email is Unsolicited Bulk Email
(UBE), commonly called spam email. The current work aims at
identification of unigrams in more than 2700 UBE that advertise
body-enhancement drugs. The identification is based on the
requirement that the unigram is neither present in dictionary, nor is a
slang term. The motives of the paper are many fold. This is an
attempt to analyze spamming behaviour and employment of wordmutation
technique. On the side-lines of the paper, we have
attempted to better understand the spam, the slang and their interplay.
The problem has been addressed by employing Tokenization
technique and Unigram BOW model. We found that the non-lexicon
words constitute nearly 66% of total number of lexis of corpus
whereas non-slang words constitute nearly 2.4% of non-lexicon
words. Further, non-lexicon non-slang unigrams composed of 2
lexicon words, form more than 71% of the total number of such
unigrams. To the best of our knowledge, this is the first attempt to
analyze usage of non-lexicon non-slang unigrams in any kind of
UBE.
Abstract: The current-voltage characteristics of a PtSi/p-Si
Schottky barrier diode was measured at the temperature of 85 K and
from the forward bias region of the I-V curve, the electrical
parameters of the diode were measured by three methods. The results
obtained from the two methods which considered the series resistance
were in close agreement with each other and from them barrier height
(), ideality factor (n) and series resistance () were found to be
0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V
characteristics in the temperature range of 85-136 K the electrical
parameters were observed to have strong dependency on temperature.
The increase of barrier height and decrease of ideality factor with
increasing temperature is attributed to the existence of barrier height
inhomogeneities in the silicide-semiconductor structure.
Abstract: In this work, the influence of temperature on the
different parameters of solar cells based on organic semiconductors
are studied. The short circuit current Isc increases so monotonous
with temperature and then saturates to a maximum value before
decreasing at high temperatures. The open circuit voltage Vco
decreases linearly with temperature. The fill factor FF and efficiency,
which are directly related with Isc and Vco follow the variations of
the letters. The phenomena are explained by the behaviour of the
mobility which is a temperature activated process.
Abstract: We evaluate the average energy consumption per bit
in Optical Packet Switches equipped with BENES switching fabric
realized in Semiconductor Optical Amplifier (SOA) technology. We
also study the impact that the Amplifier Spontaneous Emission
(ASE) noise generated by a transmission system has on the power
consumption of the BENES switches due to the gain saturation of the
SOAs used to realize the switching fabric. As a matter of example for
32×32 switches supporting 64 wavelengths and offered traffic equal
to 0,8, the average energy consumption per bit is 2, 34 · 10-1 nJ/bit
and increases if ASE noise introduced by the transmission systems
is increased.
Abstract: This study presents design of a carbon silicon electrode
for iontophorsis treatment towards alopecia. The alopecia is a medical
description means loss of hair from the body. For solving this problem,
the drug need to be delivered into the scalp, therefore, the
iontophoresis was chosen to use in this treatment. However, almost
common electrodes of iontophoresis device are made with metal
material, the electrodes could give patients hurt when they using it, and
it is hard to avoid the hair for attaching the hair. For this reason, an
electrode is made with silicon material to decrease the hurt from the
electrodes, and the carbon material is mixed in it for increasing
conductance. The several cones with stainless material on the
electrode make the electrode is able to void hair to attach the affected
part. According to the results of a vivo-experiment, the carbon silicon
electrode showed a good performance and in treatment comfortably.
Abstract: The deposition of diamond films on a Si3N4 substrate
is an attractive technique for industrial applications because of the
excellent properties of diamond. Pretreatment of substrate is very
important prior to diamond deposition to promote nucleation and
adhesion between coating and substrate. Deposition of
nanocrystalline diamonds films on silicon nitride substrate have been
carried out by HF-CVD technique using mixture of methane and
hydrogen gases. Different pretreatment of substrate including
chemical etching consists of hot acid etching and basic etching and
mechanical etching were used to study the quality of diamond formed
on the substrate. The structure and morphology of diamond coating
have been studied using X-ray Diffraction (XRD) and Scanning
Electron Microscope (SEM) while diamond film quality has been
characterized using Raman spectroscopy. AFM was used to
investigate the effect of chemical etching and mechanical
pretreatment on the surface roughness of the substrates and the
resultant morphology of nanocrystalline diamond. It was found that
diamond film deposited on as-received, basic etched and grinded
substrate shows the morphology of cauliflower while blasted and
acidic etched substrates produce smooth, continuous diamond film.
However, the Raman investigation did not show any deviation in
quality of diamond film for any pretreatment.
Abstract: Overhead electrical insulators form an important link in an electric power system. Along with the traditional insulators (i.e. glass and porcelain, etc) presently the polymeric insulators are also used world widely. These polymeric insulators are very sensitive to various environmental parameters such temperature, environmental pollution, UV-radiations, etc. which seriously effect their electrical, chemical and hydrophobic properties. The UV radiation level in the central region of Saudi Arabia is high as compared to the IEC standard for the accelerated aging of the composite insulators. Commonly used suspension type of composite EPDM (Ethylene Propylene Diene Monomer) insulator was subjected to accelerated stress aging as per modified IEC standard simulating the inland arid deserts atmospheric condition and also as per IEC-61109 standard. The hydrophobic characteristics were studied by measuring the contact angle along the insulator surface before and after the accelerated aging of the samples. It was found that EPDM insulator loses it hydrophobic properties proportional to the intensity of UV irradiations and its rate of recovery is also very low as compared to Silicone Rubber insulator.KeywordsEPDM, composite insulators, accelerated aging, hydrophobicity, contact angle.
Abstract: This paper describes the design of new method of
propagation delay measurement in micro and nanostructures during
characterization of ASIC standard library cell. Providing more
accuracy timing information about library cell to the design team we
can improve a quality of timing analysis inside of ASIC design flow
process. Also, this information could be very useful for semiconductor
foundry team to make correction in technology process. By
comparison of the propagation delay in the CMOS element and result
of analog SPICE simulation. It was implemented as digital IP core for
semiconductor manufacturing process. Specialized method helps to
observe the propagation time delay in one element of the standard-cell
library with up-to picoseconds accuracy and less. Thus, the special
useful solutions for VLSI schematic to parameters extraction, basic
cell layout verification, design simulation and verification are
announced.
Abstract: The ionization energy in semiconductor
systems in nano scale was investigated by using effective mass
approximation. By introducing the Hamiltonian of the system, the
variational technique was employed to calculate the ground state and
the ionization energy of a donor at the center and in the case that the
impurities are randomly distributed inside a cubic quantum well. The
numerical results for GaAs/GaAlAs show that the ionization energy
strongly depends on the well width for both cases and it decreases as
the well width increases. The ionization energy of a quantum wire
was also calculated and compared with the results for the well.
Abstract: In this study we present the effect of elevated
temperatures from 300K to 400K on the electrical properties of
copper Phthalocyanine (CuPc) based organic field effect transistors
(OFET). Thin films of organic semiconductor CuPc (40nm) and
semitransparent Al (20nm) were deposited in sequence, by vacuum
evaporation on a glass substrate with previously deposited Ag source
and drain electrodes with a gap of 40 μm. Under resistive mode of
operation, where gate was suspended it was observed that drain
current of this organic field effect transistor (OFET) show an
increase with temperature. While in grounded gate condition metal
(aluminum) – semiconductor (Copper Phthalocyanine) Schottky
junction dominated the output characteristics and device showed
switching effect from low to high conduction states like Zener diode
at higher bias voltages. This threshold voltage for switching effect
has been found to be inversely proportional to temperature and shows
an abrupt decrease after knee temperature of 360K. Change in
dynamic resistance (Rd = dV/dI) with respect to temperature was
observed to be -1%/K.
Abstract: The power system network is becoming more
complex nowadays and it is very difficult to maintain the stability
of the system. Today-s enhancement of technology makes it
possible to include new energy storage devices in the electric
power system. In addition, with the aid of power electronic
devices, it is possible to independently exchange active and
reactive power flow with the utility grid. The main purpose of this
paper proposes a Proportional – Integral (PI) control based 48 –
pulse Inverter based Static Synchronous Series Compensator
(SSSC) with and without Superconducting Magnetic Energy
Storage (SMES) used for enhancing the transient stability and
regulating power flow in automatic mode. Using a test power
system through the dynamic simulation in Matlab/Simulink
platform validates the performance of the proposed SSSC with and
without SMES system.
Abstract: This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.
Abstract: Materials used on exterior spacecraft surfaces are subjected to many environmental threats which can cause degradation, atomic oxygen is one of the most threats. We prepared organic silicon atomic-oxygen-protection film using method of polymerization. This paper presented the effects on the film structure and its durability of the preparation processing, and analyzed the polymerization theory, the film structure and composition of the film. At last, we tested the film in our ground based atomic oxygen simulator, and indicated that the film worked well.
Abstract: Experiments were carried out at the Latvia State
Institute of Fruit-Growing in 2011. Fresh-cut minimally processed
apple and pear mixed salad were packed by passive modified
atmosphere (MAP) in PP containers, which were hermetically sealed
by breathable conventional BOPP PropafreshTM P2GAF, and Amcor
Agrifresh films. Biodegradable NatureFlexTM NVS INNOVIA Films
and VC999 BioPack PLA films coated with a barrier of pure silicon
oxide (SiOx) were used to compare the fresh-cut produce quality
with this packed in conventional packaging films. Samples were cold
stored at temperature +4.0±0.5 °C up to 10 days. The quality of salad
was evaluated by physicochemical properties – weight losses,
moisture, firmness, the effect of packaging modes on the colour,
dynamics in headspace atmosphere concentration (CO2 and O2),
titratable acidity values, as well as by microbiological contamination
(yeasts, moulds and total bacteria count) of salads, analyzing before
packaging and after 2, 4, 6, 8, and 10 storage days.
Abstract: In this paper we have numerically analyzed terahertzrange
wavelength conversion using nondegenerate four wave mixing
(NDFWM) in a SOA integrated DFB laser (experiments reported
both in MIT electronics and Fujitsu research laboratories). For
analyzing semiconductor optical amplifier (SOA), we use finitedifference
beam propagation method (FDBPM) based on modified
nonlinear SchrÖdinger equation and for distributed feedback (DFB)
laser we use coupled wave approach. We investigated wavelength
conversion up to 4THz probe-pump detuning with conversion
efficiency -5dB in 1THz probe-pump detuning for a SOA integrated
quantum-well
Abstract: The “conveyor belt" as a product represents a
complex high performance component with a wide range of different
applications. Further development of these highly complex
components demands an integration of new technologies and new
enhanced materials. In this context nanostructured fillers appear to
have a more promising effect on the performance of the conveyor
belt composite than conventional micro-scaled fillers.
Within the project “DotTrans" nanostructured fillers, for example
silicon dioxide, are used to optimize performance parameters of
conveyor belt systems. The objective of the project includes
operating parameters like energy consumption or friction
characteristics as well as adaptive parameters like cut or wear
resistance.
Abstract: This article summarizes ways to verify neutron
fluence for neutron transmutation doping of silicon with phosphorus
on the LVR-15 reactor. Neutron fluence is determined using
activation detectors placed along the crystal in a strip or encapsulated
in a rod holder. Holders are placed at the centre of a water-filled
capsule or in an aluminum or silicon ingot that simulates a real single
crystal. If the diameter of the crystal is significantly less than the
capsule diameter and water from the primary circuit enters the free
space in the capsule, neutron interaction in the water changes neutron
fluence, affecting axial irradiation homogeneity. The effect of
moving the capsule vertically in the channel relative to maximum
neutron fluence in the reactor core was also measured. Even a small
shift of the capsule-s centre causes great irradiation inhomogeneity.
This effect was measured using activation detectors, and was also
confirmed by MCNP calculation.
Abstract: The design of Class A and Class AB 2-stage X band
Power Amplifier is described in this report. This power amplifier is
part of a transceiver used in radar for monitoring iron characteristics
in a blast furnace. The circuit was designed using foundry WIN
Semiconductors. The specification requires 15dB gain in the linear
region, VSWR nearly 1 at input as well as at the output, an output
power of 10 dBm and good stable performance in the band 10.9-12.2
GHz. The design was implemented by using inter-stage
configuration, the Class A amplifier was chosen for driver stage i.e.
the first amplifier focusing on the gain and the output amplifier
conducted at Class AB with more emphasis on output power.