Impact of Gate Insulation Material and Thickness on Pocket Implanted MOS Device

This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO2), aluminum silicate (Al2SiO5), silicon nitride (Si3N4), alumina (Al2O3), hafnium silicate (HfSiO4), tantalum pentoxide (Ta2O5), hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and lanthanum oxide (La2O3) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.

CMOS-Compatible Deposited Materials for Photonic Layers Integrated above Electronic Integrated Circuit

Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed.

Effect of Surface Pretreatments on Nanocrystalline Diamond Deposited On Silicon Nitride Substrates

The deposition of diamond films on a Si3N4 substrate is an attractive technique for industrial applications because of the excellent properties of diamond. Pretreatment of substrate is very important prior to diamond deposition to promote nucleation and adhesion between coating and substrate. Deposition of nanocrystalline diamonds films on silicon nitride substrate have been carried out by HF-CVD technique using mixture of methane and hydrogen gases. Different pretreatment of substrate including chemical etching consists of hot acid etching and basic etching and mechanical etching were used to study the quality of diamond formed on the substrate. The structure and morphology of diamond coating have been studied using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) while diamond film quality has been characterized using Raman spectroscopy. AFM was used to investigate the effect of chemical etching and mechanical pretreatment on the surface roughness of the substrates and the resultant morphology of nanocrystalline diamond. It was found that diamond film deposited on as-received, basic etched and grinded substrate shows the morphology of cauliflower while blasted and acidic etched substrates produce smooth, continuous diamond film. However, the Raman investigation did not show any deviation in quality of diamond film for any pretreatment.

High Temperature Hydrogen Sensors Based On Pd/Ta2O5/SiC MOS Capacitor

There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor.