Contribution to the Study of Thermal Conductivity of Porous Silicon Used In Thermal Sensors
The porous silicon (PS), formed from the anodization
of a p+ type substrate silicon, consists of a network organized in a
pseudo-column as structure of multiple side ramifications. Structural
micro-topology can be interpreted as the fraction of the interconnected
solid phase contributing to thermal transport. The
reduction of dimensions of silicon of each nanocristallite during the
oxidation induced a reduction in thermal conductivity. Integration of
thermal sensors in the Microsystems silicon requires an effective
insulation of the sensor element. Indeed, the low thermal conductivity
of PS consists in a very promising way in the fabrication of integrated
thermal Microsystems.In this work we are interesting in the
measurements of thermal conductivity (on the surface and in depth)
of PS by the micro-Raman spectroscopy. The thermal conductivity is
studied according to the parameters of anodization (initial doping and
current density. We also, determine porosity of samples by
spectroellipsometry.
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[4] G. Bomchill, A. Halimaoui, R. Herino, Microelectron. Eng. vol. 8, 1988,
p. 293.
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Boyer, Sens. Actuators. vol. 79, 2000, p. 189.
[6] R. Bilyalov, L. Stalmans, G. Beaucarne, R. Loo, Caymax, J. Poortmans,
J. Nijs, Sol. Energy Mater. Sol. Cells. vol. 65, 2001, p. 477.
[7] R.B. Bergmann, Appl. Phys. A. vol. 69, 1999, p. 187.
[8] Brendel, Proceeding of the 14th European Photovoltaic Solar Energy
Conference, Barcelona, 1997, p. 1354.
[9] Shuo Huang, Xiaodong Ruan, Jun Zou, Xin Fu,Huayong Yang,
Microsyst Technol, vol. 15, 2009, pp. 837-842
[10] G. Gesele, J. Linsmeier, V. Drach, J. Fricke, and R. Arens-Fischer, J.
Physics D. vol. 30, 1997, p. 2911.
[11] V. Lysenko, S. Perichon, B. Remaki, D. Barbier, Sens. Actuators A,
vol. 99 , 2002, pp. 13-24.
[12] P. Maccagnani, R. Angelucci, P. Pozzi, A. Poggi, L. Dori, G.C.
Cardinali, P. Negrini, Sens. Actuators B, vol. 49 1998, pp. 22-29.
[13] C. Tsamis, A. Tserepi, A.G. Nassiopoulou, Sens. Actuators B, vol. 95,
2003, pp. 78-82.
[14] Sze S.M., physics of semiconductor devices, New York: John Wiley and
Sons., 1981, p. 42-43
[15] Yon J. J., Barla K, Herino R and Bomchil, J. Appl. Phys., 1987, vol. 62,
1042-1048
[16] D. E. Aspnes, J. B. Theeten, F. Hottier, Phys. Rev. B, vol. 20, 1979, 32-
92.
[17] I.H. Campbell, P.M. Fauchet, Solid State Commun., vol. 58, n┬░10, 1986,
pp. 739-741.
[18] Nonnenmacher M., Wickramasinghe H. K., scanning probe microscopy
of thermal conductivity and subsurface properties, Appl. Phys. Lett., ,
vol. 61, n┬░2, 1992, pp. 168-170
[1] Canham L. T., Appl. Phys. Lett., 1990, Vol. 57, p. 1046
[2] A.G. Cullis, L.T. Canham, P.D.J. Calcott, J. Appl. Phys. vol.82,
1997, p. 909.
[3] A.J. Read, R.J. Needs, K.J. Nash, L.T. Canham, P.D.J. Calcott, A.
Qteish, Phys. Rev. Lett. 69, 1992, p. 1232.
[4] G. Bomchill, A. Halimaoui, R. Herino, Microelectron. Eng. vol. 8, 1988,
p. 293.
[5] A. Foucaran, B. Sorli, M. Garcia, F. Pascal-Delannoy, A. Giani, A.
Boyer, Sens. Actuators. vol. 79, 2000, p. 189.
[6] R. Bilyalov, L. Stalmans, G. Beaucarne, R. Loo, Caymax, J. Poortmans,
J. Nijs, Sol. Energy Mater. Sol. Cells. vol. 65, 2001, p. 477.
[7] R.B. Bergmann, Appl. Phys. A. vol. 69, 1999, p. 187.
[8] Brendel, Proceeding of the 14th European Photovoltaic Solar Energy
Conference, Barcelona, 1997, p. 1354.
[9] Shuo Huang, Xiaodong Ruan, Jun Zou, Xin Fu,Huayong Yang,
Microsyst Technol, vol. 15, 2009, pp. 837-842
[10] G. Gesele, J. Linsmeier, V. Drach, J. Fricke, and R. Arens-Fischer, J.
Physics D. vol. 30, 1997, p. 2911.
[11] V. Lysenko, S. Perichon, B. Remaki, D. Barbier, Sens. Actuators A,
vol. 99 , 2002, pp. 13-24.
[12] P. Maccagnani, R. Angelucci, P. Pozzi, A. Poggi, L. Dori, G.C.
Cardinali, P. Negrini, Sens. Actuators B, vol. 49 1998, pp. 22-29.
[13] C. Tsamis, A. Tserepi, A.G. Nassiopoulou, Sens. Actuators B, vol. 95,
2003, pp. 78-82.
[14] Sze S.M., physics of semiconductor devices, New York: John Wiley and
Sons., 1981, p. 42-43
[15] Yon J. J., Barla K, Herino R and Bomchil, J. Appl. Phys., 1987, vol. 62,
1042-1048
[16] D. E. Aspnes, J. B. Theeten, F. Hottier, Phys. Rev. B, vol. 20, 1979, 32-
92.
[17] I.H. Campbell, P.M. Fauchet, Solid State Commun., vol. 58, n┬░10, 1986,
pp. 739-741.
[18] Nonnenmacher M., Wickramasinghe H. K., scanning probe microscopy
of thermal conductivity and subsurface properties, Appl. Phys. Lett., ,
vol. 61, n┬░2, 1992, pp. 168-170
@article{"International Journal of Engineering, Mathematical and Physical Sciences:64879", author = "A. Ould-Abbas and M. Bouchaour and and M. Madani and D. Trari and O. Zeggai and M. Boukais and N.-E.Chabane-Sari", title = "Contribution to the Study of Thermal Conductivity of Porous Silicon Used In Thermal Sensors", abstract = "The porous silicon (PS), formed from the anodization
of a p+ type substrate silicon, consists of a network organized in a
pseudo-column as structure of multiple side ramifications. Structural
micro-topology can be interpreted as the fraction of the interconnected
solid phase contributing to thermal transport. The
reduction of dimensions of silicon of each nanocristallite during the
oxidation induced a reduction in thermal conductivity. Integration of
thermal sensors in the Microsystems silicon requires an effective
insulation of the sensor element. Indeed, the low thermal conductivity
of PS consists in a very promising way in the fabrication of integrated
thermal Microsystems.In this work we are interesting in the
measurements of thermal conductivity (on the surface and in depth)
of PS by the micro-Raman spectroscopy. The thermal conductivity is
studied according to the parameters of anodization (initial doping and
current density. We also, determine porosity of samples by
spectroellipsometry.", keywords = "micro-Raman spectroscopy, mono-crysatl silicon,
porous silicon, thermal conductivity", volume = "6", number = "1", pages = "122-3", }