Abstract: Solid-state hydrogen storage using catalytically-modified porous silicon can be rapidly charged at moderate pressures (8 bar) without exothermic runaway. Discharge requires temperatures of approximately 110oC, so for larger storage vessels a means is required for thermal energy to penetrate bulk storage media. This can be realized with low-density metal foams, such as Celmet™. This study explores several material and dimensional choices of the metal foam to produce rapid heating of bulk silicon particulates. Experiments run under vacuum and in a pressurized hydrogen environment bracket conditions of empty and full hydrogen storage vessels, respectively. Curve-fitting of the heating profiles at various distances from an external heat source is used to derive both a time delay and a characteristic time constant. System performance metrics of a hydrogen storage subsystem are derived from the experimental results. A techno-economic analysis of the silicon and metal foam provides comparison with other methods of storing hydrogen for mobile and portable applications.
Abstract: In this paper, an experimental and theoretical study of the processes of mesoporous silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-band-gap semiconductors is performed. Experimental samples were obtained by the method of chemical vapor deposition and investigated by scanning electron microscopy. Analytic expressions were obtained for the effective diffusion factor and carbon atoms diffusion length in a porous system. The proposed model takes into account the processes of Knudsen diffusion, coagulation and overgrowing of pores during the formation of a silicon carbide layer.
Abstract: The effect of gamma ray irradiation on morphology and optical properties of ZnO/Mesoporous silica (MPS) nanocomposite was studied. The ZnO/MPS nanocomposite was irradiated with gamma rays of doses 30, 60, and 90 kGy and dose-rate of irradiation was 0.15 kGy/hour. Irradiated samples are characterized with FE-SEM, FT-IR, UV-vis, and Photoluminescence (PL) spectrometers. SEM pictures showed that morphology changed from spherical to flake like morphology. UV-vis analysis showed that the band gap increased with increase of gamma ray irradiation dose. This enhancement of the band gap is assigned to the depletion of oxygen vacancies with irradiation. The intensity of PL peak decreased gradually with increase of gamma ray irradiation dose. The decrease in PL intensity is attributed to the decrease of oxygen vacancies at the interface due to poor interface and improper passivation between ZnO/MPS.
Abstract: The original controlled technology for power active nanocomposite membrane-electrode assembly engineering on the basis of porous silicon is presented. The functional nanocomposites were studied by electron microscopy and cyclic voltammetry methods. The application possibility of the obtained nanocomposites as high performance renewable energy sources for micro-power electronic devices is demonstrated.
Abstract: Early diagnosis of infection like Hep-B virus in blood
is important for low cost medical treatment. For this purpose, it is
desirable to develop a point of care device which should be able to
detect trace quantities of the target molecule in blood. In this paper,
we report a nanoporous silicon oxide sensor which is capable of
detecting down to 1fM concentration of Hep-B surface antigen in
blood without the requirement of any centrifuge or pre-concentration.
This has been made possible by the presence of resonant peak in the
sensitivity characteristics. This peak is observed to be dependent only
on the concentration of the specific antigen and not on the interfering
species in blood serum. The occurrence of opposite impedance
change within the pores and at the bottom of the pore is responsible
for this effect. An electronic interface has also been designed to
provide a display of the virus concentration.
Abstract: Alkylated silicon nanocrystals (C11-SiNCs) were
prepared successfully by galvanostatic etching of p-Si(100) wafers
followed by a thermal hydrosilation reaction of 1-undecene in
refluxing toluene in order to extract C11-SiNCs from porous silicon.
Erbium trichloride was added to alkylated SiNCs using a simple
mixing chemical route. To the best of our knowledge, this is the first
investigation on mixing SiNCs with erbium ions (III) by this
chemical method. The chemical characterization of C11-SiNCs and
their mixtures with Er3+(Er/C11-SiNCs) were carried out using X-ray
photoemission spectroscopy (XPS). The optical properties of C11-
SiNCs and their mixtures with Er3+ were investigated using Raman
spectroscopy and photoluminescence (PL). The erbium mixed
alkylated SiNCs shows an orange PL emission peak at around 595
nm that originates from radiative recombination of Si. Er/C11-SiNCs
mixture also exhibits a weak PL emission peak at 1536 nm that
originates from the intra-4f transition in erbium ions (Er3+). The PL
peak of Si in Er/C11-SiNCs mixture is increased in the intensity up to
three times as compared to pure C11-SiNCs. The collected data
suggest that this chemical mixing route leads instead to a transfer of
energy from erbium ions to alkylated SiNCs.
Abstract: The porous silicon (PS), formed from the anodization
of a p+ type substrate silicon, consists of a network organized in a
pseudo-column as structure of multiple side ramifications. Structural
micro-topology can be interpreted as the fraction of the interconnected
solid phase contributing to thermal transport. The
reduction of dimensions of silicon of each nanocristallite during the
oxidation induced a reduction in thermal conductivity. Integration of
thermal sensors in the Microsystems silicon requires an effective
insulation of the sensor element. Indeed, the low thermal conductivity
of PS consists in a very promising way in the fabrication of integrated
thermal Microsystems.In this work we are interesting in the
measurements of thermal conductivity (on the surface and in depth)
of PS by the micro-Raman spectroscopy. The thermal conductivity is
studied according to the parameters of anodization (initial doping and
current density. We also, determine porosity of samples by
spectroellipsometry.
Abstract: The electrolyte stirring method of anodization etching
process for manufacturing porous silicon (PS) is reported in this work.
Two experimental setups of nature air stirring (PS-ASM) and
electrolyte stirring (PS-ESM) are employed to clarify the influence of
stirring mechanisms on electrochemical etching process. Compared to
traditional fabrication without any stirring apparatus (PS-TM), a large
plateau region of PS surface structure is obtained from samples with
both stirring methods by the 3D-profiler measurement. Moreover, the
light emission response is also improved by both proposed electrolyte
stirring methods due to the cycling force in electrolyte could
effectively enhance etch-carrier distribution while the electrochemical
etching process is made. According to the analysis of statistical
calculation of photoluminescence (PL) intensity, lower standard
deviations are obtained from PS-samples with studied stirring methods,
i.e. the uniformity of PL-intensity is effectively improved. The
calculated deviations of PL-intensity are 93.2, 74.5 and 64,
respectively, for PS-TM, PS-ASM and PS-ESM.