Abstract: This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.
Abstract: This paper presents a silicon controller rectifier (SCR)
based ESD protection circuit for IC. The proposed ESD protection
circuit has low trigger voltage and high holding voltage compared with
conventional SCR ESD protection circuit. Electrical characteristics of
the proposed ESD protection circuit are simulated and analyzed using
TCAD simulator. The proposed ESD protection circuit verified
effective low voltage ESD characteristics with low trigger voltage and
high holding voltage.