Abstract: Tomato (Lycopersicon esculentum Mill.) hybrid 'Brooklyn' was investigated at the LRCAF Institute of Horticulture. For investigation, five green tomatoes, which were grown on vine, were selected. Color measurements were made in the greenhouse with the same selected tomato fruits (fruits were not harvested and were growing and ripening on tomato vine through all experiment) in every two days while tomatoes fruits became fully ripen. Study showed that color index L has tendency to decline and established determination coefficient (R2) was 0.9504. Also, hue angle has tendency to decline during tomato fruit ripening on vine and it’s coefficient of determination (R2) reached – 0.9739. Opposite tendency was determined with color index a*, which has tendency to increase during tomato ripening and that was expressed by polynomial trendline where coefficient of determination (R2) reached – 0.9592.
Abstract: The yield management system is very important to produce high-quality semiconductor chips in the semiconductor manufacturing process. In order to improve quality of semiconductors, various tests are conducted in the post fabrication (FAB) process. During the test process, large amount of data are collected and the data includes a lot of information about defect. In general, the defect on the wafer is the main causes of yield loss. Therefore, analyzing the defect data is necessary to improve performance of yield prediction. The wafer bin map (WBM) is one of the data collected in the test process and includes defect information such as the fail bit patterns. The fail bit has characteristics of spatial point patterns. Therefore, this paper proposes the feature extraction method using the spatial point pattern analysis. Actual data obtained from the semiconductor process is used for experiments and the experimental result shows that the proposed method is more accurately recognize the fail bit patterns.
Abstract: Depending on the big data analysis becomes important, yield prediction using data from the semiconductor process is essential. In general, yield prediction and analysis of the causes of the failure are closely related. The purpose of this study is to analyze pattern affects the final test results using a die map based clustering. Many researches have been conducted using die data from the semiconductor test process. However, analysis has limitation as the test data is less directly related to the final test results. Therefore, this study proposes a framework for analysis through clustering using more detailed data than existing die data. This study consists of three phases. In the first phase, die map is created through fail bit data in each sub-area of die. In the second phase, clustering using map data is performed. And the third stage is to find patterns that affect final test result. Finally, the proposed three steps are applied to actual industrial data and experimental results showed the potential field application.
Abstract: Based upon generalized analysis of modern know-how in the sphere of processing, concentration and purification of iron-ore raw materials (IORM), in particular, the most widespread ferrioxide-silicate materials (FOSM), containing impurities of phosphorus and other elements compounds, noted special role of nanotechnological initiatives in improvement of such processes. Considered ideas of role of nanoparticles in processes of FOSM carbonization with subsequent direct reduction of ferric oxides contained in them to metal phase, as well as in processes of alkali treatment and separation of powered iron from phosphorus compounds. Using the obtained results the wasteless method of solid-phase processing, concentration and purification of IORM and FOSM from compounds of phosphorus, silicon and other impurities was developed and it excels known methods of direct iron reduction from iron ores and metallurgical slimes.
Abstract: The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.
Abstract: Silica fume, also known as microsilica (MS) or
condensed silica fume is a by-product of the production of silicon
metal or ferrosilicon alloys. Silica fume is one of the most effective
pozzolanic additives which could be used for ultrahigh performance
and other types of concrete. Despite the fact, however is not entirely
clear, which amount of silica fume is most optimal for UHPC. Main
objective of this experiment was to find optimal amount of silica
fume for UHPC with and without thermal treatment, when different
amount of quartz powder is substituted by silica fume. In this work
were investigated four different composition of UHPC with different
amount of silica fume. Silica fume were added 0, 10, 15 and 20% of
cement (by weight) to UHPC mixture. Optimal amount of silica fume
was determined by slump, viscosity, qualitative and quantitative
XRD analysis and compression strength tests methods.
Abstract: Silicon substrates coated with multiwalled carbon nanotubes (MWCNTs) were experimentally investigated to determine spark breakdown voltages relative to uncoated surfaces, the degree of surface degradation associated with the spark discharge, and techniques to minimize the surface degradation. The results may be applicable to instruments or processes that use MWCNT as a means of increasing local electric field strength and where spark breakdown is a possibility that might affect the devices’ performance or longevity. MWCNTs were shown to reduce the breakdown voltage of a 1mm gap in air by 30-50%. The relative decrease in breakdown voltage was maintained over gap distances of 0.5 to 2mm and gauge pressures of 0 to 4 bar. Degradation of the MWCNT coated surfaces was observed. Several techniques to improve durability were investigated. These included: chromium and gold-palladium coatings, tube annealing, and embedding clusters of MWCNT in a ceramic matrix.
Abstract: A laser is essentially an optical oscillator consisting of a resonant cavity, an amplifying medium and a pumping source. In semiconductor diode lasers, the cavity is created by the boundary between the cleaved face of the semiconductor crystal and air, and has reflective properties as a result of the differing refractive indices of the two media. For a GaAs-air interface a reflectance of 0.3 is typical and therefore the length of the semiconductor junction forms the resonant cavity. To prevent light being emitted in unwanted directions from the junction, sides perpendicular to the required direction are roughened. The objective of this work is to simulate the optical resonator Fabry-Perot and explore its main characteristics, such as FSR, finesse, linewidth, transmission and so on, that describe the performance of resonator.
Abstract: In this paper the relationships between professional competences and school curriculain IC design industry are explored. The semi-structured questionnaire survey and focus group interview is the research method. Study participants are graduates of microelectronics engineering professional departments who are currently employed in the IC industry. The IC industries are defined as the electronic component manufacturing industry and optical-electronic component manufacturing industry in the semiconductor industry and optical-electronic material devices, respectively. Study participants selected from IC design industry include IC engineering and electronic & semiconductor engineering. The human training with IC design professional competence in microelectronics engineering professional departments is explored in this research. IC professional competences of human resources in the IC design industry include general intelligence and professional intelligence.
Abstract: In Pharmaceutical industries, it is very important to remove drug residues from the equipment and areas used. The cleaning procedure must be validated, so special attention must be devoted to the methods used for analysis of trace amounts of drugs. A rapid, sensitive and specific reverse phase ultra performance liquid chromatographic (UPLC) method was developed for the quantitative determination of Albendazole in cleaning validation swab samples. The method was validated using an ACQUITY HSS C18, 50 x 2.1mm, 1.8μ column with a isocratic mobile phase containing a mixture of 1.36g of Potassium dihydrogenphosphate in 1000mL MilliQ water, 2mL of triethylamine and pH adjusted to 2.3 ± 0.05 with ortho-phosphoric acid, Acetonitrile and Methanol (50:40:10 v/v). The flow rate of the mobile phase was 0.5 mL min-1 with a column temperature of 350C and detection wavelength at 254nm using PDA detector. The injection volume was 2µl. Cotton swabs, moisten with acetonitrile were used to remove any residue of drug from stainless steel, teflon, rubber and silicon plates which mimic the production equipment surface and the mean extraction-recovery was found to be 91.8. The selected chromatographic condition was found to effectively elute Albendazole with retention time of 0.67min. The proposed method was found to be linear over the range of 0.2 to 150µg/mL and correlation coefficient obtained is 0.9992. The proposed method was found to be accurate, precise, reproducible and specific and it can also be used for routine quality control analysis of these drugs in biological samples either alone or in combined pharmaceutical dosage forms.
Abstract: Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390nm chopped light. Finally, the sensitivity and quantum efficiency were also studied.
Abstract: In this paper, we discuss semiconvergence of the alternating iterative methods for solving singular systems. The semiconvergence theories for the alternating methods are established when the coefficient matrix is a singular matrix. Furthermore, the corresponding comparison theorems are obtained.
Abstract: In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.
Abstract: We present the design of Analog front end (AFE) low noise pre-amplifier implemented in a high voltage 0.18-µm CMOS technology for a three dimensional ultrasound bio microscope (3D UBM) application. The fabricated chip has 4X16 pre-amplifiers implemented to interface a 2-D array of high frequency capacitive micro-machined ultrasound transducers (CMUT). Core AFE cell consists of a high-voltage pulser in the transmit path, and a low-noise transimpedance amplifier in the receive path. Proposed system offers a high image resolution by the use of high frequency CMUTs with associated high performance imaging electronics integrated together. Performance requirements and the design methods of the high bandwidth transimpedance amplifier are described in the paper. A single cell of transimpedance (TIA) amplifier and the bias circuit occupies a silicon area of 250X380 µm2 and the full chip occupies a total silicon area of 10x6.8 mm².
Abstract: The mechanism of nickel (Ni) metallization in silicon-germanium (Si0.5Ge0.5) alloy nanowire (NW) was studied. Transmission electron microscope imaging with in-situ annealing was conducted at temperatures of 200oC to 600°C. During rapid formation of Ni germanosilicide, loss of material from from the SiGe NW occurred which led to the formation of a thin Ni germanosilicide filament and eventual void. Energy dispersive X-ray spectroscopy analysis along the SiGe NW before and after annealing determined that Ge atoms tend to out-diffuse from the Ni germanosilicide towards the Ni source in the course of annealing. A model for the Ni germanosilicide formation in SiGe NW is proposed to explain this observation.
Abstract: Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed.
Abstract: Silicon photonics is merging as a unified platform for driving photonic based telecommunications and for local photonic based interconnect but it suffers from large footprint as compared with the nanoelectronics. Plasmonics is an attractive alternative for nanophotonics. In this work, two CMOS compatible plasmonic waveguide platforms are compared. One is the horizontal metal-insulator-Si-insulator-metal nanoplasmonic waveguide and the other is metal-insulator-Si hybrid plasmonic waveguide. Various passive and active photonic devices have been experimentally demonstrated based on these two plasmonic waveguide platforms.
Abstract: A silicon photomultiplier (SiPM) was designed, fabricated and characterized. The SiPM was based on SACM (Separation of Absorption, Charge and Multiplication) structure, which was optimized for blue light detection in application of positron emission tomography (PET). The achieved SiPM array has a high geometric fill factor of 64% and a low breakdown voltage of about 22V, while the temperature dependence of breakdown voltage is only 17mV/°C. The gain and photon detection efficiency of the device achieved were also measured under illumination of light at 405nm and 460nm wavelengths. The gain of the device is in the order of 106. The photon detection efficiency up to 60% has been observed under 1.8V overvoltage.
Abstract: This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.
Abstract: There are many classical algorithms for finding
routing in FPGA. But Using DNA computing we can solve the routes
efficiently and fast. The run time complexity of DNA algorithms is
much less than other classical algorithms which are used for solving
routing in FPGA. The research in DNA computing is in a primary
level. High information density of DNA molecules and massive
parallelism involved in the DNA reactions make DNA computing a
powerful tool. It has been proved by many research accomplishments
that any procedure that can be programmed in a silicon computer can
be realized as a DNA computing procedure. In this paper we have
proposed two tier approaches for the FPGA routing solution. First,
geometric FPGA detailed routing task is solved by transforming it
into a Boolean satisfiability equation with the property that any
assignment of input variables that satisfies the equation specifies a
valid routing. Satisfying assignment for particular route will result in
a valid routing and absence of a satisfying assignment implies that
the layout is un-routable. In second step, DNA search algorithm is
applied on this Boolean equation for solving routing alternatives
utilizing the properties of DNA computation. The simulated results
are satisfactory and give the indication of applicability of DNA
computing for solving the FPGA Routing problem.