Abstract: At present, a number of modern semiconductor devices based on SiGe alloys have been created in which the latest achievements of high technologies are used. These devices might cause significant changes to networking, computing, and space technology. In the nearest future new materials based on SiGe will be able to restrict the A3B5 and Si technologies and firmly establish themselves in medium frequency electronics. Effective realization of these prospects requires the solution of prediction and controlling of structural state and dynamical physical –mechanical properties of new SiGe materials. Based on these circumstances, a complex investigation of structural defects and structural-sensitive dynamic mechanical characteristics of SiGe alloys under different external impacts (deformation, radiation, thermal cycling) acquires great importance. Internal friction (IF) and shear modulus temperature and amplitude dependences of the monocrystalline boron-doped Si1-xGex(x≤0.05) alloys grown by Czochralski technique is studied in initial and 60Co gamma-irradiated states. In the initial samples, a set of dislocation origin relaxation processes and accompanying modulus defects are revealed in a temperature interval of 400-800 ⁰C. It is shown that after gamma-irradiation intensity of relaxation internal friction in the vicinity of 280 ⁰C increases and simultaneously activation parameters of high temperature relaxation processes reveal clear rising. It is proposed that these changes of dynamical mechanical characteristics might be caused by a decrease of the dislocation mobility in the Cottrell atmosphere enriched by the radiation defects.
Abstract: For precise geoid determination, we use a reference field to subtract long and medium wavelength of the gravity field from observations data when we use the remove-compute-restore technique. Therefore, a comparison study between considered models should be made in order to select the optimal reference gravity field to be used. In this context, two recent global geopotential models have been selected to perform this comparison study over Northern Algeria. The Earth Gravitational Model (EGM2008) and the Global Gravity Model (GECO) conceived with a combination of the first model with anomalous potential derived from a GOCE satellite-only global model. Free air gravity anomalies in the area under study have been used to compute residual data using both gravity field models and a Digital Terrain Model (DTM) to subtract the residual terrain effect from the gravity observations. Residual data were used to generate local empirical covariance functions and their fitting to the closed form in order to compare their statistical behaviors according to both cases. Finally, height anomalies were computed from both geopotential models and compared to a set of GPS levelled points on benchmarks using least squares adjustment. The result described in details in this paper regarding these two models has pointed out a slight advantage of GECO global model globally through error degree variances comparison and ground-truth evaluation.
Abstract: A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.
Abstract: It is necessary to realize new biomedical wireless communication systems which send the signals collected from various bio sensors located at human body in order to monitor our health. Also, it should seamlessly connect to the existing wireless communication systems. A 5.8 GHz ISM band low power RF front-end receiver for a biomedical wireless communication system is implemented using a 0.5 µm SiGe BiCMOS process. To achieve low power RF front-end, the current optimization technique for selecting device size is utilized. The implemented low noise amplifier (LNA) shows a power gain of 9.8 dB, a noise figure (NF) of below 1.75 dB, and an IIP3 of higher than 7.5 dBm while current consumption is only 6 mA at supply voltage of 2.5 V. Also, the performance of a down-conversion mixer is measured as a conversion gain of 11 dB and SSB NF of 10 dB.
Abstract: Metabolomics has become a rising field of research
for various diseases, particularly cancer. Increases or decreases in
metabolite concentrations in the human body are indicative of various
cancers. Further elucidation of metabolic pathways and their
significance in cancer research may greatly spur medicinal discovery.
We analyzed the metabolomics profiles of lung cancer. Thirty-three
metabolites were selected as significant. These metabolites are
involved in 37 metabolic pathways delivered by MetaboAnalyst
software. The top pathways are glyoxylate and dicarboxylate
pathway (its hubs are formic acid and glyoxylic acid) along with
Citrate cycle pathway followed by Taurine and hypotaurine pathway
(the hubs in the latter are taurine and sulfoacetaldehyde) and Glycine,
serine, and threonine pathway (the hubs are glycine and L-serine). We
studied interactions of the metabolites with the proteins involved in
cancer-related signaling networks, and developed an approach to
metabolomics biomarker use in cancer diagnostics. Our analysis
showed that a significant part of lung-cancer-related metabolites
interacts with main cancer-related signaling pathways present in this
network: PI3K–mTOR–AKT pathway, RAS–RAF–ERK1/2 pathway,
and NFKB pathway. These results can be employed for use of
metabolomics profiles in elucidation of the related cancer proteins
signaling networks.
Abstract: The mechanism of nickel (Ni) metallization in silicon-germanium (Si0.5Ge0.5) alloy nanowire (NW) was studied. Transmission electron microscope imaging with in-situ annealing was conducted at temperatures of 200oC to 600°C. During rapid formation of Ni germanosilicide, loss of material from from the SiGe NW occurred which led to the formation of a thin Ni germanosilicide filament and eventual void. Energy dispersive X-ray spectroscopy analysis along the SiGe NW before and after annealing determined that Ge atoms tend to out-diffuse from the Ni germanosilicide towards the Ni source in the course of annealing. A model for the Ni germanosilicide formation in SiGe NW is proposed to explain this observation.
Abstract: In this paper a new fast simplification method is
presented. Such method realizes Karnough map with large
number of variables. In order to accelerate the operation of the
proposed method, a new approach for fast detection of group
of ones is presented. Such approach implemented in the
frequency domain. The search operation relies on performing
cross correlation in the frequency domain rather than time one.
It is proved mathematically and practically that the number of
computation steps required for the presented method is less
than that needed by conventional cross correlation. Simulation
results using MATLAB confirm the theoretical computations.
Furthermore, a powerful solution for realization of complex
functions is given. The simplified functions are implemented
by using a new desigen for neural networks. Neural networks
are used because they are fault tolerance and as a result they
can recognize signals even with noise or distortion. This is
very useful for logic functions used in data and computer
communications. Moreover, the implemented functions are
realized with minimum amount of components. This is done
by using modular neural nets (MNNs) that divide the input
space into several homogenous regions. Such approach is
applied to implement XOR function, 16 logic functions on one
bit level, and 2-bit digital multiplier. Compared to previous
non- modular designs, a clear reduction in the order of
computations and hardware requirements is achieved.
Abstract: We have proposed an information filtering system
using index word selection from a document set based on the
topics included in a set of documents. This method narrows
down the particularly characteristic words in a document set
and the topics are obtained by Sparse Non-negative Matrix
Factorization. In information filtering, a document is often
represented with the vector in which the elements correspond
to the weight of the index words, and the dimension of the
vector becomes larger as the number of documents is
increased. Therefore, it is possible that useless words as index
words for the information filtering are included. In order to
address the problem, the dimension needs to be reduced. Our
proposal reduces the dimension by selecting index words
based on the topics included in a document set. We have
applied the Sparse Non-negative Matrix Factorization to the
document set to obtain these topics. The filtering is carried out
based on a centroid of the learning document set. The centroid
is regarded as the user-s interest. In addition, the centroid is
represented with a document vector whose elements consist of
the weight of the selected index words. Using the English test
collection MEDLINE, thus, we confirm the effectiveness of
our proposal. Hence, our proposed selection can confirm the
improvement of the recommendation accuracy from the other
previous methods when selecting the appropriate number of
index words. In addition, we discussed the selected index
words by our proposal and we found our proposal was able to
select the index words covered some minor topics included in
the document set.
Abstract: In this paper an extensive verification of the extraction
method (published earlier) that consistently accounts for self-heating
and Early effect to accurately extract both base and thermal resistance
of bipolar junction transistors is presented. The method verification is
demonstrated on advanced RF SiGe HBTs were the extracted results
for the thermal resistance are compared with those from another
published method that ignores the effect of Early effect on internal
base-emitter voltage and the extracted results of the base resistance
are compared with those determined from noise measurements. A
self-consistency of our method in the extracted base resistance and
thermal resistance using compact model simulation results is also
carried out in order to study the level of accuracy of the method.
Abstract: In this paper a new fast simplification method is presented. Such method realizes Karnough map with large number of variables. In order to accelerate the operation of the proposed method, a new approach for fast detection of group of ones is presented. Such approach implemented in the frequency domain. The search operation relies on performing cross correlation in the frequency domain rather than time one. It is proved mathematically and practically that the number of computation steps required for the presented method is less than that needed by conventional cross correlation. Simulation results using MATLAB confirm the theoretical computations. Furthermore, a powerful solution for realization of complex functions is given. The simplified functions are implemented by using a new desigen for neural networks. Neural networks are used because they are fault tolerance and as a result they can recognize signals even with noise or distortion. This is very useful for logic functions used in data and computer communications. Moreover, the implemented functions are realized with minimum amount of components. This is done by using modular neural nets (MNNs) that divide the input space into several homogenous regions. Such approach is applied to implement XOR function, 16 logic functions on one bit level, and 2-bit digital multiplier. Compared to previous non- modular designs, a clear reduction in the order of computations and hardware requirements is achieved.
Abstract: Study was conducted to determine the concentration of
copper, cadmium, lead and zinc in Cabomba furcata that found
abundance in Lake Chini. This aquatic plant was collected randomly
within the lake for heavy metal determination. Water quality
measurement was undertaken in situ for temperature, pH,
conductivity and dissolved oksigen using portable multi sensor probe
YSI model 556. The C. furcata was digested using wet digestion
method and heavy metal concentrations were analysed using Atomic
Absorption Spectrometer (AAS) Perkin Elmer 4100B (flame
method). Result of water quality classify Lake Chini between class II
to class III using Malaysian Water Quality Standard. According to
this standard, Lake Chini has moderate quality, which normal for
natural lake. Heavy metal concentrations in C.furcata were low and
found to be lower than the critical toxic value in aquatic plants. Oneway
ANOVA test indicated the heavy metal concentrations in
C.furcata were significantly differ between sampling location. Water
quality and heavy metal concentrations indicates that Lake Chini was
not receives anthropogenic load from nearby activities.
Abstract: RF performance of SOI CMOS device has attracted
significant amount of interest recently. In order to improve RF
parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a
replacement for Si technology .Enhancement of carrier mobility
associated with strain engineering makes Strained Si a promising
candidate for improving RF performance of CMOS technology.
From the simulation, the cut-off frequency is estimated to be 224
GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore,
Strained Si exhibits 19% improvement in cut-off frequency over
similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of
the key parameters in logic and digital application. Strained Si/SiGe
demonstrates better Ion/Ioff characteristic than SOI, in similar channel
length of 100 nm.Another important key analog figures of merit such
as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids)
are studied. They introduce the efficiency of the devices to convert
dc power into ac frequency.
Abstract: In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.
Abstract: We report a lithography-free approach to fabricate the
biomimetics, quasi-beehive Si nanostructures (QBSNs), on
Si-substrates. The self-assembled SiGe nanoislands via the strain
induced surface roughening (Asaro-Tiller-Grinfeld instability) during
in-situ annealing play a key role as patterned sacrifice regions for
subsequent reactive ion etching (RIE) process performed for
fabricating quasi-beehive nanostructures on Si-substrates. As the
measurements of field emission, the bare QBSNs show poor field
emission performance, resulted from the existence of the native oxide
layer which forms an insurmountable barrier for electron emission. In
order to dramatically improve the field emission characteristics, the
platinum nanopillars (Pt-NPs) were deposited on QBSNs to form
Pt-NPs/QBSNs heterostructures. The turn-on field of Pt-NPs/QBSNs
is as low as 2.29 V/μm (corresponding current density of 1 μA/cm2),
and the field enhancement factor (β-value) is significantly increased to
6067. More importantly, the uniform and continuous electrons excite
light emission, due to the surrounding filed emitters from
Pt-NPs/QBSNs, can be easily obtained. This approach does not require
an expensive photolithographic process and possesses great potential
for applications.
Abstract: In this paper we investigate the electrical
characteristics of a new structure of gate all around strained silicon
nanowire field effect transistors (FETs) with dual dielectrics by
changing the radius (RSiGe) of silicon-germanium (SiGe) wire and
gate dielectric. Indeed the effect of high-κ dielectric on Field Induced
Barrier Lowering (FIBL) has been studied. Due to the higher electron
mobility in tensile strained silicon, the n-type FETs with strained
silicon channel have better drain current compare with the pure Si
one. In this structure gate dielectric divided in two parts, we have
used high-κ dielectric near the source and low-κ dielectric near the
drain to reduce the short channel effects. By this structure short
channel effects such as FIBL will be reduced indeed by increasing
the RSiGe, ID-VD characteristics will be improved. The leakage
current and transfer characteristics, the threshold-voltage (Vt), the
drain induced barrier height lowering (DIBL), are estimated with
respect to, gate bias (VG), RSiGe and different gate dielectrics. For
short channel effects, such as DIBL, gate all around strained silicon
nanowire FET have similar characteristics with the pure Si one while
dual dielectrics can improve short channel effects in this structure.