Abstract: In this paper, a genetic-neural-network (GNN) based large-signal model for GaN HEMTs is presented along with its parameters extraction procedure. The model is easy to construct and implement in CAD software and requires only DC and S-parameter measurements. An improved decomposition technique is used to model self-heating effect. Two GNN models are constructed to simulate isothermal drain current and power dissipation, respectively. The two model are then composed to simulate the drain current. The modeling procedure was applied to a packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation with measured data. A very good agreement between the simulation and measurement is obtained.
Abstract: In this paper, we have proposed a novel FinFET with
extended body under the poly gate, which is called EB-FinFET, and
its characteristic is demonstrated by using three-dimensional (3-D)
numerical simulation. We have analyzed and compared it with
conventional FinFET. The extended body height dependence on the
drain induced barrier lowering (DIBL) and subthreshold swing (S.S)
have been also investigated. According to the 3-D numerical
simulation, the proposed structure has a firm structure, an acceptable
short channel effect (SCE), a reduced series resistance, an increased
on state drain current (I
on) and a large normalized I
DS. Furthermore,
the structure can also improve corner effect and reduce self-heating
effect due to the extended body. Our results show that the EBFinFET
is excellent for nanoscale device.
Abstract: In this paper an extensive verification of the extraction
method (published earlier) that consistently accounts for self-heating
and Early effect to accurately extract both base and thermal resistance
of bipolar junction transistors is presented. The method verification is
demonstrated on advanced RF SiGe HBTs were the extracted results
for the thermal resistance are compared with those from another
published method that ignores the effect of Early effect on internal
base-emitter voltage and the extracted results of the base resistance
are compared with those determined from noise measurements. A
self-consistency of our method in the extracted base resistance and
thermal resistance using compact model simulation results is also
carried out in order to study the level of accuracy of the method.
Abstract: When designing satellites, one of the major issues aside for designing its primary subsystems is to devise its thermal. The thermal management of satellites requires solving different sets of issues with regards to modelling. If the satellite is well conditioned all other parts of the satellite will have higher temperature no matter what. The main issue of thermal modelling for satellite design is really making sure that all the other points of the satellite will be within the temperature limits they are designed. The insertion of power electronics in aerospace technologies is becoming widespread and the modern electronic systems used in space must be reliable and efficient with thermal management unaffected by outer space constraints. Many advanced thermal management techniques have been developed in recent years that have application in high power electronic systems. This paper presents a Three-Dimensional Modal Transmission Line Matrix (3D-TLM) implementation of transient heat flow in space power electronics. In such kind of components heat dissipation and good thermal management are essential. Simulation provides the cheapest tool to investigate all aspects of power handling. The 3DTLM has been successful in modeling heat diffusion problems and has proven to be efficient in terms of stability and complex geometry. The results show a three-dimensional visualisation of self-heating phenomena in the device affected by outer space constraints, and will presents possible approaches for increasing the heat dissipation capability of the power modules.
Abstract: In this paper, we have developed an explicit analytical
drain current model comprising surface channel potential and
threshold voltage in order to explain the advantages of the proposed
Gate Stack Double Diffusion (GSDD) MOSFET design over the
conventional MOSFET with the same geometric specifications that
allow us to use the benefits of the incorporation of the high-k layer
between the oxide layer and gate metal aspect on the immunity of the
proposed design against the self-heating effects. In order to show the
efficiency of our proposed structure, we propose the simulation of the
power chopper circuit. The use of the proposed structure to design a
power chopper circuit has showed that the (GSDD) MOSFET can
improve the working of the circuit in terms of power dissipation and
self-heating effect immunity. The results so obtained are in close
proximity with the 2D simulated results thus confirming the validity
of the proposed model.