Verification of the Simultaneous Local Extraction Method of Base and Thermal Resistance of Bipolar Transistors

In this paper an extensive verification of the extraction
method (published earlier) that consistently accounts for self-heating
and Early effect to accurately extract both base and thermal resistance
of bipolar junction transistors is presented. The method verification is
demonstrated on advanced RF SiGe HBTs were the extracted results
for the thermal resistance are compared with those from another
published method that ignores the effect of Early effect on internal
base-emitter voltage and the extracted results of the base resistance
are compared with those determined from noise measurements. A
self-consistency of our method in the extracted base resistance and
thermal resistance using compact model simulation results is also
carried out in order to study the level of accuracy of the method.

• Robert Setekera
• Luuk Tiemeijer
• Ramses van der Toorn

• Avalanche
• Base resistance
• Bipolar transistor
• Compact modeling
• Early voltage
• Thermal resistance
• Self-heating
• parameter extraction.

[1] R. Setekera, R. van der Toorn, and W. Kloosterman, "Local extraction
of base and thermal resistance of bipolar transistors,” in Proc. Bipolar
Circuits and Technology Meeting, 2013, pp. 21–24.
[2] R. Setekera, L. F. Tiemeijer, W. J. Kloosterman, and R. van der Toorn,
"Analysis of the local extraction method of base and thermal resistance
of bipolar transistors,” in Proc. Bipolar Circuits and Technology Meeting,
2014, pp. 21–24.
[3] W. D. Noort, A. Rodriguez, H. Sun, F. Zaato, N. Zhang, T. Nesheiwat,
F. Neuilly, J. Melai, and E. Hijzen, "BiCMOS technology improvements
for microwave application,” in Proc. BCTM 6.2, 2008, pp. 93–96.
[4] T. Vanhoucke and G. A. M. Hurkx, "Simultaneous extraction of the base
and thermal resistances of bipolar transistors,” IEEE Transactions on
Electron Devices, vol. 52, no. 8, pp. 1887–1892, Aug 2005.
[5] D. Leenaerts, "mmwave activities within NXP,” Compus Technology
Seminar, March 2012.
[6] S. Z. A. J. G. Niu, J.D. Cressler and D. Harame, "Noise-gain tradeoff in
rf sige hbts,” Solid-State Elec., vol. 46, pp. 1445–1451, 2002.
[7] R. van der Toorn, J. C. J. Paasschens, W. J. Kloosterman, and H. C.
de Graaff, Compact Modeling: Principles, Techniques, and Applications.
Springer-Verlag, 2010, ch. 7.