Abstract: This paper presents PV system without considering transformer connected to electric grid. This is considered more economic compared to present PV system. The problem that occurs when transformer is not considered appears with a leakage current near capacitor connected to ground. Bipolar Pulse Width Modulation (BPWM) technique along with filter L-C-L configuration in the circuit is modeled to shrink the leakage current in the circuit. The DC/AC inverter is modeled using H-bridge Insulated Gate Bipolar Transistor (IGBT) module which is controlled using proposed Bipolar PWM control technique. To extract maximum power, Maximum Power Point Technique (MPPT) controller is used in this model. Voltage and current regulators are used to determine the reference voltage for the inverter from active and reactive current where reactive current is set to zero. The PLL is modeled to synchronize the measurements. The model is designed with MATLAB Simulation blocks and compared with the methods available in literature survey to show its effectiveness.
Abstract: Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO2 interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.
Abstract: The global energy consumption is increasing persistently and need for distributed power generation through renewable energy is essential. To meet the power requirements for consumers without any voltage fluctuations and losses, modeling and design of multilevel inverter with Flexible AC Transmission System (FACTS) capability is presented. The presented inverter is provided with 13-level cascaded H-bridge topology of Insulated Gate Bipolar Transistor (IGBTs) connected along with inbuilt Distributed Static Synchronous Compensators (DSTATCOM). The DSTATCOM device provides control of power factor stability at local feeder lines and the inverter eliminates Total Harmonic Distortion (THD). The 13-level inverter utilizes 52 switches of each H-bridge is fed with single DC sources separately and the Pulse Width Modulation (PWM) technique is used for switching IGBTs. The control strategy implemented for inverter transmits active power to grid as well as it maintains power factor to be stable with achievement of steady state power transmission. Significant outcome of this project is improvement of output voltage quality with steady state power transmission with low THD. Simulation of inverter with DSTATCOM is performed using MATLAB/Simulink environment. The scaled prototype model of proposed inverter is built and its results were validated with simulated results.
Abstract: A novel method to produce a fast high voltage solid
states switch using Insulated Gate Bipolar Transistors (IGBTs) is
presented for discharge-pumped gas lasers. The IGBTs are connected
in series to achieve a high voltage rating. An avalanche transistor is
used as the gate driver. The fast pulse generated by the avalanche
transistor quickly charges the large input capacitance of the IGBT,
resulting in a switch out of a fast high-voltage pulse. The switching
characteristic of fast-high voltage solid state switch has been estimated
in the multi-stage series-connected IGBT with the applied voltage of
several tens of kV. Electrical circuit diagram and the mythology of
fast-high voltage solid state switch as well as experimental results
obtained are presented.
Abstract: As application of re-activation of backside on power
device Insulated Gate Bipolar Transistor (IGBT), laser annealing was
employed to irradiate amorphous silicon substrate, and resistivities
were measured using four point probe measurement. For annealing
the amorphous silicon two lasers were used at wavelength of visible
green (532 nm) together with Infrared (793 nm). While the green
laser efficiently increased temperature at top surface the Infrared
laser reached more deep inside and was effective for melting the
top surface. A finite element method was employed to evaluate time
dependent thermal distribution in silicon substrate.
Abstract: In this paper an extensive verification of the extraction
method (published earlier) that consistently accounts for self-heating
and Early effect to accurately extract both base and thermal resistance
of bipolar junction transistors is presented. The method verification is
demonstrated on advanced RF SiGe HBTs were the extracted results
for the thermal resistance are compared with those from another
published method that ignores the effect of Early effect on internal
base-emitter voltage and the extracted results of the base resistance
are compared with those determined from noise measurements. A
self-consistency of our method in the extracted base resistance and
thermal resistance using compact model simulation results is also
carried out in order to study the level of accuracy of the method.
Abstract: Induction motors are being used in greater numbers
throughout a wide variety of industrial and commercial applications
because it provides many benefits and reliable device to convert the
electrical energy into mechanical motion. In some application it-s
desired to control the speed of the induction motor. Because of the
physics of the induction motor the preferred method of controlling its
speed is to vary the frequency of the AC voltage driving the motor. In
recent years, with the microcontroller incorporated into an appliance
it becomes possible to use it to generate the variable frequency AC
voltage to control the speed of the induction motor.
This study investigates the microcontroller based variable
frequency power inverter. the microcontroller is provide the variable
frequency pulse width modulation (PWM) signal that control the
applied voltage on the gate drive, which is provides the required
PWM frequency with less harmonics at the output of the power
inverter.
The fully controlled bridge voltage source inverter has been
implemented with semiconductors power devices isolated gate
bipolar transistor (IGBT), and the PWM technique has been
employed in this inverter to supply the motor with AC voltage.
The proposed drive system for three & single phase power inverter
is simulated using Matlab/Simulink. The Matlab Simulation Results
for the proposed system were achieved with different SPWM. From
the result a stable variable frequency inverter over wide range has
been obtained and a good agreement has been found between the
simulation and hardware of a microcontroller based single phase
inverter.
Abstract: By analyzing the sources of energy and power
loss in PWM (Pulse Width Modulation) controlled drivers of
water electrolysis cells, it is possible to reduce the power
dissipation and enhance the efficiency of such hydrogen
production units. A PWM controlled power driver is based on
a semiconductor switching element where its power
dissipation might be a remarkable fraction of the total power
demand of an electrolysis system. Power dissipation in a
semiconductor switching element is related to many different
parameters which could be fitted into two main categories:
switching losses and conduction losses. Conduction losses are
directly related to the built, structure and capabilities of a
switching device itself and indeed the conditions in which the
element is handling the switching application such as voltage,
current, temperature and of course the fabrication technology.
On the other hand, switching losses have some other
influencing variables other than the mentioned such as control
system, switching method and power electronics circuitry of
the PWM power driver. By analyzings the characteristics of
recently developed power switching transistors from different
families of Bipolar Junction Transistors (BJT), Metal Oxide
Semiconductor Field Effect Transistors (MOSFET) and
Insulated Gate Bipolar Transistors (IGBT), some
recommendations are made in this paper which are able to
lead to achieve higher hydrogen production efficiency by
utilizing PWM controlled water electrolysis cells.
Abstract: This paper present a MATLAB-SIMULINK model of a single phase 2.5 KVA, 240V RMS controlled PV VSI (Photovoltaic Voltage Source Inverter) inverter using IGBTs (Insulated Gate Bipolar Transistor). The behavior of output voltage, output current, and the total harmonic distortion (THD), with the variation in input dc blocking capacitor (Cdc), for linear and non-linear load has been analyzed. The values of Cdc as suggested by the other authors in their papers are not clearly defined and it poses difficulty in selecting the proper value. As the dc power stored in Cdc, (generally placed parallel with battery) is used as input to the VSI inverter. The simulation results shows the variation in the output voltage and current with different values of Cdc for linear and non-linear load connected at the output side of PV VSI inverter and suggest the selection of suitable value of Cdc.