A Novel 14 nm Extended Body FinFET for Reduced Corner Effect, Self-Heating Effect, and Increased Drain Current
In this paper, we have proposed a novel FinFET with
extended body under the poly gate, which is called EB-FinFET, and
its characteristic is demonstrated by using three-dimensional (3-D)
numerical simulation. We have analyzed and compared it with
conventional FinFET. The extended body height dependence on the
drain induced barrier lowering (DIBL) and subthreshold swing (S.S)
have been also investigated. According to the 3-D numerical
simulation, the proposed structure has a firm structure, an acceptable
short channel effect (SCE), a reduced series resistance, an increased
on state drain current (I
on) and a large normalized I
DS. Furthermore,
the structure can also improve corner effect and reduce self-heating
effect due to the extended body. Our results show that the EBFinFET
is excellent for nanoscale device.
[1] D. Hisamoto,W.-C. Lee, J.Kedzierski,H. Takeuchi, K. Asano, C.Kuo, E.
Anderson, T.-J. King, J.Bokor,and C. Hu, "FinFETÔÇöA Self-Aligned
Double-Gate MOSFETScalable to 20 nm,"IEEE Trans. Electron
Devices, vol. 47, no. 12, pp. 2320-2325, Dec. 2000.
[2] X. Huang, W.-C. Lee,C.Kuo, D.Hisamoto, Member,L. Chang,
J.Kedzierski, E. Anderson, H. Takeuchi, Y.-K. Choi,K. Asano, V.
Subramanian, T.-J. King, J.Bokor,and C. Hu,"Sub-50 nm P-Channel
FinFET," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 880-886,
May 2001.
[3] A. A. Orouji, and M. Mehrad,"A New Rounded Edge Fin Field Effect
Transistor for Improving Self-Heating Effects," Japanese Journal of
Applied Physics, vol. 50 , pp. 124303-1-6, 2011.
[4] M.Mehrad and A. A. Orouji,"Partially Cylindrical Fin Field-Effect
Transistor:A Novel Device for Nanoscale Applications,"IEEE Trans.
Electron Devices and Materials Reliability, vol. 10, no.2, pp. 271-275,
June 2010.
[5] L. Mathew, M. Sadd, S. Kalpat, M. Zavala, T. Stephens, R. Mora, S.
Bagchi, C. Parker, J. Vasek, D. Sing, R. Shimer, L. Prabhu, G.O.
Workman, G. Ablen,Z.Shi, J.Saenz , B. Min, D. Burnett, B.-Y. Nguyen,
J. Mogab., M.M. Chowdhury, W. Zhang,J.G.
Fossum,"Inverted T channel FET (ITFET)-
Fabrication andcharacteristics of vertical-horizontal, thin body,multigate,
multi-orientationdevices, ITFET SRAM bit-cell operation.A novel
technology for 45nm and beyond CMOS," inIEDM Tech. Dig., pp. 713-
716, 2005.
[6] X.Xu, R. Wang, R. Huang, J.Zhuge,G. Chen, X. Zhang,and Y.
Wang,"High-Performance BOI FinFETs Basedon Bulk-Silicon
Substrate,"IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3246-
3250, Nov. 2008.
[7] M.Shrivastava,M. S.Baghini,D. K. Sharma, and V.
R.Rao,"A Novel Bottom Spacer FinFET StructureforImprovedShort-
Channel, Power-Delay, and Thermal Performance,"IEEE Trans.
Electron Devices, vol. 57, no. 6, pp. 1287-1293, June 2010.
[8] X. Sun, V. Moroz, N.Damrongplasit,C. Shin, and T.-J. King Liu,
"Variation Study of the Planar Ground-Plane BulkMOSFET, SOI
FinFET, and TrigateBulk MOSFET Designs,"IEEE Trans. Electron
Devices, vol. 58, no. 10, pp. 3294-3299, Oct. 2011.
[9] Y.-C.Eng, J.-T. Lin, C.-H.Kuo,P.-H. Lin, Y.-H. Fan, and H.-H.
Chen,"Numerical Study of a Highly Scaled Bulk MOSFETWith Block
Oxide and Source/Drain-Tied Structure,"IEEE Trans. Electron Devices,
vol. 58, no.5, pp. 1381-1387, 2011.
[10] User-s manual, ISE TCAD, 2004.
[1] D. Hisamoto,W.-C. Lee, J.Kedzierski,H. Takeuchi, K. Asano, C.Kuo, E.
Anderson, T.-J. King, J.Bokor,and C. Hu, "FinFETÔÇöA Self-Aligned
Double-Gate MOSFETScalable to 20 nm,"IEEE Trans. Electron
Devices, vol. 47, no. 12, pp. 2320-2325, Dec. 2000.
[2] X. Huang, W.-C. Lee,C.Kuo, D.Hisamoto, Member,L. Chang,
J.Kedzierski, E. Anderson, H. Takeuchi, Y.-K. Choi,K. Asano, V.
Subramanian, T.-J. King, J.Bokor,and C. Hu,"Sub-50 nm P-Channel
FinFET," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 880-886,
May 2001.
[3] A. A. Orouji, and M. Mehrad,"A New Rounded Edge Fin Field Effect
Transistor for Improving Self-Heating Effects," Japanese Journal of
Applied Physics, vol. 50 , pp. 124303-1-6, 2011.
[4] M.Mehrad and A. A. Orouji,"Partially Cylindrical Fin Field-Effect
Transistor:A Novel Device for Nanoscale Applications,"IEEE Trans.
Electron Devices and Materials Reliability, vol. 10, no.2, pp. 271-275,
June 2010.
[5] L. Mathew, M. Sadd, S. Kalpat, M. Zavala, T. Stephens, R. Mora, S.
Bagchi, C. Parker, J. Vasek, D. Sing, R. Shimer, L. Prabhu, G.O.
Workman, G. Ablen,Z.Shi, J.Saenz , B. Min, D. Burnett, B.-Y. Nguyen,
J. Mogab., M.M. Chowdhury, W. Zhang,J.G.
Fossum,"Inverted T channel FET (ITFET)-
Fabrication andcharacteristics of vertical-horizontal, thin body,multigate,
multi-orientationdevices, ITFET SRAM bit-cell operation.A novel
technology for 45nm and beyond CMOS," inIEDM Tech. Dig., pp. 713-
716, 2005.
[6] X.Xu, R. Wang, R. Huang, J.Zhuge,G. Chen, X. Zhang,and Y.
Wang,"High-Performance BOI FinFETs Basedon Bulk-Silicon
Substrate,"IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3246-
3250, Nov. 2008.
[7] M.Shrivastava,M. S.Baghini,D. K. Sharma, and V.
R.Rao,"A Novel Bottom Spacer FinFET StructureforImprovedShort-
Channel, Power-Delay, and Thermal Performance,"IEEE Trans.
Electron Devices, vol. 57, no. 6, pp. 1287-1293, June 2010.
[8] X. Sun, V. Moroz, N.Damrongplasit,C. Shin, and T.-J. King Liu,
"Variation Study of the Planar Ground-Plane BulkMOSFET, SOI
FinFET, and TrigateBulk MOSFET Designs,"IEEE Trans. Electron
Devices, vol. 58, no. 10, pp. 3294-3299, Oct. 2011.
[9] Y.-C.Eng, J.-T. Lin, C.-H.Kuo,P.-H. Lin, Y.-H. Fan, and H.-H.
Chen,"Numerical Study of a Highly Scaled Bulk MOSFETWith Block
Oxide and Source/Drain-Tied Structure,"IEEE Trans. Electron Devices,
vol. 58, no.5, pp. 1381-1387, 2011.
[10] User-s manual, ISE TCAD, 2004.
@article{"International Journal of Engineering, Mathematical and Physical Sciences:60722", author = "Cheng-Hsien Chang and Jyi-Tsong Lin and Po-Hsieh Lin and Hung-Pei Hsu and Chan-Hsiang Chang and Ming-Tsung Shih and Shih-Chuan Tseng and Min-Yan Lin", title = "A Novel 14 nm Extended Body FinFET for Reduced Corner Effect, Self-Heating Effect, and Increased Drain Current", abstract = "In this paper, we have proposed a novel FinFET with
extended body under the poly gate, which is called EB-FinFET, and
its characteristic is demonstrated by using three-dimensional (3-D)
numerical simulation. We have analyzed and compared it with
conventional FinFET. The extended body height dependence on the
drain induced barrier lowering (DIBL) and subthreshold swing (S.S)
have been also investigated. According to the 3-D numerical
simulation, the proposed structure has a firm structure, an acceptable
short channel effect (SCE), a reduced series resistance, an increased
on state drain current (I
on) and a large normalized I
DS. Furthermore,
the structure can also improve corner effect and reduce self-heating
effect due to the extended body. Our results show that the EBFinFET
is excellent for nanoscale device.", keywords = "SOI, FinFET, tri-gate, self-heating effect.", volume = "7", number = "6", pages = "1010-4", }