Top Journal

International Journal of Architectural, Civil and Construction Sciences International Journal of Biological, Life and Agricultural Sciences International Journal of Chemical, Materials and Biomolecular Sciences International Journal of Business, Human and Social Sciences International Journal of Earth, Energy and Environmental Sciences International Journal of Electrical, Electronic and Communication Sciences International Journal of Engineering, Mathematical and Physical Sciences International Journal of Medical, Medicine and Health Sciences International Journal of Mechanical, Industrial and Aerospace Sciences International Journal of Information, Control and Computer Sciences

SUGGEST A JOURNAL

Join Scholarly today, and help us improve Open Access Journal database.

+ Sign Up

A Novel 14 nm Extended Body FinFET for Reduced Corner Effect, Self-Heating Effect, and Increased Drain Current

Year: 2013 Volume: 7 Issue: 6 1010 - 1013 Pages

Abstract: In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also investigated. According to the 3-D numerical simulation, the proposed structure has a firm structure, an acceptable short channel effect (SCE), a reduced series resistance, an increased on state drain current (I on) and a large normalized I DS. Furthermore, the structure can also improve corner effect and reduce self-heating effect due to the extended body. Our results show that the EBFinFET is excellent for nanoscale device.

Characterization of the LMOS with Different Channel Structure

Year: 2013 Volume: 7 Issue: 6 989 - 992 Pages

Abstract: In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.