Characterization of the LMOS with Different Channel Structure

In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Authors:

• Hung-Pei Hsu
• Jyi-Tsong Lin
• Po-Hsieh Lin
• Cheng-Hsien Chang
• Ming-Tsung Shih
• Chan-Hsiang Chang
• Shih-Chuan Tseng
• Min-Yan Lin
• Shih-Wen Hsu

Keywords:

• Average gate length (Lavg)
• drain-induced barrier lowering (DIBL)
• L-shaped channel MOSFET (LMOS)
• subthreshold swing (S.S.).

References:

[1] X. Sun and T.-J. King Liu, "Scale-Length Assessment of the Trigate
Bulk MOSFET Design," IEEE Trans. Electron Devices, vol. 56, no 11,
pp. 2840-2842, Nov, 2009..
[2] R. A. Vega and T.-J. K. Liu, "Three_Dimensional FinFET Source_Drain
and Contact Design Optimization Study," IEEE Trans. Electron Devices,
vol. 56, no 7, pp. 1482-1492, July, 2009..
[3] B. Ramadout and G.-N. Lu et al., "Multigate MOSFET in a Bulk
Technology by Integrating Polysilicon-Filled Trenches," IEEE Electron
Device, vol. 30, no 12, pp. 1350-1352, Dec, 2009..
[4] P. Magnone and A. Mercha et al, "Matching Performance of FinFET
Devices With Fin Widths Down to 10 nm," IEEE Electron Device Lett,
vol. 30. no 12, pp. 1374-1376, Dec, 2009..
[5] J.-T. Lin and P.-H. Lin, IEEE "Characterization of a New L-shaped
MOSFET for Future Deca Nano Application," International Conference
on Microelectronics, Serbia, 2012.