Abstract: The study of the transport coefficients in electronic
devices is currently carried out by analytical and empirical models.
This study requires several simplifying assumptions, generally
necessary to lead to analytical expressions in order to study the
different characteristics of the electronic silicon-based devices.
Further progress in the development, design and optimization of
Silicon-based devices necessarily requires new theory and modeling
tools. In our study, we use the PSO (Particle Swarm Optimization)
technique as a computational tool to develop analytical approaches in
order to study the transport phenomenon of the electron in crystalline
silicon as function of temperature and doping concentration. Good
agreement between our results and measured data has been found.
The optimized analytical models can also be incorporated into the
circuits simulators to study Si-based devices without impact on the
computational time and data storage.
Abstract: In this paper, we have developed an explicit analytical
drain current model comprising surface channel potential and
threshold voltage in order to explain the advantages of the proposed
Gate Stack Double Diffusion (GSDD) MOSFET design over the
conventional MOSFET with the same geometric specifications that
allow us to use the benefits of the incorporation of the high-k layer
between the oxide layer and gate metal aspect on the immunity of the
proposed design against the self-heating effects. In order to show the
efficiency of our proposed structure, we propose the simulation of the
power chopper circuit. The use of the proposed structure to design a
power chopper circuit has showed that the (GSDD) MOSFET can
improve the working of the circuit in terms of power dissipation and
self-heating effect immunity. The results so obtained are in close
proximity with the 2D simulated results thus confirming the validity
of the proposed model.