Abstract: In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.
Abstract: In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.
Abstract: In this paper, a genetic-neural-network (GNN) based large-signal model for GaN HEMTs is presented along with its parameters extraction procedure. The model is easy to construct and implement in CAD software and requires only DC and S-parameter measurements. An improved decomposition technique is used to model self-heating effect. Two GNN models are constructed to simulate isothermal drain current and power dissipation, respectively. The two model are then composed to simulate the drain current. The modeling procedure was applied to a packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation with measured data. A very good agreement between the simulation and measurement is obtained.
Abstract: The out-of-band impedance environment is considered
to be of paramount importance in engineering the in-band impedance
environment. Presenting the frequency independent and constant outof-
band impedances across the wide modulation bandwidth is
extremely important for reliable device characterization for future
wireless systems. This paper presents an out-of-band impedance
optimization scheme based on simultaneous engineering of
significant baseband components IF1 (twice the modulation
frequency) and IF2 (four times the modulation frequency) and higher
baseband components such as IF3 (six times the modulation
frequency) and IF4 (eight times the modulation frequency) to
engineer the in-band impedance environment. The investigations
were carried out on a 10W GaN HEMT device driven to deliver a
peak envelope power of approximately 40.5dBm under modulated
excitation. The presentation of frequency independent baseband
impedances to all the significant baseband components whilst
maintaining the optimum termination for fundamental tones as well
as reactive termination for 2nd harmonic under class-J mode of
operation has outlined separate optimum impedances for best
intermodulation (IM) linearity.
Abstract: This article proposes a new method for application in
communication circuit systems that increase efficiency, PAE, output
power and gain in the circuit. The proposed method is based on a
combination of switching class-E and class-J and has been termed
class-EJ. This method was investigated using both theory and
simulation to confirm ∼72% PAE and output power of >39dBm. The
combination and design of the proposed power amplifier accrues gain
of over 15dB in the 2.9 to 3.5GHz frequency bandwidth. This circuit
was designed using MOSFET and high power transistors. The loadand
source-pull method achieved the best input and output networks
using lumped elements. The proposed technique was investigated for
fundamental and second harmonics having desirable amplitudes for
the output signal.
Abstract: The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.
We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (fT) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.
Abstract: The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.