Abstract: The out-of-band impedance environment is considered
to be of paramount importance in engineering the in-band impedance
environment. Presenting the frequency independent and constant outof-
band impedances across the wide modulation bandwidth is
extremely important for reliable device characterization for future
wireless systems. This paper presents an out-of-band impedance
optimization scheme based on simultaneous engineering of
significant baseband components IF1 (twice the modulation
frequency) and IF2 (four times the modulation frequency) and higher
baseband components such as IF3 (six times the modulation
frequency) and IF4 (eight times the modulation frequency) to
engineer the in-band impedance environment. The investigations
were carried out on a 10W GaN HEMT device driven to deliver a
peak envelope power of approximately 40.5dBm under modulated
excitation. The presentation of frequency independent baseband
impedances to all the significant baseband components whilst
maintaining the optimum termination for fundamental tones as well
as reactive termination for 2nd harmonic under class-J mode of
operation has outlined separate optimum impedances for best
intermodulation (IM) linearity.