Abstract: In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.
Abstract: We report a lithography-free approach to fabricate the
biomimetics, quasi-beehive Si nanostructures (QBSNs), on
Si-substrates. The self-assembled SiGe nanoislands via the strain
induced surface roughening (Asaro-Tiller-Grinfeld instability) during
in-situ annealing play a key role as patterned sacrifice regions for
subsequent reactive ion etching (RIE) process performed for
fabricating quasi-beehive nanostructures on Si-substrates. As the
measurements of field emission, the bare QBSNs show poor field
emission performance, resulted from the existence of the native oxide
layer which forms an insurmountable barrier for electron emission. In
order to dramatically improve the field emission characteristics, the
platinum nanopillars (Pt-NPs) were deposited on QBSNs to form
Pt-NPs/QBSNs heterostructures. The turn-on field of Pt-NPs/QBSNs
is as low as 2.29 V/μm (corresponding current density of 1 μA/cm2),
and the field enhancement factor (β-value) is significantly increased to
6067. More importantly, the uniform and continuous electrons excite
light emission, due to the surrounding filed emitters from
Pt-NPs/QBSNs, can be easily obtained. This approach does not require
an expensive photolithographic process and possesses great potential
for applications.