Abstract: The seriously damaged structures during earthquakes
show the need and importance of design of reinforced concrete
structures with high ductility. Reinforced concrete beam-column
joints have an important function in all structures. Under seismic
excitation, the beam column joint region is subjected to horizontal
and vertical shear forces whose magnitude is many times higher than
the adjacent beam and column. Strength and ductility of structures
depends mainly on proper detailing of the reinforcement in beamcolumn
joints and the old structures were found ductility deficient.
DSP materials are obtained by using high quantities of super
plasticizers and high volumes of micro silica. In the case of High
Performance Densified Small Particle Concrete (HPDSPC), since
concrete is dense even at the micro-structure level, tensile strain
would be much higher than that of the conventional SFRC, SIFCON
& SIMCON. This in turn will improve cracking behaviour, ductility
and energy absorption capacity of composites in addition to
durability. The fine fibers used in our mix are 0.3mm diameter and 10
mm which can be easily placed with high percentage. These fibers
easily transfer stresses and act as a composite concrete unit to take up
extremely high loads with high compressive strength. HPDSPC
placed in the beam column joints helps in safety of human life due to
prolonged failure.
Abstract: InGaAsN and GaAsN epitaxial layers with similar
nitrogen compositions in a sample were successfully grown on a
GaAs (001) substrate by solid source molecular beam epitaxy. An
electron cyclotron resonance nitrogen plasma source has been used to
generate atomic nitrogen during the growth of the nitride layers. The
indium composition changed from sample to sample to give
compressive and tensile strained InGaAsN layers. Layer
characteristics have been assessed by high-resolution x-ray
diffraction to determine the relationship between the lattice constant
of the GaAs1-yNy layer and the fraction x of In. The objective was to
determine the In fraction x in an InxGa1-xAs1-yNy epitaxial layer which
exactly cancels the strain present in a GaAs1-yNy epitaxial layer with
the same nitrogen content when grown on a GaAs substrate.
Abstract: In this paper we investigate the electrical
characteristics of a new structure of gate all around strained silicon
nanowire field effect transistors (FETs) with dual dielectrics by
changing the radius (RSiGe) of silicon-germanium (SiGe) wire and
gate dielectric. Indeed the effect of high-κ dielectric on Field Induced
Barrier Lowering (FIBL) has been studied. Due to the higher electron
mobility in tensile strained silicon, the n-type FETs with strained
silicon channel have better drain current compare with the pure Si
one. In this structure gate dielectric divided in two parts, we have
used high-κ dielectric near the source and low-κ dielectric near the
drain to reduce the short channel effects. By this structure short
channel effects such as FIBL will be reduced indeed by increasing
the RSiGe, ID-VD characteristics will be improved. The leakage
current and transfer characteristics, the threshold-voltage (Vt), the
drain induced barrier height lowering (DIBL), are estimated with
respect to, gate bias (VG), RSiGe and different gate dielectrics. For
short channel effects, such as DIBL, gate all around strained silicon
nanowire FET have similar characteristics with the pure Si one while
dual dielectrics can improve short channel effects in this structure.