Investigation of Multiple Material Gate Impact on Short Channel Effects and Reliability of Nanoscale SOI MOSFETs

In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material structures

Optical Analysis of Variable Aperture Mechanism for a Solar Reactor

Solar energy is not only sustainable but also a clean alternative to be used as source of high temperature heat for many processes and power generation. However, the major drawback of solar energy is its transient nature. Especially in solar thermochemical processing, it is crucial to maintain constant or semiconstant temperatures inside the solar reactor. In our laboratory, we have developed a mechanism allowing us to achieve semi-constant temperature inside the solar reactor. In this paper, we introduce the concept along with some updated designs and provide the optical analysis of the concept under various incoming flux.

The Light Response Characteristics of Oxide-Based Thin Film Transistors

We fabricated the inverted-staggered etch stopper structure oxide-based TFT and investigated the characteristics of oxide TFT under the 400 nm wavelength light illumination. When 400 nm light was illuminated, the threshold voltage (Vth) decreased and subthreshold slope (SS) increased at forward sweep, while Vth and SS were not altered when larger wavelength lights, such as 650 nm, 550 nm and 450 nm, were illuminated. At reverse sweep, the transfer curve barely changed even under 400 nm light. Our experimental results support that photo-induced hole carriers are captured by donor-like interface trap and it caused the decrease of Vth and increase of SS. We investigated the interface trap density increases proportionally to the photo-induced hole concentration at active layer.

Methodology of Realization for Supervisor and Simulator Dedicated to a Semiconductor Research and Production Factory

In the micro and nano-technology industry, the «clean-rooms» dedicated to manufacturing chip, are equipped with the most sophisticated equipment-tools. There use a large number of resources in according to strict specifications for an optimum working and result. The distribution of «utilities» to the production is assured by teams who use a supervision tool. The studies show the interest to control the various parameters of production or/and distribution, in real time, through a reliable and effective supervision tool. This document looks at a large part of the functions that the supervisor must assure, with complementary functionalities to help the diagnosis and simulation that prove very useful in our case where the supervised installations are complexed and in constant evolution.

Chain Extender on Property Relationships of Polyurethane Derived from Soybean Oil

Polyurethane foams (PUF) has been prepared from vegetable; soybean based polyols. They were characterized into flexible and semi rigid polyurethane foam. This work is directed to production of flexible polyurethane foams by a process involving the reaction of mixture of 2,4- and 2,6-Toluene di Isocyanate isomers, with portion of to blends of soy polyols with petroleum polyol in the presence of other ingredients such as blowing agents, silicone surfactants and accelerating agents. Additon of chain extender improves the property then further decreases the properties on further addition of the same. The objective of this work was to study the effect of chain extender and role of phosphoric acid catalyst to the final properties and correlate the morphology image with mechanical properties of these foams.

Theory of Nanowire Radial p-n-Junction

We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structure utilizing as a new building block in different semiconductor devices. The potential distribution through the p-n-junction is calculated and the analytical expressions are derived to compute the depletion region widths. We show that the widths of space charge layers, surrounding the core, are the functions of core radius, which is the manifestation of so called classical size effect. The relationship between the depletion layer width and the built-in potential in the asymptotes of infinitely large core radius transforms to square-root dependence specific for conventional planar p-n-junctions. The explicit equation is derived to compute the capacitance of radial p-n-junction. The current-voltage behavior is also carefully determined taking into account the “short base" effects.

Influence of PLA Film Packaging on the Shelf Life of Soft Cheese Kleo

Experiments were carried out at the Faculty of Food Technology of Latvia University of Agriculture (LLU). Soft cheese Kleo produced in Latvia was packed in a biodegradable PLA without barrierproperties and VC999 BioPack lidding film PLA, coated with a barrier of pure silicon oxide (SiOx) and in combination with modified atmosphere (MAP) the influence on the shelf life was investigated and compared with some conventional (OPP, PE/PA, PE/OPA and Multibarrier 60) polymer film impact. Modified atmosphere consisted of carbon dioxide CO2 (E 290) 30% and nitrogen N2 (E 941) 70%. The analyzable samples were stored at the temperature of +4.0±0.5 °C up to 32 days- and analyzed before packaging and in the 0, 5th, 11th, 15th, 18th, 22nd, 25th, 29th and 32nd day of storage. The shelf life was extended along to 32 days, good outside appearance and lactic acid aroma was observed.

Inductance Characteristic of Annealed Titanium Dioxide on Silicon Substrate

The control of oxygen flow rate during growth of titanium dioxide by mass flow controller in DC plasma sputtering growth system is studied. The impedance of TiO2 films for inductance effect is influenced by annealing time and oxygen flow rate. As annealing time is increased, the inductance of TiO2 film is the more. The growth condition of optimum and maximum inductance for TiO2 film to serve as sensing device are oxygen flow rate of 15 sccm and large annealing time. The large inductance of TiO2 film will be adopted to fabricate the biosensor to obtain the high sensitivity of sensing in biology.

Vector Control of Multimotor Drive

Three-phase induction machines are today a standard for industrial electrical drives. Cost, reliability, robustness and maintenance free operation are among the reasons these machines are replacing dc drive systems. The development of power electronics and signal processing systems has eliminated one of the greatest disadvantages of such ac systems, which is the issue of control. With modern techniques of field oriented vector control, the task of variable speed control of induction machines is no longer a disadvantage. The need to increase system performance, particularly when facing limits on the power ratings of power supplies and semiconductors, motivates the use of phase number other than three, In this paper a novel scheme of connecting two, three phase induction motors in parallel fed by two inverters; viz. VSI and CSI and their vector control is presented.

Organic Thin Film Transistors based Oligothiophine Derivatives using DZ-Dihexyl(quarter- and sexi-)Thiophene

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers,DZ-dihexylquarterthiophene (DH-4T) and DZ-dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtained a stable characteristic curve. The field effect mobility, Pwas calculated to be 3.2910-4 cm2/Vs for DH-6T based OTFT; while the DH-4T based OTFT had 1.8810-5 cm2/Vs.KeywordsOrganic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

High Temperature Hydrogen Sensors Based On Pd/Ta2O5/SiC MOS Capacitor

There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor.

Optimum Surface Roughness Prediction in Face Milling of High Silicon Stainless Steel

This paper presents an approach for the determination of the optimal cutting parameters (spindle speed, feed rate, depth of cut and engagement) leading to minimum surface roughness in face milling of high silicon stainless steel by coupling neural network (NN) and Electromagnetism-like Algorithm (EM). In this regard, the advantages of statistical experimental design technique, experimental measurements, artificial neural network, and Electromagnetism-like optimization method are exploited in an integrated manner. To this end, numerous experiments on this stainless steel were conducted to obtain surface roughness values. A predictive model for surface roughness is created by using a back propogation neural network, then the optimization problem was solved by using EM optimization. Additional experiments were performed to validate optimum surface roughness value predicted by EM algorithm. It is clearly seen that a good agreement is observed between the predicted values by EM coupled with feed forward neural network and experimental measurements. The obtained results show that the EM algorithm coupled with back propogation neural network is an efficient and accurate method in approaching the global minimum of surface roughness in face milling.

Gas Detection via Machine Learning

We present an Electronic Nose (ENose), which is aimed at identifying the presence of one out of two gases, possibly detecting the presence of a mixture of the two. Estimation of the concentrations of the components is also performed for a volatile organic compound (VOC) constituted by methanol and acetone, for the ranges 40-400 and 22-220 ppm (parts-per-million), respectively. Our system contains 8 sensors, 5 of them being gas sensors (of the class TGS from FIGARO USA, INC., whose sensing element is a tin dioxide (SnO2) semiconductor), the remaining being a temperature sensor (LM35 from National Semiconductor Corporation), a humidity sensor (HIH–3610 from Honeywell), and a pressure sensor (XFAM from Fujikura Ltd.). Our integrated hardware–software system uses some machine learning principles and least square regression principle to identify at first a new gas sample, or a mixture, and then to estimate the concentrations. In particular we adopt a training model using the Support Vector Machine (SVM) approach with linear kernel to teach the system how discriminate among different gases. Then we apply another training model using the least square regression, to predict the concentrations. The experimental results demonstrate that the proposed multiclassification and regression scheme is effective in the identification of the tested VOCs of methanol and acetone with 96.61% correctness. The concentration prediction is obtained with 0.979 and 0.964 correlation coefficient for the predicted versus real concentrations of methanol and acetone, respectively.

Solving Differential's Equation of Carrier Load on Semiconductor

The most suitable Semiconductor detector, Cadmium Zinc Teloraid , has unique properties because of high Atomic number and wide Brand Gap . It has been tried in this project with different processes such as Lead , Diffusion , Produce and Recombination , effect of Trapping and injection carrier of CdZnTe , to get hole and then present a complete answer of it . Then we should investigate the movement of carrier ( Electron – Hole ) by using above answer.

Comparative Analysis of Transient-Fault Tolerant Schemes for Network on Chips

Network on a chip (NoC) has been proposed as a viable solution to counter the inefficiency of buses in the current VLSI on-chip interconnects. However, as the silicon chip accommodates more transistors, the probability of transient faults is increasing, making fault tolerance a key concern in scaling chips. In packet based communication on a chip, transient failures can corrupt the data packet and hence, undermine the accuracy of data communication. In this paper, we present a comparative analysis of transient fault tolerant techniques including end-to-end, node-by-node, and stochastic communication based on flooding principle.

Loss Analysis of Half Bridge DC-DC Converters in High-Current and Low-Voltage Applications

In this paper, half bridge DC-DC converters with transformer isolation presented in the literature are analyzed for highcurrent and low-voltage applications under the same operation conditions, and compared in terms of losses and efficiency. The conventional and improved half-bridge DC-DC converters are simulated, and current and voltage waveforms are obtained for input voltage Vdc=500V, output current IO=450A, output voltage VO=38V and switching frequency fS=20kHz. IGBTs are used as power semiconductor switches. The power losses of the semiconductor devices are calculated from current and voltage waveforms. From simulation results, it is seen that the capacitor switched half bridge converter has the best efficiency value, and can be preferred at high power and high frequency applications.

Structural and Optical Properties ofInxAlyGa1-x-yN Quaternary Alloys

Quaternary InxAlyGa1-x-yN semiconductors have attracted much research interest because the use of this quaternary offer the great flexibility in tailoring their band gap profile while maintaining their lattice-matching and structural integrity. The structural and optical properties of InxAlyGa1-x-yN alloys grown by molecular beam epitaxy (MBE) is presented. The structural quality of InxAlyGa1-x-yN layers was characterized using high-resolution X-ray diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN films had wurtzite structure and without phase separation. As the In composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN peak gradually decreases, indicating the increase in the lattice constant c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with increasing In composition from 0 to 0.04, that could indicate the decrease of quality of the samples due to point defects leading to non-uniformity of the epilayers. UV-VIS spectroscopy have been used to study the energy band gap of InxAlyGa1-x-yN. As the indium (In) compositions increases, the energy band gap decreases. However, for InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a sudden increase in energy. This is probably due to local alloy compositional fluctuations in the epilayer. The bowing parameter which appears also to be very sensitive on In content is investigated and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From photoluminescence (PL) measurement, green luminescence (GL) appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm and it become more pronounced as the In composition (x) increased, which is believed cause by gallium vacancies and related to isolated native defects.

Electric Field and Potential Distributions along Surface of Silicone Rubber Polymer Insulators Using Finite Element Method

This paper presents the simulation the results of electric field and potential distributions along surface of silicone rubber polymer insulators. Near the same leakage distance subjected to 15 kV in 50 cycle salt fog ageing test, alternate sheds silicone rubber polymer insulator showed better contamination performance than straight sheds silicone rubber polymer insulator. Severe surface ageing was observed on the straight sheds insulator. The objective of this work is to elucidate that electric field distribution along straight sheds insulator higher than alternate shed insulator in salt fog ageing test. Finite element method (FEM) is adopted for this work. The simulation results confirmed the experimental data, as well.

Effective Scheduling of Semiconductor Manufacturing using Simulation

The process of wafer fabrication is arguably the most technologically complex and capital intensive stage in semiconductor manufacturing. This large-scale discrete-event process is highly reentrant, and involves hundreds of machines, restrictions, and processing steps. Therefore, production control of wafer fabrication facilities (fab), specifically scheduling, is one of the most challenging problems that this industry faces. Dispatching rules have been extensively applied to the scheduling problems in semiconductor manufacturing. Moreover, lot release policies are commonly used in this manufacturing setting to further improve the performance of such systems and reduce its inherent variability. In this work, simulation is used in the scheduling of re-entrant flow shop manufacturing systems with an application in semiconductor wafer fabrication; where, a simulation model has been developed for the Intel Five-Machine Six Step Mini-Fab using the ExtendTM simulation environment. The Mini-Fab has been selected as it captures the challenges involved in scheduling the highly re-entrant semiconductor manufacturing lines. A number of scenarios have been developed and have been used to evaluate the effect of different dispatching rules and lot release policies on the selected performance measures. Results of simulation showed that the performance of the Mini-Fab can be drastically improved using a combination of dispatching rules and lot release policy.

Improvement of Photoluminescence Uniformity of Porous Silicon by using Stirring Anodization Process

The electrolyte stirring method of anodization etching process for manufacturing porous silicon (PS) is reported in this work. Two experimental setups of nature air stirring (PS-ASM) and electrolyte stirring (PS-ESM) are employed to clarify the influence of stirring mechanisms on electrochemical etching process. Compared to traditional fabrication without any stirring apparatus (PS-TM), a large plateau region of PS surface structure is obtained from samples with both stirring methods by the 3D-profiler measurement. Moreover, the light emission response is also improved by both proposed electrolyte stirring methods due to the cycling force in electrolyte could effectively enhance etch-carrier distribution while the electrochemical etching process is made. According to the analysis of statistical calculation of photoluminescence (PL) intensity, lower standard deviations are obtained from PS-samples with studied stirring methods, i.e. the uniformity of PL-intensity is effectively improved. The calculated deviations of PL-intensity are 93.2, 74.5 and 64, respectively, for PS-TM, PS-ASM and PS-ESM.