Abstract: There are a many of needs for the development of
SiC-based hydrogen sensor for harsh environment applications. We
fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors
with MOS capacitor structure for high temperature process monitoring
and leak detection applications in such automotive, chemical and
petroleum industries as well as direct monitoring of combustion
processes. In this work, we used silicon carbide (SiC) as a substrate to
replace silicon which operating temperatures are limited to below
200°C. Tantalum oxide was investigated as dielectric layer which has
high permeability for hydrogen gas and high dielectric permittivity,
compared with silicon dioxide or silicon nitride. Then, electrical
response properties, such as I-V curve and dependence of capacitance
on hydrogen concentrations were analyzed in the temperature ranges
of room temperature to 500°C for performance evaluation of the
sensor.
Abstract: Tungsten trioxide has been prepared by using P-PTA
as a precursor on alumina substrates by spin coating method.
Palladium introduced on WO3 film via electrolysis deposition by
using palladium chloride as catalytic precursor. The catalytic
precursor was introduced on the series of films with different
morphologies. X-ray diffractometry (XRD), Scanning electron
microscopy (SEM) and XPS were applied to analyze structure and
morphology of the fabricated thin films. Then we measured variation
of samples- electrical conductivity of pure and Pd added films in air
and diluted hydrogen. Addition of Pd resulted in a remarkable
improvement of the hydrogen sensing properties of WO3 by detection
of Hydrogen below 1% at room temperature. Also variation of the
electrical conductivity in the presence of diluted hydrogen revealed
that response of samples depends rather strongly on the palladium
configuration on the surface.