High Temperature Hydrogen Sensors Based On Pd/Ta2O5/SiC MOS Capacitor
There are a many of needs for the development of
SiC-based hydrogen sensor for harsh environment applications. We
fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors
with MOS capacitor structure for high temperature process monitoring
and leak detection applications in such automotive, chemical and
petroleum industries as well as direct monitoring of combustion
processes. In this work, we used silicon carbide (SiC) as a substrate to
replace silicon which operating temperatures are limited to below
200°C. Tantalum oxide was investigated as dielectric layer which has
high permeability for hydrogen gas and high dielectric permittivity,
compared with silicon dioxide or silicon nitride. Then, electrical
response properties, such as I-V curve and dependence of capacitance
on hydrogen concentrations were analyzed in the temperature ranges
of room temperature to 500°C for performance evaluation of the
sensor.
[1] Y. M. Wong, W. P. Kang, J. Davison, A. Wisitsora, and K. L. Soh, "A
novel microelectronic gas sensor utilizing carbon nanotubes for hydrogen
gas detection", Sens. Actuators B, vol. 93, pp. 327-332, 2003
[2] S. J. Kim, "The effect on the gas selectivity of CNT-based gas sensors by
binder in SWNT/silane sol solution", J. of IEEE Sensors, vol. 10, pp.
3505-3508, 2009
[3] G. Eranna, B.C. Joshi, D.P. Runthala, and R.P. Gupta, "Oxide materials
for development of integrated gas sensors- a comprehensive review",
Critical Rev. in Sol. Stat. and Mater. Sci., vol. 29, pp. 111-188, 2004
[4] L. Promsong, and M. Sriyudthsak, "Thin tin-oxide film alcohol-gas
sensor, Sens. Actuators B, vol. 25, pp. 504-506, 1995
[5] A. Trinchi, S. Kandasamy, and W. Wlodarski, "High temperature field
effect hydrogen and hydrocarbon gas sensors based on SiC MOS
devices", Sens. Actuators B, vol. 133, pp. 705-716, 2008
[6] M. T. Soo, K. Y. Cheng, and A. Noor, "Advances of SiC-based MOS
capacitor hydrogen sensors for harsh environment applications", Sens.
Actuators B, vol. 151, pp. 39-55, 2010
[7] J. Yu, G. Chen, C.X. Li, M. Shafiei, J.Z. Ou, J. du Plessis, K.
Kalantar-zadeh, P.T. Lai, and W. Wlodarski, "Hydrogen gas sensing
properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates",
Sens. Actuators A, vol. 172, pp. 9-14, 2011
[8] L.P. Martin, A-Q Pham, R.S. Glass, "Electrochemical hydrogen sensors
for safety monitoring", Solid Stat. Ion., vol. 175, pp. 527-530, 2004
[9] A.L Spetz, A. Baranzahi, P. Tobias, I. Lundstrom, "High temperature
sensors based on metal-insulator-silicon carbide devices", Phys. Stat. Sol.
A, vol. 162, pp. 493-551, 1997
[10] N.G. Wright, and A.B. Horsfall, "SiC sensors:a review", J. of Phys. D:
Appl. Phys., vol. 40, pp. 6345-6354, 2007
[11] R.N. Ghosh, and P. Tobias, "SiC field-effect devices operating at high
temperature", J. of Electron. Mater., vol. 34, pp. 345-350, 2005
[12] C. Chaneliere, J. L. Autran, R.A.B. Devine, and B. Balland, "Tantalum
pentoxide thin films for advanced dielectric applications", Mater. Sci. and
Eng., vol. R22, pp. 269-322, 1998
[1] Y. M. Wong, W. P. Kang, J. Davison, A. Wisitsora, and K. L. Soh, "A
novel microelectronic gas sensor utilizing carbon nanotubes for hydrogen
gas detection", Sens. Actuators B, vol. 93, pp. 327-332, 2003
[2] S. J. Kim, "The effect on the gas selectivity of CNT-based gas sensors by
binder in SWNT/silane sol solution", J. of IEEE Sensors, vol. 10, pp.
3505-3508, 2009
[3] G. Eranna, B.C. Joshi, D.P. Runthala, and R.P. Gupta, "Oxide materials
for development of integrated gas sensors- a comprehensive review",
Critical Rev. in Sol. Stat. and Mater. Sci., vol. 29, pp. 111-188, 2004
[4] L. Promsong, and M. Sriyudthsak, "Thin tin-oxide film alcohol-gas
sensor, Sens. Actuators B, vol. 25, pp. 504-506, 1995
[5] A. Trinchi, S. Kandasamy, and W. Wlodarski, "High temperature field
effect hydrogen and hydrocarbon gas sensors based on SiC MOS
devices", Sens. Actuators B, vol. 133, pp. 705-716, 2008
[6] M. T. Soo, K. Y. Cheng, and A. Noor, "Advances of SiC-based MOS
capacitor hydrogen sensors for harsh environment applications", Sens.
Actuators B, vol. 151, pp. 39-55, 2010
[7] J. Yu, G. Chen, C.X. Li, M. Shafiei, J.Z. Ou, J. du Plessis, K.
Kalantar-zadeh, P.T. Lai, and W. Wlodarski, "Hydrogen gas sensing
properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates",
Sens. Actuators A, vol. 172, pp. 9-14, 2011
[8] L.P. Martin, A-Q Pham, R.S. Glass, "Electrochemical hydrogen sensors
for safety monitoring", Solid Stat. Ion., vol. 175, pp. 527-530, 2004
[9] A.L Spetz, A. Baranzahi, P. Tobias, I. Lundstrom, "High temperature
sensors based on metal-insulator-silicon carbide devices", Phys. Stat. Sol.
A, vol. 162, pp. 493-551, 1997
[10] N.G. Wright, and A.B. Horsfall, "SiC sensors:a review", J. of Phys. D:
Appl. Phys., vol. 40, pp. 6345-6354, 2007
[11] R.N. Ghosh, and P. Tobias, "SiC field-effect devices operating at high
temperature", J. of Electron. Mater., vol. 34, pp. 345-350, 2005
[12] C. Chaneliere, J. L. Autran, R.A.B. Devine, and B. Balland, "Tantalum
pentoxide thin films for advanced dielectric applications", Mater. Sci. and
Eng., vol. R22, pp. 269-322, 1998
@article{"International Journal of Information, Control and Computer Sciences:59895", author = "J. H. Choi and S. J. Kim and M. S. Jung and S. J. Kim and S. J. Joo and S. C. Kim", title = "High Temperature Hydrogen Sensors Based On Pd/Ta2O5/SiC MOS Capacitor", abstract = "There are a many of needs for the development of
SiC-based hydrogen sensor for harsh environment applications. We
fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors
with MOS capacitor structure for high temperature process monitoring
and leak detection applications in such automotive, chemical and
petroleum industries as well as direct monitoring of combustion
processes. In this work, we used silicon carbide (SiC) as a substrate to
replace silicon which operating temperatures are limited to below
200°C. Tantalum oxide was investigated as dielectric layer which has
high permeability for hydrogen gas and high dielectric permittivity,
compared with silicon dioxide or silicon nitride. Then, electrical
response properties, such as I-V curve and dependence of capacitance
on hydrogen concentrations were analyzed in the temperature ranges
of room temperature to 500°C for performance evaluation of the
sensor.", keywords = "High temperature, hydrogen sensor, SiC, Ta2O5 dielectric layer.", volume = "7", number = "6", pages = "818-4", }