Impact of Height of Silicon Pillar on Vertical DG-MOSFET Device

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (VTH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Vibration Reduction Module with Flexure Springs for Personal Tools

In the various working field, vibration may cause injurious to human body. Especially, in case of the vibration which is constantly and repeatedly transferred to the human. That gives serious physical problem, so called, Reynaud phenomenon. In this paper, we propose a vibration transmissibility reduction module with flexure mechanism for personal tools. At first, we select a target personal tool, grass cutter, and measure the level of vibration transmissibility on the hand. And then, we develop the concept design of the module that has stiffness for reduction the vibration transmissibility more than 20%, where the vibration transmissibility is measured with an accelerometer. In addition, the vibration reduction can be enhanced when the interior gap between inner and outer body is filled with silicone gel. This will be verified by the further experiment.

Development of Manufacturing Simulation Model for Semiconductor Fabrication

This research presents the development of simulation modeling for WIP management in semiconductor fabrication. Manufacturing simulation modeling is needed for productivity optimization analysis due to the complex process flows involved more than 35 percent re-entrance processing steps more than 15 times at same equipment. Furthermore, semiconductor fabrication required to produce high product mixed with total processing steps varies from 300 to 800 steps and cycle time between 30 to 70 days. Besides the complexity, expansive wafer cost that potentially impact the company profits margin once miss due date is another motivation to explore options to experiment any analysis using simulation modeling. In this paper, the simulation model is developed using existing commercial software platform AutoSched AP, with customized integration with Manufacturing Execution Systems (MES) and Advanced Productivity Family (APF) for data collections used to configure the model parameters and data source. Model parameters such as processing steps cycle time, equipment performance, handling time, efficiency of operator are collected through this customization. Once the parameters are validated, few customizations are made to ensure the prior model is executed. The accuracy for the simulation model is validated with the actual output per day for all equipments. The comparison analysis from result of the simulation model compared to actual for achieved 95 percent accuracy for 30 days. This model later was used to perform various what if analysis to understand impacts on cycle time and overall output. By using this simulation model, complex manufacturing environment like semiconductor fabrication (fab) now have alternative source of validation for any new requirements impact analysis.

Energy Efficiency Testing of Fluorescent and WOLED (White Organic LED)

WOLED is widely used as lighting for high efficacy and little power consumption. In this research, power factor testing between WOLED and fluorescent lamp to see which one is more efficient in consuming energy. Since both lamps use semiconductor components, so calculation of the power factor need to consider the effects of harmonics. Harmonic make bigger losses. The study is conducted by comparing the value of the power factor regardless of harmonics (DPF) and also by included the harmonics (TPF). The average value of DPF of fluorescent is 0.953 while WOLED is 0.972. The average value of TPF of fluorescent is 0.717 whereas WOLED is 0.933. So from the review of power factor WOLED is more energy efficient than fluorescent lamp.

Design of Reliable and Low Cost Substrate Heater for Thin Film Deposition

The substrate heater designed for this investigation is a front side substrate heating system. It consists of 10 conventional tungsten halogen lamps and an aluminum reflector, total input electrical power of 5 kW. The substrate is heated by means of a radiation from conventional tungsten halogen lamps directed to the substrate through a glass window. This design allows easy replacement of the lamps and maintenance of the system. Within 2 to 6 minutes the substrate temperature reaches 500 to 830 C by varying the vertical distance between the glass window and the substrate holder. Moreover, the substrate temperature can be easily controlled by controlling the input power to the system. This design gives excellent opportunity to deposit many deferent films at deferent temperatures in the same deposition time. This substrate heater was successfully used for Chemical Vapor Deposition (CVD) of many thin films, such as Silicon, iron, etc.

Silicon-Waveguide Based Silicide Schottky- Barrier Infrared Detector for on-Chip Applications

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

The Hardware Implementation of a Novel Genetic Algorithm

This paper presents a novel genetic algorithm, termed the Optimum Individual Monogenetic Algorithm (OIMGA) and describes its hardware implementation. As the monogenetic strategy retains only the optimum individual, the memory requirement is dramatically reduced and no crossover circuitry is needed, thereby ensuring the requisite silicon area is kept to a minimum. Consequently, depending on application requirements, OIMGA allows the investigation of solutions that warrant either larger GA populations or individuals of greater length. The results given in this paper demonstrate that both the performance of OIMGA and its convergence time are superior to those of existing hardware GA implementations. Local convergence is achieved in OIMGA by retaining elite individuals, while population diversity is ensured by continually searching for the best individuals in fresh regions of the search space.

A Generic and Extensible Spidergon NoC

The Globally Asynchronous Locally Synchronous Network on Chip (GALS NoC) is the most efficient solution that provides low latency transfers and power efficient System on Chip (SoC) interconnect. This study presents a GALS and generic NoC architecture based on a configurable router. This router integrates a sophisticated dynamic arbiter, the wormhole routing technique and can be configured in a manner that allows it to be used in many possible NoC topologies such as Mesh 2-D, Tree and Polygon architectures. This makes it possible to improve the quality of service (QoS) required by the proposed NoC. A comparative performances study of the proposed NoC architecture, Tore architecture and of the most used Mesh 2D architecture is performed. This study shows that Spidergon architecture is characterised by the lower latency and the later saturation. It is also shown that no matter what the number of used links is raised; the Links×Diameter product permitted by the Spidergon architecture remains always the lower. The only limitation of this architecture comes from it-s over cost in term of silicon area.

Effect of Concentration of Sodium Borohydrate on the Synthesis of Silicon Nanoparticles via Microemulsion Route

The effect of concentration of reduction agent of sodium borohydrate (NaBH4) on the properties of silicon nanoparticles synthesized via microemulsion route is reported. In this work, the concentration of the silicon tetrachloride (SiCl4) that served as silicon source with sodium hydroxide (NaOH) and polyethylene glycol (PEG) as stabilizer and surfactant, respectively, are keep fixed. Four samples with varied concentration of NaBH4 from 0.05 M to 0.20 M were synthesized. It was found that the lowest concentration of NaBH4 gave better formation of silicon nanoparticles.

Preparation of Li Ion Conductive Ceramics via Liquid Process

Li1.5Al0.5Ti1.5 (PO4)3(LATP) has received much attention as a solid electrolyte for lithium batteries. In this study, the LATP solid electrolyte is prepared by the co-precipitation method using Li3PO4 as a Li source. The LATP is successfully prepared and the Li ion conductivities of bulk (inner crystal) and total (inner crystal and grain boundary) are 1.1 × 10-3 and 1.1 × 10-4 S cm-1, respectively. These values are comparable to the reported values, in which Li2C2O4 is used as the Li source. It is conclude that the LATP solid electrolyte can be prepared by the co-precipitation method using Li3PO4 as the Li source and this procedure has an advantage in mass production over previous procedure using Li2C2O4 because Li3PO4 is lower price reagent compared with Li2C2O4.

Plasmonic Absorption Enhancement in Au/CdS Nanocomposite

Composite nanostructures of metal core/semiconductor shell (Au/CdS) configuration were prepared using organometalic method. UV-Vis spectra for the Au/CdS colloids show initially two well separated bands, corresponding to surface plasmon of the Au core, and the exciton of CdS shell. The absorption of CdS shell is enhanced, while the Au plasmon band is suppressed as the shell thickness increases. The shell sizes were estimated from the optical spectra using the effective mass approximation model (EMA), and compared to the sizes of the Au core and CdS shell measured by high resolution transmission electron microscope (HRTEM). The changes in the absorption features are discussed in terms of gradual increase in the coupling strength of the Au core surface plasmon and the exciton in the CdS. leading to charge transfer and modification of electron oscillation in Au core.

New Technologies for Modeling of Gas Turbine Cooled Blades

In contrast to existing methods which do not take into account multiconnectivity in a broad sense of this term, we develop mathematical models and highly effective combination (BIEM and FDM) numerical methods of calculation of stationary and cvazistationary temperature field of a profile part of a blade with convective cooling (from the point of view of realization on PC). The theoretical substantiation of these methods is proved by appropriate theorems. For it, converging quadrature processes have been developed and the estimations of errors in the terms of A.Ziqmound continuity modules have been received. For visualization of profiles are used: the method of the least squares with automatic conjecture, device spline, smooth replenishment and neural nets. Boundary conditions of heat exchange are determined from the solution of the corresponding integral equations and empirical relationships. The reliability of designed methods is proved by calculation and experimental investigations heat and hydraulic characteristics of the gas turbine 1st stage nozzle blade

Application of Formyl-TIPPCu (II) for Temperature and Light Sensing

Effect of temperature and light was investigated on a thin film of organic semiconductor formyl-TIPPCu(II) deposited on a glass substrate with preliminary evaporated gold electrodes. The electrical capacitance and resistance of the fabricated device were evaluated under the effect of temperature and light. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temperature from 27 to 1870C, while under illumination up to 25000 lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive sensor increased continuously by 13.2 times as compared to dark conditions.

Nonlinear Thermal Expansion Model for SiC/Al

The thermal expansion behaviour of silicon carbide (SCS-2) fibre reinforced 6061 aluminium matrix composite subjected to the influenced thermal mechanical cycling (TMC) process were investigated. The thermal stress has important effect on the longitudinal thermal expansion coefficient of the composites. The present paper used experimental data of the thermal expansion behaviour of a SiC/Al composite for temperatures up to 370°C, in which their data was used for carrying out modelling of theoretical predictions.

Effects of Double Delta Doping on Millimeter and Sub-millimeter Wave Response of Two-Dimensional Hot Electrons in GaAs Nanostructures

Carrier mobility has become the most important characteristic of high speed low dimensional devices. Due to development of very fast switching semiconductor devices, speed of computer and communication equipment has been increasing day by day and will continue to do so in future. As the response of any device depends on the carrier motion within the devices, extensive studies of carrier mobility in the devices has been established essential for the growth in the field of low dimensional devices. Small-signal ac transport of degenerate two-dimensional hot electrons in GaAs quantum wells is studied here incorporating deformation potential acoustic, polar optic and ionized impurity scattering in the framework of heated drifted Fermi-Dirac carrier distribution. Delta doping is considered in the calculations to investigate the effects of double delta doping on millimeter and submillimeter wave response of two dimensional hot electrons in GaAs nanostructures. The inclusion of delta doping is found to enhance considerably the two dimensional electron density which in turn improves the carrier mobility (both ac and dc) values in the GaAs quantum wells thereby providing scope of getting higher speed devices in future.

Nanocrystalline Na0.1V2O5.nH2O Xerogel Thin Film for Gas Sensing

Nanocrystalline thin film of Na0.1V2O5.nH2O xerogel obtained by sol gel synthesis was used as gas sensor. Gas sensing properties of different gases such as hydrogen, petroleum and humidity were investigated. Applying XRD and TEM the size of the nanocrystals is found to be 7.5 nm. SEM shows a highly porous structure with submicron meter-sized voids present throughout the sample. FTIR measurement shows different chemical groups identifying the obtained series of gels. The sample was n-type semiconductor according to the thermoelectric power and electrical conductivity. It can be seen that the sensor response curves from 130oC to 150oC show a rapid increase in sensitivity for all types of gas injection, low response values for heating period and the rapid high response values for cooling period. This result may suggest that this material is able to act as gas sensor during the heating and cooling process.

Lightweight Robotic Material Handling in Photovoltaic Module Manufacturing-Silicon Wafer and Thin Film Technologies

Today, the central role of industrial robots in automation in general and in material handling in particular is crystal clear. Based on the current status of Photovoltaics and by focusing on lightweight material handling, PV industry has turned into a potential candidate for introducing a fresh “pick and place" robot technology. Thus, to examine the industry needs in this regard, firstly the best suited applications for such robotic automation,and then the essential prerequisites in PV industry should be identified. The objective of this paper is to present holistic views on the industry trends, general automation status and existing challenges facing lightweight robotic material handling in PV Silicon Wafer and Thin Film technologies. The results of this study show that currently no uniform pick and place solution prevails among PV Silicon Wafer manufacturers and the industry calls for a new robot solution to satisfy its needs in new directions.

RAPD Analysis of Genetic Diversity of Castor Bean

The aim of this work was to detect genetic variability among the set of 40 castor genotypes using 8 RAPD markers. Amplification of genomic DNA of 40 genotypes, using RAPD analysis, yielded in 66 fragments, with an average of 8.25 polymorphic fragments per primer. Number of amplified fragments ranged from 3 to 13, with the size of amplicons ranging from 100 to 1200 bp. Values of the polymorphic information content (PIC) value ranged from 0.556 to 0.895 with an average of 0.784 and diversity index (DI) value ranged from 0.621 to 0.896 with an average of 0.798. The dendrogram based on hierarchical cluster analysis using UPGMA algorithm was prepared and analyzed genotypes were grouped into two main clusters and only two genotypes could not be distinguished. Knowledge on the genetic diversity of castor can be used for future breeding programs for increased oil production for industrial uses.

Tomato Fruit Quality of Different Cultivars Growth in Lithuania

Two cultivars ('Rutuliai', 'Saint Perrie') and five hybrids ('Tolstoi', 'Brooklyn', 'Tocayo', 'Benito', 'Tourist') of edible tomato (Lycopersicon esculentum Mill.) were investigated at the LRCAF Institute of Horticulture. The following fruit quality parameters were evaluated: the amount of lycopene, β-carotene, ascorbic acid, total and inverted sugar, sucrose, dry matter soluble solids in fresh tomato matter, also were determined fruit skin and flesh firmness, color indexes (CIE L*a*b*) and calculated hue angle (h°) with chroma (C).

Vertical GAA Silicon Nanowire Transistor with Impact of Temperature on Device Parameters

In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density.