Design of Reliable and Low Cost Substrate Heater for Thin Film Deposition
The substrate heater designed for this investigation is a front side substrate heating system. It consists of 10 conventional tungsten halogen lamps and an aluminum reflector, total input electrical power of 5 kW. The substrate is heated by means of a radiation from conventional tungsten halogen lamps directed to the substrate through a glass window. This design allows easy replacement of the lamps and maintenance of the system. Within 2 to 6 minutes the substrate temperature reaches 500 to 830 C by varying the vertical distance between the glass window and the substrate holder. Moreover, the substrate temperature can be easily controlled by controlling the input power to the system. This design gives excellent opportunity to deposit many deferent films at deferent temperatures in the same deposition time. This substrate heater was successfully used for Chemical Vapor Deposition (CVD) of many thin films, such as Silicon, iron, etc.
[1] F. Incropera and D. DeWitt, "Fundamentals of Heat and Mass
Transfer", John Willy & Sons, 5th.ed. , 2001.
[2] Matthew Sweetland, John H. Lienhard V, "Rapid IR Heating of
Electronic Components in the Testing Cycle", Proc. 35th National Heat
Transfer Conf., California, 2001.
[3] J. Y. Choi, H. M. Do, "A learning Approach of Wafer Temperature
Control in Rapid Thermal Processing System", IEEE Trans.
Semiconductor Manufacturing, vol. 14, No. 1, Feb. 2001.
[4] P. Xu, J. Shao, Y. Yen, "Experimental Study of Substrate
Temperature", Applied Optics, Vol. 28, No. 14, July 1989.
[5] S. Hung, C. Chao, C. Hsu, "Lamp Design for Fast Cooling of Rapid
Thermal Processes with a Two-Zone Lamp Using a Step Cooling
Process", Semicond. Sci. and Technol. 20, 72-79, 2005.
[6] A. Bouteville, "Numerical Simulation Applied to Chemical Vapor
Deposition Process. Rapid Thermal CVD and Spray CVD", J.
Optoelectron. Adv. Mater. Vol. 7, No. 2, 599-606, April 2005.
[7] M. Lindstam, M. Boman, K. Piglmayer, "Halogen Lamp-assisted High
Rate Deposition of both Hard and Elastic Carbon Films from CH2I2",
Nucl. Instr. and Meth. In Phys. B 192, 274-279, 2002.
[8] P. Logerais, M. Girtan. A. Bouteville, "RTLPCVD Modeling: Steadystate
Simulations", (EUROCVD-15, Bochum, Germany), ECS
Proceeding Vol. 2005-09, 49-56, 2005.
[9] S. Krumidieck and H. Jung, "Substrate Heater Design Investigation for
Uniform Temperature in a Cold-Wall Low Pressure Reactor",
(EUROCVD-15, Bochum, Germany), ECS Proceeding Vol. 2005-09,
13-20, 2005.
[10] Travis L. Turner and Robert L. Ash, "Numerical and Experimental
Analyses of the Radiant Heat Flux Produced by Quartz Heating
Systems", NASA Technical Paper 3387, March 1994.
[11] S. A. Norman, C. Schaper, and S. Boyd, "Improvement of Temperature
Uniformity in Rapid Thermal Processing Systems using Multivariable
Control", Mat. Res. Soc. Proc., 1991.
[12] M. Pettersson, S. Stenstrom, "Modeling of an electric IR heater at
transient and steady state conditions Part II: Modeling a paper dryer",
Intl. J. Heat Mass Trans., 43, 1223-1232, 2000.
[13] H. Chang, R. A. Adomaitisa, J. Kidder and G. Rubloff, "Influence of
gas composition on wafer temperature in a tungsten chemical vapor
deposition reactor: Experimental measurements, model development,
and parameter identification", J. Vac. Sci. Technol. B, Vol. 19, No. 1,
Jan./Feb 2001.
[14] M. Lindstam, O. Wanstrand, M. Boman and K. Piglmayer, "Mechanical
and tribological aspects on a-C films deposited by lamp assisted
chemical vapor deposition", Surf. Coat. Technol. 138, 264-268, 2001.
[15] A. T. Fiory "Methods in Rapid thermal Annealing", Proceedings of RTP
2000, 8th. Int. Conf. on Advanced Thermal Processing of
Semiconductors, Sept. 20 - 22, 15-25, 2000.
[16] S. Moralesi and B. Dahhous, "Temperature uniformity in RTP using
MIMO Adaptive Control", Int. J. Adapt. Control Signal Process. 12,
227-245, 1998.
[1] F. Incropera and D. DeWitt, "Fundamentals of Heat and Mass
Transfer", John Willy & Sons, 5th.ed. , 2001.
[2] Matthew Sweetland, John H. Lienhard V, "Rapid IR Heating of
Electronic Components in the Testing Cycle", Proc. 35th National Heat
Transfer Conf., California, 2001.
[3] J. Y. Choi, H. M. Do, "A learning Approach of Wafer Temperature
Control in Rapid Thermal Processing System", IEEE Trans.
Semiconductor Manufacturing, vol. 14, No. 1, Feb. 2001.
[4] P. Xu, J. Shao, Y. Yen, "Experimental Study of Substrate
Temperature", Applied Optics, Vol. 28, No. 14, July 1989.
[5] S. Hung, C. Chao, C. Hsu, "Lamp Design for Fast Cooling of Rapid
Thermal Processes with a Two-Zone Lamp Using a Step Cooling
Process", Semicond. Sci. and Technol. 20, 72-79, 2005.
[6] A. Bouteville, "Numerical Simulation Applied to Chemical Vapor
Deposition Process. Rapid Thermal CVD and Spray CVD", J.
Optoelectron. Adv. Mater. Vol. 7, No. 2, 599-606, April 2005.
[7] M. Lindstam, M. Boman, K. Piglmayer, "Halogen Lamp-assisted High
Rate Deposition of both Hard and Elastic Carbon Films from CH2I2",
Nucl. Instr. and Meth. In Phys. B 192, 274-279, 2002.
[8] P. Logerais, M. Girtan. A. Bouteville, "RTLPCVD Modeling: Steadystate
Simulations", (EUROCVD-15, Bochum, Germany), ECS
Proceeding Vol. 2005-09, 49-56, 2005.
[9] S. Krumidieck and H. Jung, "Substrate Heater Design Investigation for
Uniform Temperature in a Cold-Wall Low Pressure Reactor",
(EUROCVD-15, Bochum, Germany), ECS Proceeding Vol. 2005-09,
13-20, 2005.
[10] Travis L. Turner and Robert L. Ash, "Numerical and Experimental
Analyses of the Radiant Heat Flux Produced by Quartz Heating
Systems", NASA Technical Paper 3387, March 1994.
[11] S. A. Norman, C. Schaper, and S. Boyd, "Improvement of Temperature
Uniformity in Rapid Thermal Processing Systems using Multivariable
Control", Mat. Res. Soc. Proc., 1991.
[12] M. Pettersson, S. Stenstrom, "Modeling of an electric IR heater at
transient and steady state conditions Part II: Modeling a paper dryer",
Intl. J. Heat Mass Trans., 43, 1223-1232, 2000.
[13] H. Chang, R. A. Adomaitisa, J. Kidder and G. Rubloff, "Influence of
gas composition on wafer temperature in a tungsten chemical vapor
deposition reactor: Experimental measurements, model development,
and parameter identification", J. Vac. Sci. Technol. B, Vol. 19, No. 1,
Jan./Feb 2001.
[14] M. Lindstam, O. Wanstrand, M. Boman and K. Piglmayer, "Mechanical
and tribological aspects on a-C films deposited by lamp assisted
chemical vapor deposition", Surf. Coat. Technol. 138, 264-268, 2001.
[15] A. T. Fiory "Methods in Rapid thermal Annealing", Proceedings of RTP
2000, 8th. Int. Conf. on Advanced Thermal Processing of
Semiconductors, Sept. 20 - 22, 15-25, 2000.
[16] S. Moralesi and B. Dahhous, "Temperature uniformity in RTP using
MIMO Adaptive Control", Int. J. Adapt. Control Signal Process. 12,
227-245, 1998.
@article{"International Journal of Mechanical, Industrial and Aerospace Sciences:59222", author = "Ali Eltayeb Muhsin and Mohamed Elhadi Elsari", title = "Design of Reliable and Low Cost Substrate Heater for Thin Film Deposition", abstract = "The substrate heater designed for this investigation is a front side substrate heating system. It consists of 10 conventional tungsten halogen lamps and an aluminum reflector, total input electrical power of 5 kW. The substrate is heated by means of a radiation from conventional tungsten halogen lamps directed to the substrate through a glass window. This design allows easy replacement of the lamps and maintenance of the system. Within 2 to 6 minutes the substrate temperature reaches 500 to 830 C by varying the vertical distance between the glass window and the substrate holder. Moreover, the substrate temperature can be easily controlled by controlling the input power to the system. This design gives excellent opportunity to deposit many deferent films at deferent temperatures in the same deposition time. This substrate heater was successfully used for Chemical Vapor Deposition (CVD) of many thin films, such as Silicon, iron, etc.
", keywords = "CVD, Halogen Lamp, Substrate Heater, Thin Films.", volume = "6", number = "8", pages = "1680-6", }
