Abstract: Many sustainable approaches to generate electric energy have emerged in the last few decades; one of them is through solar cells. Yet, this also has the disadvantage of highly polluting inorganic semiconductor manufacturing processes. Therefore, the use of molecular semiconductors must be considered. In this work, allene compounds C24H26O4 and C24H26O5 were used as dopants to manufacture semiconductor films based on PbPc by high-vacuum evaporation technique. IR spectroscopy was carried out to determine the phase and any significant chemical changes which may occur during the thermal evaporation. According to UV-visible spectroscopy and Tauc’s model, the deposition process generated thin films with an activation energy range of 1.47 eV to 1.55 eV for direct transitions and 1.29 eV to 1.33 eV for indirect transitions. These values place the manufactured films within the range of low bandgap semiconductors. The flexible devices were manufactured: polyethylene terephthalate (PET), Indium tin oxide (ITO)/organic semiconductor/Cubic Close Packed (CCP). The characterization of the devices was carried out by evaluating electrical conductivity using the four-probe collinear method. I-V curves were obtained under different lighting conditions at room temperature. OS1 (PbPc/C24H26O4) showed an Ohmic behavior, while OS2 (PbPc/C24H26O5) reached higher current values at lower voltages. The results obtained show that the semiconductor devices doped with allene compounds can be used in the manufacture of optoelectronic devices.
Abstract: In this work, the influence of temperature on the
different parameters of solar cells based on organic semiconductors
are studied. The short circuit current Isc increases so monotonous
with temperature and then saturates to a maximum value before
decreasing at high temperatures. The open circuit voltage Vco
decreases linearly with temperature. The fill factor FF and efficiency,
which are directly related with Isc and Vco follow the variations of
the letters. The phenomena are explained by the behaviour of the
mobility which is a temperature activated process.
Abstract: In this study we present the effect of elevated
temperatures from 300K to 400K on the electrical properties of
copper Phthalocyanine (CuPc) based organic field effect transistors
(OFET). Thin films of organic semiconductor CuPc (40nm) and
semitransparent Al (20nm) were deposited in sequence, by vacuum
evaporation on a glass substrate with previously deposited Ag source
and drain electrodes with a gap of 40 μm. Under resistive mode of
operation, where gate was suspended it was observed that drain
current of this organic field effect transistor (OFET) show an
increase with temperature. While in grounded gate condition metal
(aluminum) – semiconductor (Copper Phthalocyanine) Schottky
junction dominated the output characteristics and device showed
switching effect from low to high conduction states like Zener diode
at higher bias voltages. This threshold voltage for switching effect
has been found to be inversely proportional to temperature and shows
an abrupt decrease after knee temperature of 360K. Change in
dynamic resistance (Rd = dV/dI) with respect to temperature was
observed to be -1%/K.
Abstract: End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers,DZ-dihexylquarterthiophene (DH-4T) and DZ-dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtained a stable characteristic curve. The field effect mobility, Pwas calculated to be 3.2910-4 cm2/Vs for DH-6T based OTFT; while the DH-4T based OTFT had 1.8810-5 cm2/Vs.KeywordsOrganic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.
Abstract: Effect of temperature and light was investigated on a
thin film of organic semiconductor formyl-TIPPCu(II) deposited on a
glass substrate with preliminary evaporated gold electrodes. The
electrical capacitance and resistance of the fabricated device were
evaluated under the effect of temperature and light. The relative
capacitance of the fabricated sensor increased by 4.3 times by rising
temperature from 27 to 1870C, while under illumination up to 25000
lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive
sensor increased continuously by 13.2 times as compared to dark
conditions.
Abstract: In this article, a high vacuum system for the evaporation of organic semiconductors is introduced and a mathematical model is given. Based on the exact input output linearization a deposition rate controller is designed and tested with different evaporation materials.
Abstract: In this work, an organic compound 5,10,15,20-
Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu)
is studied as an active material for thin film electronic devices. To
investigate the electrical properties of TDTBPPCu, junction of
TDTBPPCu with heavily doped n-Si and Al is fabricated.
TDTBPPCu film was sandwiched between Al and n-Si electrodes.
Various electrical parameters of TDTBPPCu are determined. The
current-voltage characteristics of the junction are nonlinear,
asymmetric and show rectification behavior, which gives the clue of
formation of depletion region. This behavior indicates the potential
of TDTBPPCu for electronics applications. The current-voltage and
capacitance-voltage techniques are used to find the different
electronic parameters.
Abstract: Herein, the organic semiconductor methyl orange
(MO), is investigated for the first time for its electronic applications.
For this purpose, Al/MO/n-Si heterojunction is fabricated through
economical cheap and simple “drop casting” technique. The currentvoltage
(I-V) measurements of the device are made at room
temperature under dark conditions. The I-V characteristics of
Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior
that confirms the formation of diode. The diode parameters such as
rectification ratio (RR), turn on voltage (Vturn on), reverse saturation
current (I0), ideality factor (n), barrier height ( b
f ), series resistance
(Rs) and shunt resistance (Rsh) are determined from I-V curves using
Schottky equations. These values of these parameters are also
extracted and verified by applying Cheung’s functions. The
conduction mechanisms are explained from the forward bias I-V
characteristics using the power law.