Investigation of 5,10,15,20-Tetrakis(3-,5--Di-Tert-Butylphenyl)Porphyrinatocopper(II) for Electronics Applications
In this work, an organic compound 5,10,15,20-
Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu)
is studied as an active material for thin film electronic devices. To
investigate the electrical properties of TDTBPPCu, junction of
TDTBPPCu with heavily doped n-Si and Al is fabricated.
TDTBPPCu film was sandwiched between Al and n-Si electrodes.
Various electrical parameters of TDTBPPCu are determined. The
current-voltage characteristics of the junction are nonlinear,
asymmetric and show rectification behavior, which gives the clue of
formation of depletion region. This behavior indicates the potential
of TDTBPPCu for electronics applications. The current-voltage and
capacitance-voltage techniques are used to find the different
electronic parameters.
[1] T Granlund, T Nyberg, L S Roman, M Svensson, O Inganas, Adv.
Mater. 12 (2000) 269.
[2] D Pede, G Serra, D Derossi, Mater. Sci. & Eng. C 5 (1998) 289.
[3] J A Rogers, Z Bao, M Meier, A Dodabalapur, O J A Schueller, G M
Whitesides, Synth. Met. 115 (2000) 5.
[4] S R Forrest, M E Thompson, Chem. Rev. 107 (2007) 923.
[5] D B Mitzi, K Chondroudis, C R Kagan, IBM J. Res. & Dev. 45 (2001)
29.
[6] C W Tang, S A Van Slyke, Appl. Phys. Lett. 51 (1987) 381.
[7] J H Burroughes, D D C Bradley, A R Brown, R N Marks, K Mackay, R
H Friend, P L Burns, A B Holmes, Nature (London) 347 (1990) 539.
[8] D F Dunbar, T H Richardson, J Hutchinson, C A Hunter, Sens. Actuat.
B 128 (2008) 468.
[9] M Shiraishi, A Makishima, H Inoue, K Soga, J. Non-cryst. solid 259
(1999) 165.
[10] M Saleem, M H Sayyad, K S Karimov, Z Ahmad, M Shah, M Yaseen, I
Khokhar, M Ali, J. Optoelectron. Adv. Mater. 10 (2008) 1468
[11] C Di Natale, D Salimbeni, R Paolesse, A Macagnano, A DAmico, Sens.
Actuat. B 65 (2000) 220.
[12] E H Rhoderick, Metal Semiconductors Contacts, Oxford Univerisity
Press, 1978.
[13] M M El-Nahass, K F Abd-El-Rahman, A A M Farag, A A A Darwish,
Org. Electron. 6 (2005) 129.
[14] J C Ranuarez, F J Garcia Sanchez, A Ortiz-Conde, Solid State Electron.
43 (1999) 2129.
[15] M Çakar, M Biber, M Sağlam, A Türüt, J. Polym. Sci. Part B Polym.
Phys. 41 (2003) 1334.
[16] Y J Liu, H Z Yu, J. Phys. Chem. B 107 (2003) 7803.
[17] S M Sze, Physics of Semiconductor Devices, Wiley, New York, 1981.
[1] T Granlund, T Nyberg, L S Roman, M Svensson, O Inganas, Adv.
Mater. 12 (2000) 269.
[2] D Pede, G Serra, D Derossi, Mater. Sci. & Eng. C 5 (1998) 289.
[3] J A Rogers, Z Bao, M Meier, A Dodabalapur, O J A Schueller, G M
Whitesides, Synth. Met. 115 (2000) 5.
[4] S R Forrest, M E Thompson, Chem. Rev. 107 (2007) 923.
[5] D B Mitzi, K Chondroudis, C R Kagan, IBM J. Res. & Dev. 45 (2001)
29.
[6] C W Tang, S A Van Slyke, Appl. Phys. Lett. 51 (1987) 381.
[7] J H Burroughes, D D C Bradley, A R Brown, R N Marks, K Mackay, R
H Friend, P L Burns, A B Holmes, Nature (London) 347 (1990) 539.
[8] D F Dunbar, T H Richardson, J Hutchinson, C A Hunter, Sens. Actuat.
B 128 (2008) 468.
[9] M Shiraishi, A Makishima, H Inoue, K Soga, J. Non-cryst. solid 259
(1999) 165.
[10] M Saleem, M H Sayyad, K S Karimov, Z Ahmad, M Shah, M Yaseen, I
Khokhar, M Ali, J. Optoelectron. Adv. Mater. 10 (2008) 1468
[11] C Di Natale, D Salimbeni, R Paolesse, A Macagnano, A DAmico, Sens.
Actuat. B 65 (2000) 220.
[12] E H Rhoderick, Metal Semiconductors Contacts, Oxford Univerisity
Press, 1978.
[13] M M El-Nahass, K F Abd-El-Rahman, A A M Farag, A A A Darwish,
Org. Electron. 6 (2005) 129.
[14] J C Ranuarez, F J Garcia Sanchez, A Ortiz-Conde, Solid State Electron.
43 (1999) 2129.
[15] M Çakar, M Biber, M Sağlam, A Türüt, J. Polym. Sci. Part B Polym.
Phys. 41 (2003) 1334.
[16] Y J Liu, H Z Yu, J. Phys. Chem. B 107 (2003) 7803.
[17] S M Sze, Physics of Semiconductor Devices, Wiley, New York, 1981.
@article{"International Journal of Chemical, Materials and Biomolecular Sciences:54332", author = "Zubair Ahmad and M. H. Sayyad and M. Yaseen and M. Ali", title = "Investigation of 5,10,15,20-Tetrakis(3-,5--Di-Tert-Butylphenyl)Porphyrinatocopper(II) for Electronics Applications", abstract = "In this work, an organic compound 5,10,15,20-
Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu)
is studied as an active material for thin film electronic devices. To
investigate the electrical properties of TDTBPPCu, junction of
TDTBPPCu with heavily doped n-Si and Al is fabricated.
TDTBPPCu film was sandwiched between Al and n-Si electrodes.
Various electrical parameters of TDTBPPCu are determined. The
current-voltage characteristics of the junction are nonlinear,
asymmetric and show rectification behavior, which gives the clue of
formation of depletion region. This behavior indicates the potential
of TDTBPPCu for electronics applications. The current-voltage and
capacitance-voltage techniques are used to find the different
electronic parameters.", keywords = "P-type, organic semiconductor, Electricalcharacteristics", volume = "5", number = "4", pages = "310-4", }