Effects of Double Delta Doping on Millimeter and Sub-millimeter Wave Response of Two-Dimensional Hot Electrons in GaAs Nanostructures
Carrier mobility has become the most important
characteristic of high speed low dimensional devices. Due to
development of very fast switching semiconductor devices, speed of
computer and communication equipment has been increasing day by
day and will continue to do so in future. As the response of any
device depends on the carrier motion within the devices, extensive
studies of carrier mobility in the devices has been established
essential for the growth in the field of low dimensional devices.
Small-signal ac transport of degenerate two-dimensional hot
electrons in GaAs quantum wells is studied here incorporating
deformation potential acoustic, polar optic and ionized impurity
scattering in the framework of heated drifted Fermi-Dirac carrier
distribution. Delta doping is considered in the calculations to
investigate the effects of double delta doping on millimeter and submillimeter
wave response of two dimensional hot electrons in GaAs
nanostructures. The inclusion of delta doping is found to enhance
considerably the two dimensional electron density which in turn
improves the carrier mobility (both ac and dc) values in the GaAs
quantum wells thereby providing scope of getting higher speed
devices in future.
[1] "Technology roadmap for nanoelectronics," Published by European
Commission IST programme on Future and Emerging Technologies,
Nov. 2000. Available: http://www.cordis.lu/ist/fetnid.htm.
[2] R. Dingle, H. L. Stormer, A. C. Gossard and W. Wiegmann, "Electron
mobilities in modulation-doped semiconductor heterojunction
superlattices," Appl. Phys. Lett., vol. 33, no. 7, pp. 665-667, Oct. 1978.
[3] J. J. Harris, J A Pals and R Woltjer, "Electronic transport in lowdimensional
structures," Rep. Prog. Phys., vol. 52, pp.1217-1266, Oct.
1989.
[4] C T Foxon, J J Harris, D Hilton, J Hewett and C Roberts, "Optimisation
of (Al,Ga)As/GaAs two-dimensional electron gas structures for low
carrier densities & ultra high mobilities at low temperature, "Semicond.
Sci. Technol., vol. 4, pp. 582-595, Apr. 1989.
[5] M. Heiblum, E. E. Mendez and F. Stern, "High mobility electron gas in
selectively doped n:AlGaAs/GaAs heterojunctions," Appl. Phys. Lett.,
vol. 44, no.11, pp. 1064-1066, Jun. 1984
[6] E. F. Schubert, "Delta doping of III-V compound semiconductor:
Fundamental and device applications, "J. Vac. Sci. Technol. A, vol. 87,
no. 3, pp. 2980-2996, May 1990
[7] Guo-Qiang Hai, Nelson Studart and F. M. Peeters, "Electron mobility in
two coupled layers, " Phys. Rev. B, vol. 52, no. 15, pp.11273-11276,
Oct. 1995
[8] P. J. Price, "Two-dimensional electron transport in semiconductor layers.
I. Phonon scattering," Ann. Phys., vol. 133, pp. 217-239, May. 1981.
[9] T. Tsuchiya and T Ando, "Electron-phonon interaction in GaAs/AlAs
superlattices," Phys. Rev. B, vol. 47, no. 12, pp. 7240-7252, Mar. 1993.
[10] T. Tsuchiya and T Ando, "Mobility enhancement in quantum wells by
electronic-state modulation," Phys. Rev. B, vol. 48, no. 7, pp. 4599-4603,
Aug. 1993
[11] Subir Kumar Sarkar, "Effects of wave function modulation on highfrequency
carrier transport in quantum wells under high biasing field,"
Indian J. Phys., vol. 78, no. 7, pp. 535-538, 2004.
[12] X. T Zhu, H. Goronkin, G. N. Maracas, R. Droopad and M. Stroscio, "
Electron mobility enhancement by confining optical phonons in
GaAs/AlAs multiple quantum wells," Appl. Phys. Lett., vol. 60, no. 17,
pp. 2141-2143, Apr. 1992.
[13] J. Pozela, V. Juciene , A. Namajunas and K. Pozela, "Electron mobility
and subband population tuning by a phonon wall inserted in a
semiconductor quantum well, "J. Appl. Phys., vol. 81, no. 4, pp. 1775-
1780, Feb. 1997.
[14] H. Harikawa, H. Sakaki and J. Yoshino, "Concentrations of electrons in
selectively doped GaAlAs/GaAs heterojunction and its dependence on
spacer layer thickness and gate electric field," Appl. Phys. Lett., vol. 45,
no. 3, pp. 253-255, Aug. 1984.
[15] L. Chico, W Laskolski, R Perez-Alvarez and F Garcia Moliner, "On the
theory of GaAs-based quantum wells with external -doping, J. Phys.:
Condens. Matters, vol. 5, pp.9069-9076 Aug. 1993.
[16] H.J Gossmann and E.F. Schubert, "Delta doping in Silicone," Solid
State and Material Sc., vol. 18, no. 1, pp. 1-67, Jan. 1993
[17] Ikai Lo, Y. C. Chang, H. M. Weng, and J. C. Chiang, "Two-dimensional
electron gas in -doped double quantum wells for photodetector
application," J. Appl. Phys., vol. 81, no. 12, pp. 8112-8114, Jun. 1997.
[18] E. F Schubert, J. E. Cunningham, W.T Tsang and G.L. Timp,
"Selectively -doped AlxGa1-xAs/GaAs heterostructures with high twodimensional
electron-gas concentrations n2DEG>1.5x1012 cm-2 for fieldeffect
transistors, "Appl. Phys. Lett., vol. 51, no. 15, pp. 1170-1172 Oct.
1987
[19] E. F Schubert, A. Fischer and K. Ploog, "The delta doped field effect
transistor (FET), "IEEE Trans. Electron Devices, vol. 33, no. 5, pp.
625-632 May 1986.
[20] E. F Schubert, J. E. Cunningham, W.T Tsang, "Electron-mobility
enhancement and electron-concentration enhancement in -doped n-
GaAs at T=300K, " Solid State Commun., vol. 63, pp. 591-594, 1987
[21] E. F Schubert, J. E. Cunningham, and W.T Tsang, "Self-aligned
enhancement-mode and depletion-mode GaAs field effect transistor
employing the -doping technique," Appl. Phys. Lett., 49, no. 25, pp.
1729-1731, Dec. 1986.
[22] E. F Schubert, A. Fischer, Y. Horikoshi, and K. Ploog, "GaAs sawtooth
superlattice laser emitting at wavelength λ>0.9┬Ám," Appl. Phys. Lett.,
vol. 47, no. 3, pp. 219-221, Aug. 1985.
[23] H.J Gossmann and E.F. Schubert, "Delta doping in Silicone," Solid State
& Material Sc., vol. 18, no. 1, pp. 1-67, Jan. 1993.
[24] J. E. Cunningham, W.T. Tsang, G. Timp, E. F. Schubert, A. M. Chang
and K. Owusu-Sekyer, " Quantum size effects in monolayer doped
heterostructures," Phys. Rev. B, vol. 37,no. 8, pp. 4317-4320, Mar. 1988.
[25] T. Y Kuo, J. E Cunningham, E. F Schubert, W. T Tsang, T. H Chiu, R
Ren and C. G Fonstad, " Selectively -doped quantum well transistor
grown by gas source molecular beam epitaxy," J. Appl. Phys., vol. 64,
no. 6, pp. 3324- 3327, Sept. 1988.
[26] V.M.S.Gomes,A.S. Chavas, J. R Leite and J.M.Worlock,"Self-consistent
calculations of the two-dimensional electron density in modulationdoped
superlattices," Phys. Rev. B, 35 (8), pp. 3984-3989, Mar. 1978.
[27] S. K. Sarkar,P. K. Ghosh and D. Chattopadhyay, "Calculations of highfrequency
response of two-dimensional hot electrons in GaAs quantum
wells," J. Appl. Phys., vol. 78, no. 1, pp. 283-287, July 1995.
[28] S. K. Sarkar, "Multiple level optimization for high frequency ac mobility
in GaAs quantum wells under hot-electron condition," Comp. Mat. Sci.,
vol-29, pp. 243-249, 2004.
[29] S. K. Sarkar, A. Moi , C. Puttamadappa , A.K. Day and M.K. Naskar,
"Application of genetic algorithm to determine the optimized system
parameters of GaAs quantum wells for better high-frequency
performance under hot electron condition," Physica B, vol. 325, pp.189-
194, 2003.
[30] J. P. Leburton, "Size effects on polar optical phonon scattering of 1-D
and 2-D electron gas in synthetic
[1] "Technology roadmap for nanoelectronics," Published by European
Commission IST programme on Future and Emerging Technologies,
Nov. 2000. Available: http://www.cordis.lu/ist/fetnid.htm.
[2] R. Dingle, H. L. Stormer, A. C. Gossard and W. Wiegmann, "Electron
mobilities in modulation-doped semiconductor heterojunction
superlattices," Appl. Phys. Lett., vol. 33, no. 7, pp. 665-667, Oct. 1978.
[3] J. J. Harris, J A Pals and R Woltjer, "Electronic transport in lowdimensional
structures," Rep. Prog. Phys., vol. 52, pp.1217-1266, Oct.
1989.
[4] C T Foxon, J J Harris, D Hilton, J Hewett and C Roberts, "Optimisation
of (Al,Ga)As/GaAs two-dimensional electron gas structures for low
carrier densities & ultra high mobilities at low temperature, "Semicond.
Sci. Technol., vol. 4, pp. 582-595, Apr. 1989.
[5] M. Heiblum, E. E. Mendez and F. Stern, "High mobility electron gas in
selectively doped n:AlGaAs/GaAs heterojunctions," Appl. Phys. Lett.,
vol. 44, no.11, pp. 1064-1066, Jun. 1984
[6] E. F. Schubert, "Delta doping of III-V compound semiconductor:
Fundamental and device applications, "J. Vac. Sci. Technol. A, vol. 87,
no. 3, pp. 2980-2996, May 1990
[7] Guo-Qiang Hai, Nelson Studart and F. M. Peeters, "Electron mobility in
two coupled layers, " Phys. Rev. B, vol. 52, no. 15, pp.11273-11276,
Oct. 1995
[8] P. J. Price, "Two-dimensional electron transport in semiconductor layers.
I. Phonon scattering," Ann. Phys., vol. 133, pp. 217-239, May. 1981.
[9] T. Tsuchiya and T Ando, "Electron-phonon interaction in GaAs/AlAs
superlattices," Phys. Rev. B, vol. 47, no. 12, pp. 7240-7252, Mar. 1993.
[10] T. Tsuchiya and T Ando, "Mobility enhancement in quantum wells by
electronic-state modulation," Phys. Rev. B, vol. 48, no. 7, pp. 4599-4603,
Aug. 1993
[11] Subir Kumar Sarkar, "Effects of wave function modulation on highfrequency
carrier transport in quantum wells under high biasing field,"
Indian J. Phys., vol. 78, no. 7, pp. 535-538, 2004.
[12] X. T Zhu, H. Goronkin, G. N. Maracas, R. Droopad and M. Stroscio, "
Electron mobility enhancement by confining optical phonons in
GaAs/AlAs multiple quantum wells," Appl. Phys. Lett., vol. 60, no. 17,
pp. 2141-2143, Apr. 1992.
[13] J. Pozela, V. Juciene , A. Namajunas and K. Pozela, "Electron mobility
and subband population tuning by a phonon wall inserted in a
semiconductor quantum well, "J. Appl. Phys., vol. 81, no. 4, pp. 1775-
1780, Feb. 1997.
[14] H. Harikawa, H. Sakaki and J. Yoshino, "Concentrations of electrons in
selectively doped GaAlAs/GaAs heterojunction and its dependence on
spacer layer thickness and gate electric field," Appl. Phys. Lett., vol. 45,
no. 3, pp. 253-255, Aug. 1984.
[15] L. Chico, W Laskolski, R Perez-Alvarez and F Garcia Moliner, "On the
theory of GaAs-based quantum wells with external -doping, J. Phys.:
Condens. Matters, vol. 5, pp.9069-9076 Aug. 1993.
[16] H.J Gossmann and E.F. Schubert, "Delta doping in Silicone," Solid
State and Material Sc., vol. 18, no. 1, pp. 1-67, Jan. 1993
[17] Ikai Lo, Y. C. Chang, H. M. Weng, and J. C. Chiang, "Two-dimensional
electron gas in -doped double quantum wells for photodetector
application," J. Appl. Phys., vol. 81, no. 12, pp. 8112-8114, Jun. 1997.
[18] E. F Schubert, J. E. Cunningham, W.T Tsang and G.L. Timp,
"Selectively -doped AlxGa1-xAs/GaAs heterostructures with high twodimensional
electron-gas concentrations n2DEG>1.5x1012 cm-2 for fieldeffect
transistors, "Appl. Phys. Lett., vol. 51, no. 15, pp. 1170-1172 Oct.
1987
[19] E. F Schubert, A. Fischer and K. Ploog, "The delta doped field effect
transistor (FET), "IEEE Trans. Electron Devices, vol. 33, no. 5, pp.
625-632 May 1986.
[20] E. F Schubert, J. E. Cunningham, W.T Tsang, "Electron-mobility
enhancement and electron-concentration enhancement in -doped n-
GaAs at T=300K, " Solid State Commun., vol. 63, pp. 591-594, 1987
[21] E. F Schubert, J. E. Cunningham, and W.T Tsang, "Self-aligned
enhancement-mode and depletion-mode GaAs field effect transistor
employing the -doping technique," Appl. Phys. Lett., 49, no. 25, pp.
1729-1731, Dec. 1986.
[22] E. F Schubert, A. Fischer, Y. Horikoshi, and K. Ploog, "GaAs sawtooth
superlattice laser emitting at wavelength λ>0.9┬Ám," Appl. Phys. Lett.,
vol. 47, no. 3, pp. 219-221, Aug. 1985.
[23] H.J Gossmann and E.F. Schubert, "Delta doping in Silicone," Solid State
& Material Sc., vol. 18, no. 1, pp. 1-67, Jan. 1993.
[24] J. E. Cunningham, W.T. Tsang, G. Timp, E. F. Schubert, A. M. Chang
and K. Owusu-Sekyer, " Quantum size effects in monolayer doped
heterostructures," Phys. Rev. B, vol. 37,no. 8, pp. 4317-4320, Mar. 1988.
[25] T. Y Kuo, J. E Cunningham, E. F Schubert, W. T Tsang, T. H Chiu, R
Ren and C. G Fonstad, " Selectively -doped quantum well transistor
grown by gas source molecular beam epitaxy," J. Appl. Phys., vol. 64,
no. 6, pp. 3324- 3327, Sept. 1988.
[26] V.M.S.Gomes,A.S. Chavas, J. R Leite and J.M.Worlock,"Self-consistent
calculations of the two-dimensional electron density in modulationdoped
superlattices," Phys. Rev. B, 35 (8), pp. 3984-3989, Mar. 1978.
[27] S. K. Sarkar,P. K. Ghosh and D. Chattopadhyay, "Calculations of highfrequency
response of two-dimensional hot electrons in GaAs quantum
wells," J. Appl. Phys., vol. 78, no. 1, pp. 283-287, July 1995.
[28] S. K. Sarkar, "Multiple level optimization for high frequency ac mobility
in GaAs quantum wells under hot-electron condition," Comp. Mat. Sci.,
vol-29, pp. 243-249, 2004.
[29] S. K. Sarkar, A. Moi , C. Puttamadappa , A.K. Day and M.K. Naskar,
"Application of genetic algorithm to determine the optimized system
parameters of GaAs quantum wells for better high-frequency
performance under hot electron condition," Physica B, vol. 325, pp.189-
194, 2003.
[30] J. P. Leburton, "Size effects on polar optical phonon scattering of 1-D
and 2-D electron gas in synthetic
@article{"International Journal of Electrical, Electronic and Communication Sciences:58337", author = "N. Basanta Singh and Sanjoy Deb and G. P Mishra and Subir Kumar Sarkar", title = "Effects of Double Delta Doping on Millimeter and Sub-millimeter Wave Response of Two-Dimensional Hot Electrons in GaAs Nanostructures", abstract = "Carrier mobility has become the most important
characteristic of high speed low dimensional devices. Due to
development of very fast switching semiconductor devices, speed of
computer and communication equipment has been increasing day by
day and will continue to do so in future. As the response of any
device depends on the carrier motion within the devices, extensive
studies of carrier mobility in the devices has been established
essential for the growth in the field of low dimensional devices.
Small-signal ac transport of degenerate two-dimensional hot
electrons in GaAs quantum wells is studied here incorporating
deformation potential acoustic, polar optic and ionized impurity
scattering in the framework of heated drifted Fermi-Dirac carrier
distribution. Delta doping is considered in the calculations to
investigate the effects of double delta doping on millimeter and submillimeter
wave response of two dimensional hot electrons in GaAs
nanostructures. The inclusion of delta doping is found to enhance
considerably the two dimensional electron density which in turn
improves the carrier mobility (both ac and dc) values in the GaAs
quantum wells thereby providing scope of getting higher speed
devices in future.", keywords = "Carrier mobility, Delta doping, Hot carriers,Quantum wells.", volume = "3", number = "4", pages = "838-8", }
