Abstract: A way of generating millimeter wave I/Q signal using inductive resonator matched poly-phase filter is suggested. Normally the poly-phase filter generates quite accurate I/Q phase and magnitude but the loss of the filter is considerable due to series connection of passive RC components. This loss term directly increases system noise figure when the poly-phase filter is used in RF Front-end. The proposed matching method eliminates above mentioned loss and in addition provides gain on the passive filter. The working algorithm is illustrated by mathematical analysis. The generated I/Q signal is used in implementing millimeter wave phase shifter for the 60 GHz communication system to verify its effectiveness. The circuit is fabricated in 90 nm TSMC RF CMOS process under 1.2 V supply voltage. The measurement results showed that the suggested method improved gain by 6.5 dB and noise by 2.3 dB. The summary of the proposed I/Q generation is compared with previous works.
Abstract: Continuous-time delta-sigma analog digital converter (ADC) for radio frequency identification (RFID) complementary metal oxide semiconductor (CMOS) biosensor has been reported. This delta-sigma ADC is suitable for digital conversion of biosensor signal because of small process variation, and variable input range. As the input range of continuous-time switched current delta-sigma ADC (Dynamic range : 50 dB) can be limited by using current reference, amplification of biosensor signal is unnecessary. The input range is switched to wide input range mode or narrow input range mode by command of current reference. When the narrow input range mode, the input range becomes ± 0.8 V. The measured power consumption is 5 mW and chip area is 0.31 mm^2 using 1.2 um standard CMOS process. Additionally, automatic input range detecting system is proposed because of RFID biosensor applications.
Abstract: This paper introduces an adiabatic register file based
on two-phase CPAL (Complementary Pass-Transistor Adiabatic
Logic circuits) with power-gating scheme, which can operate on a
single-phase power clock. A 32×32 single-phase adiabatic register file
with power-gating scheme has been implemented with TSMC 0.18μm
CMOS technology. All the circuits except for the storage cells employ
two-phase CPAL circuits, and the storage cell is based on the
conventional memory one. The two-phase non-overlap power-clock
generator with power-gating scheme is used to supply the proposed
adiabatic register file. Full-custom layouts are drawn. The energy and
functional simulations have been performed using the net-list
extracted from their layouts. Compared with the traditional static
CMOS register file, HSPICE simulations show that the proposed
adiabatic register file can work very well, and it attains about 73%
energy savings at 100 MHz.
Abstract: This paper describes a low-voltage and low-power
channel selection analog front end with continuous-time low pass
filters and highly linear programmable gain amplifier (PGA). The
filters were realized as balanced Gm-C biquadratic filters to achieve a
low current consumption. High linearity and a constant wide
bandwidth are achieved by using a new transconductance (Gm) cell.
The PGA has a voltage gain varying from 0 to 65dB, while
maintaining a constant bandwidth. A filter tuning circuit that requires
an accurate time base but no external components is presented.
With a 1-Vrms differential input and output, the filter achieves
-85dB THD and a 78dB signal-to-noise ratio. Both the filter and PGA
were implemented in a 0.18um 1P6M n-well CMOS process. They
consume 3.2mW from a 1.8V power supply and occupy an area of
0.19mm2.
Abstract: The designing of charge pump with high gain Op-
Amp is a challenging task for getting faithful response .Design of
high performance phase locked loop require ,a design of high
performance charge pump .We have designed a operational amplifier
for reducing the error caused by high speed glitch in a transistor and
mismatch currents . A separate Op-Amp has designed in 180 nm
CMOS technology by CADENCE VIRTUOSO tool. This paper
describes the design of high performance charge pump for GHz
CMOS PLL targeting orthogonal frequency division multiplexing
(OFDM) application. A high speed low power consumption Op-Amp
with more than 500 MHz bandwidth has designed for increasing the
speed of charge pump in Phase locked loop.
Abstract: A 2.4GHz (RF) down conversion Gilbert Cell mixer,
implemented in a 0.18-μm CMOS technology with a 1.8V supply, is
presented. Current bleeding (charge injection) technique has been
used to increase the conversion gain and the linearity of the mixer.
The proposed mixer provides 10.75 dB conversion gain ( C G ) with
14.3mw total power consumption. The IIP3 and 1-dB compression
point of the mixer are 8dbm and -4.6dbm respectively, at 300 MHz
IF frequencies. Comparing the current design against the
conventional mixer design, demonstrates better performance in the
conversion gain, linearity, noise figure and port-to-port isolation.
Abstract: Adjacent Hall microsensors, comprising a silicon
substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage
related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in
the micro scale which is also compared to a single Hall plate.
Abstract: The paper proposes the novel design of a 3T XOR gate combining complementary CMOS with pass transistor logic. The design has been compared with earlier proposed 4T and 6T XOR gates and a significant improvement in silicon area and power-delay product has been obtained. An eight transistor full adder has been designed using the proposed three-transistor XOR gate and its performance has been investigated using 0.15um and 0.35um technologies. Compared to the earlier designed 10 transistor full adder, the proposed adder shows a significant improvement in silicon area and power delay product. The whole simulation has been carried out using HSPICE.
Abstract: This paper presented a proposed design for
transcutaneous inductive powering links. The design used to transfer
power and data to the implanted devices such as implanted
Microsystems to stimulate and monitoring the nerves and muscles.
The system operated with low band frequency 13.56 MHZ according
to industrial- scientific – medical (ISM) band to avoid the tissue
heating. For external part, the modulation index is 13 % and the
modulation rate 7.3% with data rate 1 Mbit/s assuming Tbit=1us. The
system has been designed using 0.35-μm fabricated CMOS
technology. The mathematical model is given and the design is
simulated using OrCAD P Spice 16.2 software tool and for real-time
simulation the electronic workbench MULISIM 11 has been used.
The novel circular plane (pancake) coils was simulated using
ANSOFT- HFss software.
Abstract: This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.
Abstract: A design flow of multi-standard down-conversion
CMOS mixers for three modern standards: Global System Mobile,
Digital Enhanced Cordless Telephone and Universal Mobile
Telecommunication Systems is presented. Three active mixer-s
structures are studied. The first is based on the Gilbert cell which
gives a tolerable noise figure and linearity with a low conversion
gain. The second and third structures use the current bleeding and
charge injection techniques in order to increase the conversion gain.
An improvement of about 2 dB of the conversion gain is achieved
without a considerable degradation of the other characteristics. The
models used for noise figure, conversion gain and IIP3 used are
studied. This study describes the nature of trade-offs inherent in such
structures and gives insights that help in identifying which structure
is better for given conditions.
Abstract: This paper proposes a low power SRAM based on
five transistor SRAM cell. Proposed SRAM uses novel word-line
decoding such that, during read/write operation, only selected cell
connected to bit-line whereas, in conventional SRAM (CV-SRAM),
all cells in selected row connected to their bit-lines, which in turn
develops differential voltages across all bit-lines, and this makes
energy consumption on unselected bit-lines. In proposed SRAM
memory array divided into two halves and this causes data-line
capacitance to reduce. Also proposed SRAM uses one bit-line and
thus has lower bit-line leakage compared to CV-SRAM.
Furthermore, the proposed SRAM incurs no area overhead, and has
comparable read/write performance versus the CV-SRAM.
Simulation results in standard 0.25μm CMOS technology shows in
worst case proposed SRAM has 80% smaller dynamic energy
consumption in each cycle compared to CV-SRAM. Besides, energy
consumption in each cycle of proposed SRAM and CV-SRAM
investigated analytically, the results of which are in good agreement
with the simulation results.
Abstract: In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented.
Abstract: Quality of 2D and 3D cross-sectional images produce
by Computed Tomography primarily depend upon the degree of
precision of primary and secondary X-Ray intensity detection.
Traditional method of primary intensity detection is apt to errors.
Recently the X-Ray intensity measurement system along with smart
X-Ray sensors is developed by our group which is able to detect
primary X-Ray intensity unerringly. In this study a new smart X-Ray
sensor is developed using Light-to-Frequency converter TSL230
from Texas Instruments which has numerous advantages in terms of
noiseless data acquisition and transmission. TSL230 construction is
based on a silicon photodiode which converts incoming X-Ray
radiation into the proportional current signal. A current to frequency
converter is attached to this photodiode on a single monolithic CMOS
integrated circuit which provides proportional frequency count to
incoming current signal in the form of the pulse train. The frequency
count is delivered to the center of PICDEM FS USB board with
PIC18F4550 microcontroller mounted on it. With highly compact
electronic hardware, this Demo Board efficiently read the smart
sensor output data. The frequency output approaches overcome
nonlinear behavior of sensors with analog output thus un-attenuated
X-Ray intensities could be measured precisely and better
normalization could be acquired in order to attain high resolution.
Abstract: An efficient architecture for low jitter All Digital
Phase Locked Loop (ADPLL) suitable for high speed SoC
applications is presented in this paper. The ADPLL is designed using
standard cells and described by Hardware Description Language
(HDL). The ADPLL implemented in a 90 nm CMOS process can
operate from 10 to 200 MHz and achieve worst case frequency
acquisition in 14 reference clock cycles. The simulation result shows
that PLL has cycle to cycle jitter of 164 ps and period jitter of 100 ps
at 100MHz. Since the digitally controlled oscillator (DCO) can
achieve both high resolution and wide frequency range, it can meet
the demands of system-level integration. The proposed ADPLL can
easily be ported to different processes in a short time. Thus, it can
reduce the design time and design complexity of the ADPLL, making
it very suitable for System-on-Chip (SoC) applications.
Abstract: In this paper, we consider the problem of logic simplification for a special class of logic functions, namely complementary Boolean functions (CBF), targeting low power implementation using static CMOS logic style. The functions are uniquely characterized by the presence of terms, where for a canonical binary 2-tuple, D(mj) ∪ D(mk) = { } and therefore, we have | D(mj) ∪ D(mk) | = 0 [19]. Similarly, D(Mj) ∪ D(Mk) = { } and hence | D(Mj) ∪ D(Mk) | = 0. Here, 'mk' and 'Mk' represent a minterm and maxterm respectively. We compare the circuits minimized with our proposed method with those corresponding to factored Reed-Muller (f-RM) form, factored Pseudo Kronecker Reed-Muller (f-PKRM) form, and factored Generalized Reed-Muller (f-GRM) form. We have opted for algebraic factorization of the Reed-Muller (RM) form and its different variants, using the factorization rules of [1], as it is simple and requires much less CPU execution time compared to Boolean factorization operations. This technique has enabled us to greatly reduce the literal count as well as the gate count needed for such RM realizations, which are generally prone to consuming more cells and subsequently more power consumption. However, this leads to a drawback in terms of the design-for-test attribute associated with the various RM forms. Though we still preserve the definition of those forms viz. realizing such functionality with only select types of logic gates (AND gate and XOR gate), the structural integrity of the logic levels is not preserved. This would consequently alter the testability properties of such circuits i.e. it may increase/decrease/maintain the same number of test input vectors needed for their exhaustive testability, subsequently affecting their generalized test vector computation. We do not consider the issue of design-for-testability here, but, instead focus on the power consumption of the final logic implementation, after realization with a conventional CMOS process technology (0.35 micron TSMC process). The quality of the resulting circuits evaluated on the basis of an established cost metric viz., power consumption, demonstrate average savings by 26.79% for the samples considered in this work, besides reduction in number of gates and input literals by 39.66% and 12.98% respectively, in comparison with other factored RM forms.
Abstract: Versatile dual-mode class-AB CMOS four-quadrant
analog multiplier circuit is presented. The dual translinear loops and
current mirrors are the basic building blocks in realization scheme.
This technique provides; wide dynamic range, wide-bandwidth response
and low power consumption. The major advantages of this
approach are; its has single ended inputs; since its input is dual translinear
loop operate in class-AB mode which make this multiplier
configuration interesting for low-power applications; current multiplying,
voltage multiplying, or current and voltage multiplying can
be obtainable with balanced input. The simulation results of versatile
analog multiplier demonstrate a linearity error of 1.2 %, a -3dB bandwidth
of about 19MHz, a maximum power consumption of 0.46mW,
and temperature compensated. Operation of versatile analog multiplier
was also confirmed through an experiment using CMOS transistor
array.
Abstract: This paper proposes a low-cost reconfigurable
architecture for AES algorithm. The proposed architecture separates
SubBytes and MixColumns into two parallel data path, and supports
different bit-width operation for this two data path. As a result, different number of S-box can be supported in this architecture. The
throughput and power consumption can be adjusted by changing the
number of S-box running in this design. Using the TSMC 0.18μm CMOS standard cell library, a very low-cost implementation of 7K
Gates is obtained under 182MHz frequency. The maximum throughput is 360Mbps while using 4 S-Box simultaneously, and the
minimum throughput is 114Mbps while only using 1 S-Box
Abstract: A high-frequency low-power sinusoidal quadrature
oscillator is presented through the use of two 2nd-order low-pass
current-mirror (CM)-based filters, a 1st-order CM low-pass filter and
a CM bilinear transfer function. The technique is relatively simple
based on (i) inherent time constants of current mirrors, i.e. the
internal capacitances and the transconductance of a diode-connected
NMOS, (ii) a simple negative resistance RN formed by a resistor load
RL of a current mirror. Neither external capacitances nor inductances
are required. As a particular example, a 1.9-GHz, 0.45-mW, 2-V
CMOS low-pass-filter-based all-current-mirror sinusoidal quadrature
oscillator is demonstrated. The oscillation frequency (f0) is 1.9 GHz
and is current-tunable over a range of 370 MHz or 21.6 %. The
power consumption is at approximately 0.45 mW. The amplitude
matching and the quadrature phase matching are better than 0.05 dB
and 0.15°, respectively. Total harmonic distortions (THD) are less
than 0.3 %. At 2 MHz offset from the 1.9 GHz, the carrier to noise
ratio (CNR) is 90.01 dBc/Hz whilst the figure of merit called a
normalized carrier-to-noise ratio (CNRnorm) is 153.03 dBc/Hz. The
ratio of the oscillation frequency (f0) to the unity-gain frequency (fT)
of a transistor is 0.25. Comparisons to other approaches are also
included.
Abstract: In this paper, a modified CCCII is presented. We have used a current mirror with low supply voltage. This circuit is operated at low supply voltage of ±1V. Tspice simulations for TSMC 0.18μm CMOS Technology has shown that the current and voltage bandwidth are respectively 3.34GHz and 4.37GHz, and parasitic resistance at port X has a value of 169.320 for a control current of 120μA. In order to realize this circuit, we have implemented in this first step a universal current mode filter where the frequency can reach the 134.58MHz. In the second step, we have implemented two simulated inductors: one floating and the other grounded. These two inductors are operated in high frequency and variable depending on bias current I0. Finally, we have used the two last inductors respectively to implement two sinusoidal oscillators domains of frequencies respectively: [470MHz, 692MHz], and [358MHz, 572MHz] for bias currents I0 [80μA, 350μA].