Abstract: While the use of cast-in-place concrete for an airfield and highway pavement overlay is very common, the application of precast concrete elements is very limited today. The main reasons consist of high production costs and complex structural behavior. Despite that, several precast concrete systems have been developed and tested with the aim to provide a system with rapid construction. The contribution deals with the reinforcement design of a hexagonal element developed for a proposed airfield pavement system. The sub-base course of the system is composed of compacted recycled concrete aggregates and fiber reinforced concrete with recycled aggregates place on top of it. The selected element belongs to a group of precast concrete elements which are being considered for the construction of a surface course. Both high costs of full-scale experiments and the need to investigate various elements force to simulate their behavior in a numerical analysis software by using finite element method instead of performing expensive experiments. The simulation of the selected element was conducted on a nonlinear model in order to obtain such results which could fully compensate results from experiments. The main objective was to design reinforcement of the precast concrete element subject to quasi-static loading from airplanes with respect to geometrical imperfections, manufacturing imperfections, tensile stress in reinforcement, compressive stress in concrete and crack width. The obtained findings demonstrate that the position and the presence of imperfection in a pavement highly affect the stress distribution in the precast concrete element. The precast concrete element should be heavily reinforced to fulfill all the demands. Using under-reinforced concrete elements would lead to the formation of wide cracks and cracks permanently open.
Abstract: The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.
Abstract: An algorithm is proposed for the order reduction of large scale linear dynamic multi variable systems where the reduced order model denominator is obtained by using Stability equation method and numerator coefficients are obtained by using SRAM. The proposed algorithm produces a lower order model for an original stable high order multivariable system. The reduction procedure is easy to understand, efficient and computer oriented. To highlight the advantages of the approach, the algorithm is illustrated with the help of a numerical example and the results are compared with the other existing techniques in literature.
Abstract: On-chip memories consume a significant portion of the overall die space and power in modern microprocessors. On-chip caches depend on Static Random-Access Memory (SRAM) cells and scaling of technology occurring as per Moore’s law. Unfortunately, the scaling is affecting stability, performance, and leakage power which will become major problems for future SRAMs in aggressive nanoscale technologies due to increasing device mismatch and variations. 3T1D Dynamic Random-Access Memory (DRAM) cell is a non-destructive read DRAM cell with three transistors and a gated diode. In 3T1D DRAM cell gated diode (D1) acts as a storage device and also as an amplifier, which leads to fast read access. Due to its high tolerance to process variation, high density, and low cost of memory as compared to 6T SRAM cell, it is universally used by the advanced microprocessor for on chip data and program memory. In the present paper, it has been shown that 3T1D DRAM cell can perform better in terms of fast read access as compared to 6T, 4T, 3T SRAM cells, respectively.
Abstract: This paper presents a method of hardening the 8051
micro-controller, able to assure reliable operation in the presence of
bit flips caused by radiation. Aiming at avoiding such faults in the
8051 micro-controller, Hamming code protection was used in its
SRAM memory and registers. A VHDL code has been used for this
hamming code protection.
Abstract: CNFET has emerged as an alternative material to
silicon for high performance, high stability and low power SRAM
design in recent years. SRAM functions as cache memory in
computers and many portable devices. In this paper, a new SRAM
cell design based on CNFET technology is proposed. The proposed
SRAM cell design for CNFET is compared with SRAM cell designs
implemented with the conventional CMOS and FinFET in terms of
speed, power consumption, stability, and leakage current. The
HSPICE simulation and analysis show that the dynamic power
consumption of the proposed 8T CNFET SRAM cell’s is reduced
about 48% and the SNM is widened up to 56% compared to the
conventional CMOS SRAM structure at the expense of 2% leakage
power and 3% write delay increase.
Abstract: Speed, power consumption and area, are some of the most important factors of concern in modern day memory design. As we move towards Deep Sub-Micron Technologies, the problems of leakage current, noise and cell stability due to physical parameter variation becomes more pronounced. In this paper we have designed an 8T Read Decoupled Dual Port SRAM Cell with Dual Threshold Voltage and characterized it in terms of read and write delay, read and write noise margins, Data Retention Voltage and Leakage Current. Read Decoupling improves the Read Noise Margin and static power dissipation is reduced by using Dual-Vt transistors. The results obtained are compared with existing 6T, 8T, 9T SRAM Cells, which shows the superiority of the proposed design. The Cell is designed and simulated in TSPICE using 90nm CMOS process.
Abstract: Power dissipation due to leakage current in the digital circuits is a biggest factor which is considered specially while designing nanoscale circuits. This paper is exploring the ideas of reducing leakage current in static CMOS circuits by stacking the transistors in increasing numbers. Clearly it means that the stacking of OFF transistors in large numbers result a significant reduction in power dissipation. Increase in source voltage of NMOS transistor minimizes the leakage current. Thus stacking technique makes circuit with minimum power dissipation losses due to leakage current. Also some of digital circuits such as full adder, D flip flop and 6T SRAM have been simulated in this paper, with the application of reduction technique on ‘cadence virtuoso tool’ using specter at 45nm technology with supply voltage 0.7V.
Abstract: To help overcome limits to the density of conventional SRAMs and leakage current of SRAM cell in nanoscaled CMOS technology, we have developed a four-transistor SRAM cell. The newly developed CMOS four-transistor SRAM cell uses one word-line and one bit-line during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 19% smaller than a conventional six-transistor cell using same design rules. Also the leakage current of new cell is 60% smaller than a conventional sixtransistor SRAM cell. Simulation result in 65nm CMOS technology shows new cell has correct operation during read/write operation and idle mode.
Abstract: This work aims to reduce the read power consumption
as well as to enhance the stability of the SRAM cell during the read
operation. A new 10-transisor cell is proposed with a new read
scheme to minimize the power consumption within the memory core.
It has separate read and write ports, thus cell read stability is
significantly improved. A 16Kb SRAM macro operating at 1V
supply voltage is demonstrated in 65 nm CMOS process. Its read
power consumption is reduced to 24% of the conventional design.
The new cell also has lower leakage current due to its special bit-line
pre-charge scheme. As a result, it is suitable for low-power mobile
applications where power supply is restricted by the battery.
Abstract: This paper proposes, for the first time, how the
challenges facing the guard-band designs including the margin
assist-circuits scheme for the screening-test in the coming process
generations should be addressed. The increased screening error
impacts are discussed based on the proposed statistical analysis
models. It has been shown that the yield-loss caused by the
misjudgment on the screening test would become 5-orders of
magnitude larger than that for the conventional one when the
amplitude of random telegraph noise (RTN) caused variations
approaches to that of random dopant fluctuation. Three fitting methods
to approximate the RTN caused complex Gamma mixtures
distributions by the simple Gaussian mixtures model (GMM) are
proposed and compared. It has been verified that the proposed
methods can reduce the error of the fail-bit predictions by 4-orders of
magnitude.
Abstract: The energy consumption and delay in read/write
operation of conventional SRAM is investigated analytically as well
as by simulation. Explicit analytical expressions for the energy
consumption and delay in read and write operation as a function of
device parameters and supply voltage are derived. The expressions are
useful in predicting the effect of parameter changes on the energy
consumption and speed as well as in optimizing the design of
conventional SRAM. HSPICE simulation in standard 0.25μm CMOS
technology confirms precision of analytical expressions derived from
this paper.
Abstract: An embedded system for SEU(single event upset) test
needs to be designed to prevent system failure by high-energy particles
during measuring SEU. SEU is a phenomenon in which the data is changed temporary in semiconductor device caused by high-energy particles. In this paper, we present an embedded system for
SRAM(static random access memory) SEU test. SRAMs are on the DUT(device under test) and it is separated from control board which
manages the DUT and measures the occurrence of SEU. It needs to
have considerations for preventing system failure while managing the
DUT and making an accurate measurement of SEUs. We measure the occurrence of SEUs from five different SRAMs at three different
cyclotron beam energies 30, 35, and 40MeV. The number of SEUs of SRAMs ranges from 3.75 to 261.00 in average.
Abstract: This paper presents a novel CMOS four-transistor
SRAM cell for very high density and low power embedded SRAM
applications as well as for stand-alone SRAM applications. This cell
retains its data with leakage current and positive feedback without
refresh cycle. The new cell size is 20% smaller than a conventional
six-transistor cell using same design rules. Also proposed cell uses
two word-lines and one pair bit-line. Read operation perform from
one side of cell, and write operation perform from another side of
cell, and swing voltage reduced on word-lines thus dynamic power
during read/write operation reduced. The fabrication process is fully
compatible with high-performance CMOS logic technologies,
because there is no need to integrate a poly-Si resistor or a TFT load.
HSPICE simulation in standard 0.25μm CMOS technology confirms
all results obtained from this paper.
Abstract: The paper is intended to declare and apply ethics, i. e.
moral principles, rules in marketing environment. Ethical behavior of
selected pharmaceutical companies in the Slovak Republic is the
object of our research. The aim of our research is to determine
perception of ethical behavior of the pharmaceutical industry in
Slovakia by the medicine representatives in comparison with the
assessment of doctors and patients. The experimental sample
included 90 participants who were divided into three groups:
medicine representatives of the pharmaceutical companies (N=30),
doctors (N=30) and patients (N=30). The research method was a
Questionnaire of ethical behavior, created by us, that describes
individual areas included in the Code of ethics of the pharmaceutical
industry in Slovakia. The results showed influence of professional
status on ethical behavior perception, not gender. Higher perception
was indicated at patients rather than doctors and medicine
representatives.
Abstract: The contribution deals with analysis of identity style
at adolescents (N=463) at the age from 16 to 19 (the average age is
17,7 years). We used the Identity Style Inventory by Berzonsky,
distinguishing three basic, measured identity styles: informational,
normative, diffuse-avoidant identity style and also commitment. The
informational identity style influencing on personal adaptability,
coping strategies, quality of life and the normative identity style, it
means the style in which an individual takes on models of authorities
at self-defining were found to have the highest representation in the
studied group of adolescents by higher scores at girls in comparison
with boys. The normative identity style positively correlates with the
informational identity style. The diffuse-avoidant identity style was
found to be positively associated with maladaptive decisional
strategies, neuroticism and depressive reactions. There is the style,
in which the individual shifts aside defining his personality. In our
research sample the lowest score represents it and negatively
correlates with commitment, it means with coping strategies, thrust in
oneself and the surrounding world. The age of adolescents did not
significantly differentiate representation of identity style. We were
finding the model, in which informational and normative identity
style had positive relationship and the informational and diffuseavoidant
style had negative relationship, which were determinated
with commitment. In the same time the commitment is influenced
with other outside factors.
Abstract: The most widely used semiconductor memory types
are the Dynamic Random Access Memory (DRAM) and Static
Random Access memory (SRAM). Competition among memory
manufacturers drives the need to decrease power consumption and
reduce the probability of read failure. A technology that is relatively
new and has not been explored is the FinFET technology. In this
paper, a single cell Schmitt Trigger Based Static RAM using FinFET
technology is proposed and analyzed. The accuracy of the result is
validated by means of HSPICE simulations with 32nm FinFET
technology and the results are then compared with 6T SRAM using
the same technology.
Abstract: We presented results of research aimed on findings
influence of social - psychological training (realized with students of
Constantine the Philosopher University- future teachers within their
undergraduate preparation) on the choice of intrapersonal and
interpersonal features. After social- psychological training using
Interpersonal Check List (ICL) we found out shift of behavior to
more adaptive forms in categories, which are characterized by
extroversive friendly behavior, willingness to cooperation,
conformity regard to social situation, responsible and regardful
behavior.
Using State-Trait Anxiety Inventory (STAI) we found out the cut
down of state anxiety and of trait anxiety. The report was processed
within grants KEGA 3/5269/07 and VEGA 1/3675/06.
Abstract: This paper proposes a low power SRAM based on
five transistor SRAM cell. Proposed SRAM uses novel word-line
decoding such that, during read/write operation, only selected cell
connected to bit-line whereas, in conventional SRAM (CV-SRAM),
all cells in selected row connected to their bit-lines, which in turn
develops differential voltages across all bit-lines, and this makes
energy consumption on unselected bit-lines. In proposed SRAM
memory array divided into two halves and this causes data-line
capacitance to reduce. Also proposed SRAM uses one bit-line and
thus has lower bit-line leakage compared to CV-SRAM.
Furthermore, the proposed SRAM incurs no area overhead, and has
comparable read/write performance versus the CV-SRAM.
Simulation results in standard 0.25μm CMOS technology shows in
worst case proposed SRAM has 80% smaller dynamic energy
consumption in each cycle compared to CV-SRAM. Besides, energy
consumption in each cycle of proposed SRAM and CV-SRAM
investigated analytically, the results of which are in good agreement
with the simulation results.